Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
101 words
A method of fabricating an epidermal abrasion device, said method comprising the steps of: providing a semiconductor substrate with a planar surface: defining a mask configuration on said semiconductor substrate to facilitate the formation of an epidermal abrasion device; and exposing said mask configuration on said semiconductor substrate to an isotropic etchant, said isotropic etchant forming a matrix of isotropically etched structures on said semiconductor substrate adapted for epidermal abrasion, said isotropically etched structures having isotropically etched sidewalls positioned between wide bases and narrow tips; wherein said exposing step includes forming a matrix of isotropically etched pyramids on said semiconductor substrate.
Claim 2
Independent Claim
101 words
A method of fabricating an epidermal abrasion device, said method comprising the steps of: providing a semiconductor substrate with a planar surface: defining a mask configuration on said semiconductor substrate to facilitate the formation of an epidermal abrasion device; and exposing said mask configuration on said semiconductor substrate to an isotropic etchant, said isotropic etchant forming a matrix of isotropically etched structures on said semiconductor substrate adapted for epidermal abrasion, said isotropically etched structures having isotropically etched sidewalls positioned between wide bases and narrow tips; wherein said exposing step includes forming a matrix of isotropically etched pyramids on said semiconductor substrate.
Claim 3
Dependent Claim
29 words
The method of claim 1 further comprising the step of using a phosphosilicate glass layer to facilitate formation of said matrix of isotropically etched pyramids on said semiconductor substrate.
Claim 4
Dependent Claim
20 words
The method of claim 1 wherein each said structure has a vertical height of between 20 μm and 350 μm.
Claim 5
Dependent Claim
30 words
The method of claim 1 wherein horizontal spacing between tops of adjacent ones of said isotropically etched structures is greater than two times the vertical height of each adjacent structure.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein said providing step includes providing a silicon on-insulator (SOI) wafer as said semiconductor substrate.
Claim 7
Dependent Claim
17 words
The method of claim 1 wherein said exposing step is performed without the use of ethylenediamine pyrocatechol.
Claim 8
Dependent Claim
144 words
A method of fabricating an epidermal abrasion device, said method comprising the steps of: providing a semiconductor substrate with a planar surface; defining a mask configuration on said semiconductor substrate to facilitate the formation of an epidemial abrasion device; and exposing said mask configuration on said semiconductor substrate to an isotropic etchant, said isotropic etchant forming a matrix of isotropically etched structures on said semiconductor substrate adapted for epidermal abrasion, said isotropically etched structures having isotropically etched sidewalls positioned between wide bases and narrow tips; wherein said exposing step includes exposing said mask configuration on said semiconductor substrate to an isotropic etchant to form said matrix of isotropically etched structures in which each structure has a vertical height of at least 20 μm. 8 .The method of claim 7 wherein each said structure has a vertical height of between 20 μm and 350 μm.
Claim 9
Dependent Claim
30 words
The method of claim 8 wherein horizontal spacing between tops of adjacent ones of said isotropically etched structures is greater than two times the vertical height of each adjacent structure.
Claim 10
Dependent Claim
23 words
The method of claim 8 wherein said providing step includes the step of providing a silicon on-insulator (SOI) wafer as said semiconductor substrate.
Claim 11
Dependent Claim
17 words
The method of claim 8 wherein said exposing step is performed without the use of ethylenediamine pyrocatechol.