US6180988B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Self-aligned silicided MOSFETS with a graded S/D junction and gate-side air-gap structure
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1997-12-04
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Granted: 2001-01-30
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Expires: 2017-12-04
Abstract
Abstract A MOSFET includes a gate oxide formed on a substrate. A thin dielectric layer is formed on the side walls of the gate. A gate is formed on the gate oxide. A first metal silicide layer is formed on top of the gate to increase the conductivity of the gate. Spacers are formed on the substrate and are separated with the gate by a space. Air gaps are formed between the gate and the spacers. First doped ion regions are formed aligned to the air gaps in the substrate, under a portion of the dielectric layer. Second doped ion regions are formed under the spacers in the substrate, next to the first doped ion regions. Third doped ion regions are formed in the substrate next to the second doped ion regions. The third doped ion regions have relatively highly doped ions to the first doped ion regions. The second doped ion regions are formed with immediately highly doped ions between the first and the third doped ion regions.
Inventors
- 👤 Shye-Lin Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 06:40
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0212; H10D30/0223; H10D30/0227; H10D30/60; H10D30/601; H10D64/00; H10D64/60; H10D64/66; H10D64/671; H10D64/675; H10D64/679; H10P30/21; H10P30/212; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
190 words
A transistor with gate-side air gaps (GASs) formed on a semiconductor substrate, said transistor comprising: a gate oxide formed on said substrate; a gate formed on said gate oxide; an oxynitride layer formed on the side walls of said gate; spacers formed on said substrate and separated with said gate with a space, air gaps being formed between said gate and said spacers, a portion of said oxynitride layer being formed at a bottom of said air gaps, wherein said oxynitride layer is used to recover the etching damage generated by patterning of said gate; first doped ion regions formed aligned to said air gaps in said substrate, and under said portion of said oxynitride layer; second doped ion regions formed under said spacers in said substrate, and next to said first doped ion regions; and third doped ion regions formed in said substrate, and next to said second doped ion regions, said third doped ion regions having relatively highly doped ions to said first doped ion regions, said second doped ion regions having immediately highly doped ions between said first doped ion regions and said third doped ion regions.
Claim 2
Dependent Claim
190 words
A transistor with gate-side air gaps (GASs) formed on a semiconductor substrate, said transistor comprising: a gate oxide formed on said substrate; a gate formed on said gate oxide; an oxynitride layer formed on the side walls of said gate; spacers formed on said substrate and separated with said gate with a space, air gaps being formed between said gate and said spacers, a portion of said oxynitride layer being formed at a bottom of said air gaps, wherein said oxynitride layer is used to recover the etching damage generated by patterning of said gate; first doped ion regions formed aligned to said air gaps in said substrate, and under said portion of said oxynitride layer; second doped ion regions formed under said spacers in said substrate, and next to said first doped ion regions; and third doped ion regions formed in said substrate, and next to said second doped ion regions, said third doped ion regions having relatively highly doped ions to said first doped ion regions, said second doped ion regions having immediately highly doped ions between said first doped ion regions and said third doped ion regions.
Claim 3
Dependent Claim
49 words
The transistor of claim 1 , further comprising: a first metal silicide layer formed on top of said gate to increase the conductivity of said gate; and a second metal silicide layer formed on said third doped ion regions to increase the conductivity of said third doped ion regions.
Claim 4
Dependent Claim
23 words
The transistor method of claim 1 , wherein said first doped ion regions have a concentration about 5E17 to 5E20 atoms/cm 3 .
Claim 5
Dependent Claim
20 words
The transistor of claim 1 , wherein said second doped ion regions have a concentration about 1E20 atoms/cm 3 .
Claim 6
Dependent Claim
22 words
The transistor of claim 1 , wherein said third doped ion regions have a concentration about 1E20 to 5E21 atoms/cm 3 .
Claim 7
Dependent Claim
231 words
A transistor with gate-side air gaps (GASs) formed on a semiconductor substrate, said transistor comprising: a gate oxide formed on said substrate; a gate formed on said gate oxide; an oxynitride layer formed on the side walls of said gate; spacers formed on said substrate and separated with said gate with a space, air gaps being formed between said gate and said spacers, a portion of said [dielectric] oxynitride layer being formed at a bottom of said air gaps, wherein said oxynitride layer is used to recover the etching damage generated by patterning of said gate; first doped ion regions formed aligned to said air gaps in said substrate, and under said portion of said oxynitride layer; second doped ion regions formed under said spacers in said substrate, and next to said first doped ion regions; third doped ion regions formed in said substrate, and next to said second doped ion regions, said third doped ion regions having relatively highly doped ions to said first doped ion regions, said second doped ion regions having immediately highly doped ions between said first doped ion regions and said third doped ion regions; a first metal silicide layer formed on top of said gate to increase the conductivity of said gate; and a second metal suicide layer formed on said third doped ion regions to increase the conductivity of said third doped ion regions.
Claim 8
Dependent Claim
231 words
A transistor with gate-side air gaps (GASs) formed on a semiconductor substrate, said transistor comprising: a gate oxide formed on said substrate; a gate formed on said gate oxide; an oxynitride layer formed on the side walls of said gate; spacers formed on said substrate and separated with said gate with a space, air gaps being formed between said gate and said spacers, a portion of said [dielectric] oxynitride layer being formed at a bottom of said air gaps, wherein said oxynitride layer is used to recover the etching damage generated by patterning of said gate; first doped ion regions formed aligned to said air gaps in said substrate, and under said portion of said oxynitride layer; second doped ion regions formed under said spacers in said substrate, and next to said first doped ion regions; third doped ion regions formed in said substrate, and next to said second doped ion regions, said third doped ion regions having relatively highly doped ions to said first doped ion regions, said second doped ion regions having immediately highly doped ions between said first doped ion regions and said third doped ion regions; a first metal silicide layer formed on top of said gate to increase the conductivity of said gate; and a second metal suicide layer formed on said third doped ion regions to increase the conductivity of said third doped ion regions.
Claim 9
Dependent Claim
23 words
The transistor method of claim 6 , wherein said first doped ion regions have a concentration about 5E17 to 5E20 atoms/cm 3 .
Claim 10
Dependent Claim
20 words
The transistor of claim 6 , wherein said second doped ion regions have a concentration about 1E20 atoms/cm 3 .
Claim 11
Dependent Claim
22 words
The transistor of claim 6 , wherein said third doped ion regions have a concentration about 1E20 to 5E21 atoms/cm 3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-30 | 2004-07-31 | 2005-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-30 | 2008-07-31 | 2009-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-30 | 2012-07-31 | 2013-01-30 | $7700.00 | Window Closed / Lapsed |