US6174796B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device manufacturing method
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1998-12-30
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Granted: 2001-01-16
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Expires: 2018-12-30
Abstract
Abstract A semiconductor device manufacturing method having a copper wiring, comprises the steps of forming a second insulating film for covering the wiring on a first insulating film, forming a third insulating film which is made of material different from the second insulating film on the second insulating film, coating a resist on the third insulating film and then forming an opening over the wiring by exposing and developing the resist, forming a hole or groove in the third insulating film by etching the third insulating film via the opening, removing the resist by placing the semiconductor substrate in a plasma atmosphere containing oxygen in a chamber and simultaneously removing a part of the second insulating film via the hole or groove to expose the wiring via the hole or groove, and forming a metal film in the hole or groove.
Inventors
- 👤 Hideo Takagi
- 👤 Wataru Futo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:14
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/071; H10W20/081; H10W20/082
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
169 words
A semiconductor device manufacturing method comprising the steps of: forming a wiring on a first insulating film which is formed on a semiconductor substrate; forming a second insulating film for covering the wiring; forming a third insulating film, which is made of material different from the second insulating film, on the second insulating film; coating a resist on the third insulating film, and then forming an opening over the wiring by exposing and developing the resist; forming a hole or groove in the third insulating film by etching the third insulating film via the opening with a reactive ion etching method; removing the resist; forming an inclined surface by etching an upper edge portion of the third insulating film around the hole or groove to thus extend an upper portion of the hole or groove; after forming the inclined surface, removing a part of the second insulating film via the hole or groove by the reactive ion etching method; and forming a metal film in the hole or groove.
Claim 2
Dependent Claim
169 words
A semiconductor device manufacturing method comprising the steps of: forming a wiring on a first insulating film which is formed on a semiconductor substrate; forming a second insulating film for covering the wiring; forming a third insulating film, which is made of material different from the second insulating film, on the second insulating film; coating a resist on the third insulating film, and then forming an opening over the wiring by exposing and developing the resist; forming a hole or groove in the third insulating film by etching the third insulating film via the opening with a reactive ion etching method; removing the resist; forming an inclined surface by etching an upper edge portion of the third insulating film around the hole or groove to thus extend an upper portion of the hole or groove; after forming the inclined surface, removing a part of the second insulating film via the hole or groove by the reactive ion etching method; and forming a metal film in the hole or groove.
Claim 3
Dependent Claim
25 words
A semiconductor device manufacturing method according to claim 1 , wherein the inclined surface is formed by etching the third insulating film with argon sputtering.
Claim 4
Dependent Claim
41 words
A semiconductor device manufacturing method according to claim 1 , further comprising the step of removing an oxide from a surface of the wiring by heating the surface of the wiring via the hole or groove in a hydrogen containing atmosphere.
Claim 5
Dependent Claim
41 words
A semiconductor device manufacturing method according to claim 1 , further comprising the step of removing an oxide from a surface of the wiring by exposing the surface of the wiring to a hydrogen plasma atmosphere via the hole or groove.
Claim 6
Dependent Claim
40 words
A semiconductor device manufacturing method according to claim 1 , further comprising the step of removing an oxide from a surface of the wiring by etching the surface of the wiring via the hole or groove by using hydrogen fluoride.
Claim 7
Dependent Claim
19 words
A semiconductor device manufacturing method according to claim 1 , wherein the wiring is formed of copper or palladium.
Claim 8
Dependent Claim
35 words
A semiconductor device manufacturing method according to claim 1 , wherein the second insulating film is formed of a silicon nitride film, and the third insulating film is formed of a silicon oxide containing film.
Claim 9
Dependent Claim
47 words
A semiconductor device manufacturing method according to claim 1 , wherein the second insulating film is formed of low dielectric constant material which contains a silicon oxide or carbon, and the third insulating material is formed of low dielectric constant material which contains an organic group SOG.
Claim 10
Dependent Claim
146 words
A semiconductor device manufacturing method comprising the steps of: forming a wiring on a first insulating film which is formed on a semiconductor substrate; forming a second insulating film for covering the wiring; forming a third insulating film, which is made of material different from the second insulating film, on the second insulating film; coating a resist on the third insulating film, and then forming an opening over the wiring by exposing and developing the resist; forming a hole or groove in the third insulating film by etching the third insulating film via the opening; removing the resist by placing the semiconductor substrate in a plasma atmosphere containing oxygen in a chamber, and simultaneously removing a part of the second insulating film via the hole or groove to expose the wiring via the hole or groove; and forming a metal film in the hole or groove.
Claim 11
Dependent Claim
146 words
A semiconductor device manufacturing method comprising the steps of: forming a wiring on a first insulating film which is formed on a semiconductor substrate; forming a second insulating film for covering the wiring; forming a third insulating film, which is made of material different from the second insulating film, on the second insulating film; coating a resist on the third insulating film, and then forming an opening over the wiring by exposing and developing the resist; forming a hole or groove in the third insulating film by etching the third insulating film via the opening; removing the resist by placing the semiconductor substrate in a plasma atmosphere containing oxygen in a chamber, and simultaneously removing a part of the second insulating film via the hole or groove to expose the wiring via the hole or groove; and forming a metal film in the hole or groove.
Claim 12
Dependent Claim
20 words
A semiconductor device manufacturing method according to claim 9 , wherein an inert gas is supplied into the plasma atmosphere.
Claim 13
Dependent Claim
47 words
A semiconductor device manufacturing method according to claim 9 , wherein an inclined surface is formed by etching an upper edge of the third insulating film being exposed by removing the resist in the plasma atmosphere to thus extend an upper portion of the hole or groove.
Claim 14
Dependent Claim
23 words
A semiconductor device manufacturing method according to claim 9 , wherein an inner surface of the chamber is cleaned by the plasma atmosphere.
Claim 15
Dependent Claim
41 words
A semiconductor device manufacturing method according to claim 9 , further comprising the step of removing an oxide from a surface of the wiring by heating the surface of the wiring via the hole or groove in a hydrogen containing atmosphere.
Claim 16
Dependent Claim
41 words
A semiconductor device manufacturing method according to claim 9 , further comprising the step of removing an oxide from a surface of the wiring by exposing the surface of the wiring to a hydrogen plasma atmosphere via the hole or groove.
Claim 17
Dependent Claim
40 words
A semiconductor device manufacturing method according to claim 9 , further comprising the step of removing an oxide from a surface of the wiring by etching the surface of the wiring via the hole or groove by using hydrogen fluoride.
Claim 18
Dependent Claim
19 words
A semiconductor device manufacturing method according to claim 9 , wherein the wiring is formed of copper or palladium.
Claim 19
Dependent Claim
35 words
A semiconductor device manufacturing method according to claim 9 , wherein the second insulating film is formed of a silicon nitride film, and the third insulating film is formed of a silicon oxide containing film.
Claim 20
Dependent Claim
47 words
A semiconductor device manufacturing method according to claim 9 , wherein the second insulating film is formed of low dielectric constant material which contains a silicon oxide or carbon, and the third insulating material is formed of low dielectric constant material which contains an organic group SOG.
References Cited (Backward Citations)
US5420078A
Cited
US5968851A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-16 | 2004-07-17 | 2005-01-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-16 | 2008-07-17 | 2009-01-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-16 | 2012-07-17 | 2013-01-16 | $7700.00 | Window Closed / Lapsed |