US6174737B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Magnetic random access memory and fabricating method thereof
Assignee: Everspin Technologies Inc
•
Filing: 1999-06-24
•
Granted: 2001-01-16
•
Expires: 2019-06-24
Abstract
Abstract An improved and novel MRAM device with magnetic memory elements and circuitry for controlling magnetic memory elements is provided. The circuitry, for example, transistor ( 12 a ) having a gate ( 17 a ), a drain ( 18 ) and a source ( 16 a ) is integrated on a substrate ( 11 ) and coupled to a magnetic memory element ( 43 ) on the circuitry through a plug conductor ( 19 a ) and a conductor line ( 45 ). The circuitry is fabricated first under the CMOS process and then magnetic memory elements ( 43, 44 ). Digit line ( 29 ) and bit line ( 48 ) are placed under and on top of magnetic memory element ( 43 ), respectively, and enabled to access magnetic memory element ( 43 ). These lines are enclosed by a high permeability layer ( 31, 56, 58 ) excluding a surface facing magnetic memory element ( 43 ), which shields and focuses a magnetic field toward magnetic memory element ( 43 ).
Inventors
- 👤 Mark Durlam
- 👤 Gloria Kerszykowski
- 👤 Jon Slaughter
- 👤 Theodore Zhu
- 👤 Eugene Chen
- 👤 Saied N. Tehrani
- 👤 Kelly W. Kyler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:10
CPC Classifications
H; H10; H10B; H10B61/00; H10B61/20; H10B61/22; B; B82; B82Y; B82Y10/00; G; G11; G11C; G11C11/00; G11C11/02; G11C11/14; G11C11/15; H10B61/10
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
122 words
A method of fabricating a random access memory having a magnetic memory cell and circuitry for controlling operations of the magnetic memory cell, the method comprising the steps of: providing a substrate on which the magnetic memory cell and the circuitry are formed; forming the circuitry on the substrate comprising steps of: forming a current control element for controlling a sense current supplied to the magnetic memory cell, and forming a first electrically conductive line; forming the magnetic memory cell on the circuitry being electrically isolated from the first electrically conductive line; and forming a second electrically conductive line being electrically coupled to the magnetic memory cell and being perpendicularly placed to the first electrically conductive line on the magnetic memory cell.
Claim 2
Independent Claim
122 words
A method of fabricating a random access memory having a magnetic memory cell and circuitry for controlling operations of the magnetic memory cell, the method comprising the steps of: providing a substrate on which the magnetic memory cell and the circuitry are formed; forming the circuitry on the substrate comprising steps of: forming a current control element for controlling a sense current supplied to the magnetic memory cell, and forming a first electrically conductive line; forming the magnetic memory cell on the circuitry being electrically isolated from the first electrically conductive line; and forming a second electrically conductive line being electrically coupled to the magnetic memory cell and being perpendicularly placed to the first electrically conductive line on the magnetic memory cell.
Claim 3
Dependent Claim
87 words
The method of fabricating a random access memory as claimed in claim 1 wherein the step of forming the magnetic memory cell further includes steps of: depositing a bottom metal layer overlying the circuitry; polishing a surface of the bottom metal layer to level by a chemical mechanical polishing (CMP) process; depositing a first magnetic layer, a non-magnetic layer, and a second magnetic layer; patterning a mask for the magnetic memory cell; and etching first, non-magnetic, second, and bottom metal layers to produce the magnetic memory cell.
Claim 4
Dependent Claim
87 words
The method of fabricating a random access memory as claimed in claim 1 wherein the step of forming the first electrically conductive line further includes steps of: depositing a dielectric layer on the substrate; patterning a mask for the first electrically conductive line; etching the dielectric layer to form a trench for the first electrically conductive line; depositing a high permeability material; depositing an electrically conductive material on the high permeability material; and removing the high permeability material and the electrically conductive material on the dielectric layer.
Claim 5
Dependent Claim
87 words
The method of fabricating a random access memory as claimed in claim 1 wherein the step of forming the second electrically conductive line further includes steps of: depositing a dielectric layer overlying the magnetic memory cell; patterning a mask for the second electrically conductive line; etching the dielectric layer to a top surface of the magnetic memory cell to form a trench for the second electrically conductive line; depositing electrically conductive material in the trench; and depositing a high permeability material overlying the second electrically conductive line.
Claim 6
Dependent Claim
29 words
The method of fabricating a random access memory as claimed in claim 1 further including a step of coating a high permeability layer overlying the second electrically conductive line.
Claim 7
Dependent Claim
36 words
The method of fabricating a random access memory as claimed in claim 1 wherein the step of forming the circuitry further includes a step of forming the circuitry by a complimentary metal oxide semiconductor (CMOS) process.
Claim 8
Independent Claim
208 words
A method of fabricating a random access memory having a magnetic memory cell and circuitry for controlling operations of the magnetic memory cell, the method comprising the steps of: providing a substrate on which the magnetic memory cell and the circuitry are arranged; forming a first electrically conductive line comprising steps of; depositing a dielectric layer on the substrate; patterning a mask for the first electrically conductive line; etching the dielectric layer; depositing a high permeability material; depositing an electrically conductive material on the high permeability material; and polishing a top surface to flat and to remove the high permeability material and the electrically conductive material on the electrically conductive material; depositing a layer for a current control element overlying the first electrically conductive line; depositing a magnetic memory cell layer including a first magnetic layer, a non-magnetic layer, and a second magnetic layer; patterning a mask for the magnetic memory cell; and etching the magnetic memory cell layer and the layer for the current control element to produce the current control element and the magnetic memory cell; and forming a second electrically conductive line being electrically coupled to the magnetic memory cell and being perpendicularly placed to the first electrically conductive line on the magnetic memory cell.
Claim 9
Independent Claim
208 words
A method of fabricating a random access memory having a magnetic memory cell and circuitry for controlling operations of the magnetic memory cell, the method comprising the steps of: providing a substrate on which the magnetic memory cell and the circuitry are arranged; forming a first electrically conductive line comprising steps of; depositing a dielectric layer on the substrate; patterning a mask for the first electrically conductive line; etching the dielectric layer; depositing a high permeability material; depositing an electrically conductive material on the high permeability material; and polishing a top surface to flat and to remove the high permeability material and the electrically conductive material on the electrically conductive material; depositing a layer for a current control element overlying the first electrically conductive line; depositing a magnetic memory cell layer including a first magnetic layer, a non-magnetic layer, and a second magnetic layer; patterning a mask for the magnetic memory cell; and etching the magnetic memory cell layer and the layer for the current control element to produce the current control element and the magnetic memory cell; and forming a second electrically conductive line being electrically coupled to the magnetic memory cell and being perpendicularly placed to the first electrically conductive line on the magnetic memory cell.
References Cited (Backward Citations)
US5075247A
Cited
US5424236A
Cited
US5352622A
Cited
US5329486A
Cited
US5640343A
Cited
US5861328A
Cited
US5768181A
Cited
US6048739A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-16 | 2004-07-17 | 2005-01-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-16 | 2008-07-17 | 2009-01-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-16 | 2012-07-17 | 2013-01-16 | $7700.00 | Window Closed / Lapsed |