US6143669A
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Method of growing gate oxides
Assignee: SK Hynix Inc
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Filing: 1998-11-17
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Granted: 2000-11-07
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Expires: 2018-11-17
Abstract
Abstract A method for manufacturing a gate oxide film in a semiconductor device includes: preparing a semiconductor substrate having a first and a second active region; implanting germanium ions into the first active region; and forming a first and a second gate oxide films on the first and the second active regions, respectively, wherein the first gate oxide film is thicker than the second gate oxide film.
Inventors
- 👤 Won Ju Cho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:50
CPC Classifications
H; H10; H10P; H10P10/00; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0144; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
63 words
A method for manufacturing a gate oxide film comprising: preparing a semiconductor substrate having a first and a second active region; implanting germanium ions into the first active region; and forming a first and a second gate oxide film simultaneously on the first and the second active regions, respectively, wherein the first gate oxide film is thicker than the second gate oxide film.
Claim 2
Independent Claim
63 words
A method for manufacturing a gate oxide film comprising: preparing a semiconductor substrate having a first and a second active region; implanting germanium ions into the first active region; and forming a first and a second gate oxide film simultaneously on the first and the second active regions, respectively, wherein the first gate oxide film is thicker than the second gate oxide film.
Claim 3
Dependent Claim
32 words
The method according to claim 1, wherein the germanium ion implantation is conducted with an implant energy of 20-100 KeV and an implant dose of 5×10 14 -1×10 16 atoms/cm 2 .
Claim 4
Dependent Claim
19 words
The method according to claim 1, wherein the first and second gate oxide layers are formed by thermal oxidation.
Claim 5
Dependent Claim
18 words
The method according to claim 3, wherein the thermal oxidation is conducted at a temperature of 800-850° C.
Claim 6
Independent Claim
100 words
A method for manufacturing a gate oxide film comprising: preparing a semiconductor substrate having a first and a second active region; forming a masking layer on the second active region; implanting germanium ions into the semiconductor substrate, wherein the germanium ions are piled up into the surface of the semiconductor substrate in the first active region and into the masking layer in the second active region; and forming a first and a second gate oxide film simultaneously on the first and the second active regions, respectively, wherein the first gate oxide film is thicker than the second gate oxide film.
Claim 7
Independent Claim
100 words
A method for manufacturing a gate oxide film comprising: preparing a semiconductor substrate having a first and a second active region; forming a masking layer on the second active region; implanting germanium ions into the semiconductor substrate, wherein the germanium ions are piled up into the surface of the semiconductor substrate in the first active region and into the masking layer in the second active region; and forming a first and a second gate oxide film simultaneously on the first and the second active regions, respectively, wherein the first gate oxide film is thicker than the second gate oxide film.
Claim 8
Dependent Claim
14 words
The method according to claim 5, wherein the masking layer consists of silicon dioxide.
Claim 9
Dependent Claim
31 words
The method according to claim 5, wherein the germanium ion implantation is conducted with an implant energy of 20-100KeV and an implant dose of 5×10 14 -1×10 16 atoms/cm 2 .
Claim 10
Dependent Claim
19 words
The method according to claim 5, wherein the first and second gate oxide layers are formed by thermal oxidation.
Claim 11
Dependent Claim
18 words
The method according to claim 8, wherein the thermal oxidation is conducted at a temperature of 800-850° C.
Claim 12
Independent Claim
112 words
A method for manufacturing a gate oxide film, comprising: preparing a semiconductor substrate having a first and a second active region and an isolation region therebetween; forming an isolation film on the isolation region; forming a masking layer on the second active region; implanting germanium ions into the semiconductor substrate, wherein the germanium ions are piled up into the surface of the semiconductor substrate in the first active region and the masking layer in the second active region; and forming a first and a second gate oxide film simultaneously on the first and the second active regions respectively, wherein the first gate oxide film is thicker than the second gate oxide film.
Claim 13
Independent Claim
112 words
A method for manufacturing a gate oxide film, comprising: preparing a semiconductor substrate having a first and a second active region and an isolation region therebetween; forming an isolation film on the isolation region; forming a masking layer on the second active region; implanting germanium ions into the semiconductor substrate, wherein the germanium ions are piled up into the surface of the semiconductor substrate in the first active region and the masking layer in the second active region; and forming a first and a second gate oxide film simultaneously on the first and the second active regions respectively, wherein the first gate oxide film is thicker than the second gate oxide film.
Claim 14
Dependent Claim
15 words
The method according to claim 10, wherein the masking layer consists of a silicon dioxide.
Claim 15
Dependent Claim
32 words
The method according to claim 10, wherein the germanium ions implantation is conducted with an implant energy of 20-100 KeV and an implant dose of 5×10 14 -1×10 16 atoms/cm 2 .
Claim 16
Dependent Claim
19 words
The method according to claim 10, wherein the first and second gate oxide layers are formed by thermal oxidation.
Claim 17
Dependent Claim
18 words
The method according to claim 12, wherein the thermal oxidation in conducted at a temperature of 800-850° C.
References Cited (Backward Citations)
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