US6139628A
Expired / Lapsed
US
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Method of forming gallium nitride crystal
Assignee: Panasonic Holdings Corp
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Filing: 1998-04-08
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Granted: 2000-10-31
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Expires: 2018-04-08
Abstract
Abstract The method of forming gallium nitride crystal comprises the following three steps: the first step of heating a silicon substrate 1 in gas atmosphere including gallium, the second step of forming the first gallium nitride 3 on the silicon substrate 1, the third step of forming the second gallium nitride 4 on the first gallium nitride 3 at the higher temperature than when the first gallium nitride 3 has been formed. The method including these three steps can produce a thick film crystal of gallium nitride having excellent flatness and crystallinity.
Inventors
- 👤 Masaaki Yuri
- 👤 Tetsuzo Ueda
- 👤 Takaaki Baba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:20
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; C30B29/00; C30B29/10; C30B29/40; C30B29/403; C30B29/406
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
62 words
A method of forming gallium nitride crystal comprising: forming a growth nuclear including a compound comprising gallium on a substrate by heating said substrate in gas atmosphere including a compound comprising gallium, forming first gallium nitride on said substrate, and forming second gallium nitride on said first gallium nitride at a higher temperature than when the first gallium nitride has been formed.
Claim 2
Independent Claim
62 words
A method of forming gallium nitride crystal comprising: forming a growth nuclear including a compound comprising gallium on a substrate by heating said substrate in gas atmosphere including a compound comprising gallium, forming first gallium nitride on said substrate, and forming second gallium nitride on said first gallium nitride at a higher temperature than when the first gallium nitride has been formed.
Claim 3
Dependent Claim
23 words
The method of forming gallium nitride crystal as defined in claim 1, further comprising removing said substrate after forming the second gallium nitride.
Claim 4
Dependent Claim
29 words
The method of forming gallium nitride crystal as defined in claim 1, wherein said substrate comprises at least one of sapphire, aluminum nitride, silicon carbide, zinc oxide, and silicon.
Claim 5
Dependent Claim
32 words
The method for forming gallium nitride crystal as defined in claim 1, wherein the gas atmosphere used in forming the growth nuclear comprises gas passed over a surface of heated gallium trichloride.
Claim 6
Dependent Claim
34 words
The method for forming gallium nitride crystal as defined in claim 1, wherein the gas atmosphere used in forming the growth nuclear comprises hydrogen chloride gas passed over a surface of heated metal gallium.
Claim 7
Dependent Claim
34 words
The method for forming gallium nitride crystal as defined in claim 1, wherein the gas atmosphere used in forming the growth nuclear comprises gas passed over a surface of an organic metal including gallium.
Claim 8
Independent Claim
33 words
A method of forming a growth nuclear including a compound comprising gallium on a substrate, said method including the step of heating said substrate in a gas atmosphere including a compound comprising gallium.
Claim 9
Independent Claim
33 words
A method of forming a growth nuclear including a compound comprising gallium on a substrate, said method including the step of heating said substrate in a gas atmosphere including a compound comprising gallium.
Claim 10
Dependent Claim
30 words
The method of forming a growth nuclear including a compound comprising gallium on a substrate as defined in claim 7, wherein said gas atmosphere further includes a compound comprising nitrogen.
Claim 11
Dependent Claim
27 words
The method of forming a growth nuclear including a compound comprising gallium on a substrate as defined in claim 7, wherein said gas atmosphere further includes ammonia.
Claim 12
Dependent Claim
27 words
The method of forming a growth nuclear including a compound comprising gallium on a substrate as defined in claim 7, wherein said growth nuclear comprises gallium dichloride.
Claim 13
Dependent Claim
35 words
The method of forming a growth nuclear including a compound comprising gallium on a substrate as defined in claim 7, further comprising forming an aluminum nitride layer on said substrate before forming the growth nuclear.
Claim 14
Dependent Claim
35 words
The method of forming a growth nuclear including a compound comprising gallium on a substrate as defined in claim 7, further comprising forming a silicon carbide layer on said substrate before forming the growth nuclear.
Claim 15
Dependent Claim
35 words
The method of forming a growth nuclear including a compound comprising gallium on a substrate as defined in claim 7, further comprising forming a zinc oxide layer on said substrate before forming the growth nuclear.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-31 | 2004-05-01 | 2004-10-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-31 | 2008-05-01 | 2008-10-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-31 | 2012-05-01 | 2012-10-31 | $7700.00 | Window Closed / Lapsed |