US6130123A
Expired / Lapsed
US
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Method for making a complementary metal gate electrode technology
Assignee: Intel Corp
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Filing: 1998-06-30
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Granted: 2000-10-10
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Expires: 2018-06-30
Abstract
Abstract A method for making a circuit device that includes a first transistor having a first metal gate electrode overlying a first gate dielectric on a first area of a semiconductor substrate. The first gate electrode has a work function corresponding to the work function of one of P-type silicon and N-type silicon. The circuit device also includes a second transistor coupled to the first transistor. The second transistor has a second metal gate electrode over a second gate dielectric on a second area of the semiconductor substrate. The second gate metal gate electrode has a work function corresponding to the work function of the other one of P-type silicon and N-type silicon.
Inventors
- 👤 Chunlin Liang
- 👤 Gang Bai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:10
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0177; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
35 words
A method of forming a circuit device, comprising: forming a gate dielectric overlying a region of a substrate; depositing a metal layer over the gate dielectric; and modifying the Fermi level of the metal layer.
Claim 2
Independent Claim
35 words
A method of forming a circuit device, comprising: forming a gate dielectric overlying a region of a substrate; depositing a metal layer over the gate dielectric; and modifying the Fermi level of the metal layer.
Claim 3
Dependent Claim
15 words
The method of claim 1 further comprising patterning the metal layer into a gate electrode.
Claim 4
Dependent Claim
23 words
The method of claim 1, wherein modifying the Fermi level of the metal layer includes chemically reacting the metal layer with a compound.
Claim 5
Dependent Claim
39 words
The method of claim 3, wherein the region of the substrate includes a first region and a second region, and prior to modifying the first metal layer, the method further comprises: masking the metal layer over the second region.
Claim 6
Dependent Claim
18 words
The method of claim 4, wherein the masking of the metal layer includes masking with an inert compound.
Claim 7
Dependent Claim
37 words
The method of claim 4, wherein the masking of the metal layer includes masking with a masking compound that reacts with the metal layer over the second region to modify the Fermi level of the reaction product.
Claim 8
Dependent Claim
11 words
The method of claim 6, wherein the masking compound is polysilicon.
Claim 9
Dependent Claim
29 words
The method of claim 1, wherein modifying the Fermi level of the metal layer includes alloying the metal layer with one of a second metal layer and a silicon.
Claim 10
Dependent Claim
35 words
The method of claim 8, wherein the region of the substrate includes a first region and a second region, and modifying the metal layer comprises modifying one of the first region and the second region.
Claim 11
Dependent Claim
15 words
The method of claim 9, wherein alloying the metal layer includes alloying with a polysilicon.
Claim 12
Dependent Claim
22 words
The method of claim 1, wherein modifying the Fermi level of the metal layer includes implanting an ion into the metal layer.
Claim 13
Dependent Claim
35 words
The method of claim 11, wherein the region of the substrate includes a first region and a second region, and modifying the metal layer comprises modifying one of the first region and the second region.
Claim 14
Dependent Claim
35 words
The method of claim 12, wherein after modifying the metal layer of one of the first region and the second region, the method comprises modifying the other of the first region and the second region.
References Cited (Backward Citations)
US5705411A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-10 | 2004-04-10 | 2004-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-10 | 2008-04-10 | 2008-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-10 | 2012-04-10 | 2012-10-10 | $7700.00 | Window Closed / Lapsed |