US6121637A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor light emitting device with increased luminous power
Assignee: Rohm Co Ltd
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Filing: 1998-10-02
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Granted: 2000-09-19
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Expires: 2018-10-02
Abstract
Abstract In a chip-type light emitting device in which first and second terminal electrodes are formed on both ends of an insulating substrate with a light emitting device chip being mounted on the surface side, the LED chip is directly formed on the insulating substrate, and at least a portion of the insulating substrate on which the LED chip is mounted is formed by a whitish material. Alternatively, in a lamp-type semiconductor light emitting device in which the LED chip is mounted on the top of a lead, and is covered with a dome-shaped package, or in a chip-type semiconductor light emitting device, a bonding material used for bonding the LED chip is made of a whitish material. Therefore, it becomes possible to reflect light that proceeds toward the back surface side of the LED chip efficiently, and consequently to increase the necessary luminosity even if the light-emitting efficiency inside the LED chip remains the same.
Inventors
- 👤 Shinji Isokawa
- 👤 Hidekazu Toda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 21:49
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/85; H10H20/8506; H10W; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/736; H10W90/751; H10W90/754; H10W90/756
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
154 words
A chip-type semiconductor light emitting device comprising: an insulating substrate; first and second terminal electrodes that are placed at both ends of a surface of said insulating substrate, with at least a portion of said surface of said insulating substrate located between said first and second terminal electrodes being formed to have a whitish color; a light emitting chip that is directly mounted with a bonding material on said portion of said surface of said insulating substrate, said light emitting chip having a p-side electrode and an n-side electrode electrically connected to said first and second terminal electrodes respectively, and said light emitting chip having a transparent substrate which is transparent to the light emitted, and said p-side electrode and n-side electrode are both provided on a semiconductor layer side which is laminated on said transparent substrate; and a package for covering said light emitting chip and a periphery of said light emitting chip.
Claim 2
Dependent Claim
154 words
A chip-type semiconductor light emitting device comprising: an insulating substrate; first and second terminal electrodes that are placed at both ends of a surface of said insulating substrate, with at least a portion of said surface of said insulating substrate located between said first and second terminal electrodes being formed to have a whitish color; a light emitting chip that is directly mounted with a bonding material on said portion of said surface of said insulating substrate, said light emitting chip having a p-side electrode and an n-side electrode electrically connected to said first and second terminal electrodes respectively, and said light emitting chip having a transparent substrate which is transparent to the light emitted, and said p-side electrode and n-side electrode are both provided on a semiconductor layer side which is laminated on said transparent substrate; and a package for covering said light emitting chip and a periphery of said light emitting chip.
Claim 3
Dependent Claim
18 words
The semiconductor light emitting device as defined in claim 1, wherein said bonding material is a whitish material.
Claim 4
Dependent Claim
26 words
The semiconductor light emitting device as defined in claim 2, wherein said whitish material is prepared by mixing boron nitride (BN) with a transparent epoxy resin.
Claim 5
Dependent Claim
36 words
The semiconductor light emitting device as defined in claim 1, wherein said light emitting chip is a chip that is formed by stacking layers made of a gallium nitride based compound semiconductor on a sapphire substrate.
Claim 6
Dependent Claim
18 words
The semiconductor light emitting device as defined in claim 1, wherein said insulating substrate is a heat-resistant substrate.
Claim 7
Dependent Claim
18 words
The semiconductor light emitting device as defined in claim 1, wherein said insulating substrate is a ceramic substrate.
Claim 8
Dependent Claim
82 words
A semiconductor light emitting device comprising: first and second conductive members; a light emitting chip; a bonding material die-bonding said light emitting chip on one of said first and second conductive members; connecting means for electrically connecting two electrodes of said light emitting chip with said first and second conductive members respectively; and a package, made of resin, for covering said light emitting chip and a periphery of said light emitting chip, wherein said bonding material is made of a whitish material.
Claim 9
Dependent Claim
82 words
A semiconductor light emitting device comprising: first and second conductive members; a light emitting chip; a bonding material die-bonding said light emitting chip on one of said first and second conductive members; connecting means for electrically connecting two electrodes of said light emitting chip with said first and second conductive members respectively; and a package, made of resin, for covering said light emitting chip and a periphery of said light emitting chip, wherein said bonding material is made of a whitish material.
Claim 10
Dependent Claim
59 words
The semiconductor light emitting device as defined in claim 7, wherein said one of said conductive members corresponds to a top portion of a lead, said light emitting chip is die-bonded to an inside of a recessed section of said top portion of said lead, and said light emitting chip is covered with a package having a dome shape.
Claim 11
Dependent Claim
26 words
The semiconductor light emitting device as defined in claim 7, wherein said bonding material is prepared by mixing boron nitride (BN) with a transparent epoxy resin.
Claim 12
Dependent Claim
36 words
The semiconductor light emitting device as defined in claim 7, wherein said light emitting chip is a chip that is formed by stacking layers made of a gallium nitride based compound semiconductor on a sapphire substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-09-19 | 2004-03-20 | 2004-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-09-19 | 2008-03-20 | 2008-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-09-19 | 2012-03-20 | 2012-09-19 | $7700.00 | Window Closed / Lapsed |