US6121125A
Expired / Lapsed
US
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Method of forming polycide gate
Assignee: United Microelectronics Corp
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Filing: 1998-11-04
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Granted: 2000-09-19
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Expires: 2018-11-04
Abstract
Abstract A method of forming a polycide gate is provided. On a substrate having a gate oxide layer thereon, a polysilicon layer and a silicide layer are formed. A multi-insulation layer and a hard material layer are formed on the silicide layer. The multi-insulation layer comprises multiple insulation layers. The thermal expansion coefficients of these insulation layers are between the thermal expansion coefficients of the silicide layer and the hard material layer, and moreover, are closer to it of the hard material layer gradually layer by layer. The hard mask layer, multi-insulation layer, silicide layer and the polysilicon layer are then defined to form a polycide gate. A spacer is formed to cover a side wall of the gate.
Inventors
- 👤 Tzung-Han Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:36
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/021; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/663; H10P; H10P50/00; H10P50/71
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
126 words
A method of forming a polycide gate on a gate oxide layer on a substrate, comprising: forming a polysilicon layer and a silicide layer; forming a multi-insulation layer comprising at least two insulation sub-layers on the silicide layer, the insulation sub-layers having different thermal expansion coefficients, wherein a first insulation layer of the multi-insulation layer has a thermal expansion coefficient closer to a thermal expansion coefficient of the silicide layer compared to a second insulation layer of the multi-insulation layer; forming a material layer on the multi-insulation layer; patterning the material layers, the multi-insulation layer, the silicide layer and the polysilicon layer to form a gate; forming a thin dielectric layer conformal to the gate; and forming a spacer on a side wall of the gate.
Claim 2
Independent Claim
126 words
A method of forming a polycide gate on a gate oxide layer on a substrate, comprising: forming a polysilicon layer and a silicide layer; forming a multi-insulation layer comprising at least two insulation sub-layers on the silicide layer, the insulation sub-layers having different thermal expansion coefficients, wherein a first insulation layer of the multi-insulation layer has a thermal expansion coefficient closer to a thermal expansion coefficient of the silicide layer compared to a second insulation layer of the multi-insulation layer; forming a material layer on the multi-insulation layer; patterning the material layers, the multi-insulation layer, the silicide layer and the polysilicon layer to form a gate; forming a thin dielectric layer conformal to the gate; and forming a spacer on a side wall of the gate.
Claim 3
Dependent Claim
15 words
The method according to claim 1, wherein the silicide layer comprises a tungsten silicide layer.
Claim 4
Dependent Claim
25 words
The method according to claim 1, wherein the silicide layer further comprises a first silicide layer, a second silicide layer, and a third silicide layer.
Claim 5
Dependent Claim
37 words
The method according to claim 3, wherein the first and the third silicide layers each has a weight proportion of metal to silicon larger than a weight proportion of metal to silicon in the second silicide layer.
Claim 6
Dependent Claim
53 words
The method according to claim 1, wherein the multi-insulation layers comprises at least a first insulation sub-layer formed on the silicide layer with a thermal expansion coefficient close to the silicide layer, and a second insulation sub-layer formed on the first insulation sub-layer with a thermal expansion coefficient close to the material layer.
Claim 7
Dependent Claim
15 words
The method according to claim 5, wherein the material layer includes a silicon nitride layer.
Claim 8
Dependent Claim
16 words
The method according to claim 6, wherein the first sub-insulation layer includes a silicon oxide layer.
Claim 9
Dependent Claim
16 words
The method according to claim 7, wherein the second sub-insulation layer includes a silicon oxy-nitride layer.
Claim 10
Dependent Claim
15 words
The method according to claim 1, wherein the material layer includes a silicon nitride layer.
Claim 11
Dependent Claim
16 words
The method according to claim 9, wherein the first sub-insulation layer includes a silicon oxide layer.
Claim 12
Dependent Claim
16 words
The method according to claim 10, wherein the second sub-insulation layer includes a silicon oxy-nitride layer.
Claim 13
Independent Claim
113 words
A method of forming a polycide gate on a gate oxide layer on a substrate, comprising: forming a polysilicon layer and a silicide layer; forming an insulation layer on the silicide layer; forming a material layer on the insulation layer; patterning the material layer, the insulation layer, the silicide layer and the polysilicon layer to form a gate; forming a thin dielectric layer conformal to the gate; and forming a spacer on a side wall of the gate; wherein the insulation layer is formed layer by layer with a gradually increasing difference in thermal expansion coefficient to the silicide layer and a gradually decreasing difference in thermal expansion coefficient to the material layer.
Claim 14
Independent Claim
113 words
A method of forming a polycide gate on a gate oxide layer on a substrate, comprising: forming a polysilicon layer and a silicide layer; forming an insulation layer on the silicide layer; forming a material layer on the insulation layer; patterning the material layer, the insulation layer, the silicide layer and the polysilicon layer to form a gate; forming a thin dielectric layer conformal to the gate; and forming a spacer on a side wall of the gate; wherein the insulation layer is formed layer by layer with a gradually increasing difference in thermal expansion coefficient to the silicide layer and a gradually decreasing difference in thermal expansion coefficient to the material layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-09-19 | 2004-03-20 | 2004-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-09-19 | 2008-03-20 | 2008-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-09-19 | 2012-03-20 | 2012-09-19 | $7700.00 | Window Closed / Lapsed |