Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes

Claim 2

A nonvolatile memory cell, comprising: a substrate; an isolation device formed in the substrate, the isolation device including at least a first region and a second region in the substrate; a first conductive line formed on the substrate; a magnetic tunnel junction device formed over the first conductive line; a by-pass conductor electrically connecting the first region of the isolation device to the magnetic tunnel junction device; and a second conductive line formed on and being electrically connected to the magnetic tunnel junction device.

Claim 3

The nonvolatile memory cell according to claim 1, wherein the isolation device is a diode, and wherein the second region is electrically connected to the first conductive line.

Claim 4

The nonvolatile memory cell according to claim 2, wherein the first region is a p-type region and the second region is an n-type region.

Claim 5

The nonvolatile memory cell according to claim 2, wherein the first region is an n-type region and the second region is a p-type region.

Claim 6

The nonvolatile memory cell according to claim 2, further comprising a region of polysilicon gate material formed on the diode below the first conductive line.

Claim 7

The nonvolatile memory cell according to claim 2, wherein the by-pass conductor is connected to the first region of the diode below the first conductive line.

Claim 8

The nonvolatile memory cell according to claim 2, wherein the by-pass conductor is formed using a lithographic technique.

Claim 9

The nonvolatile memory cell according to claim 2, wherein the by-pass conductor is formed using a sidewall deposition technique.

Claim 10

The nonvolatile memory cell according to claim 2, wherein the nonvolatile memory cell is about 1.6 μm or less by about 1.92 μm or less in size.

Claim 11

The nonvolatile memory cell according to claim 1, wherein the isolation device is a metal-oxide semiconductor transistor, the first region is a drain region, the second region is a source region that is electrically connected to the first conductive line, and the metal-oxide semiconductor transistor includes a gate region that is electrically connected to the by-pass conductor.

Claim 12

The nonvolatile memory cell according to claim 1, wherein the isolation device is a metal-oxide semiconductor transistor, the first region is a source region, the second region is a drain region that is electrically connected to the first conductive, line, and the metal-oxide semiconductor transistor includes a gate region that is electrically connected to the first conductive line.

Claim 13

The nonvolatile memory cell according to claim 1, wherein the isolation device is a metal-oxide semiconductor transistor, the first region is a drain region and the second region is a source region that is electrically connected to a ground potential, the metal-oxide semiconductor transistor further including a gate region that is electrically connected to a control line.

Claim 14

The nonvolatile memory cell according to claim 12, further comprising: a reference resistor corresponding to the nonvolatile memory cell; and an amplifier having a first input and a second input, the first input being electrically connected to the second conductive line, the second input being electrically connected to the reference resistor, the amplifier outputting a signal related to a sensed resistance of the magnetic tunnel junction device with respect to a sensed resistance of the reference resistor.

Claim 15

A nonvolatile memory cell array, comprising: a substrate; a plurality of first conductive lines, each first conductive line being formed on the substrate; a plurality of second conductive lines overlapping the first conductive lines at a plurality of intersection regions; and a plurality of nonvolatile memory cells, a nonvolatile memory cell being formed at an intersection region, each nonvolatile memory cell including, an isolation device formed in the substrate, the isolation device including a first region and a second region in the substrate; a magnetic tunnel junction device formed over the first conductive line; a by-pass conductor electrically connecting the first region of the isolation device to the magnetic tunnel junction device; and a second conductive line of the plurality of second conductive lines being formed on and being electrically connected to the magnetic tunnel junction device.

Claim 16

A nonvolatile memory cell array, comprising: a substrate; a plurality of first conductive lines, each first conductive line being formed on the substrate; a plurality of second conductive lines overlapping the first conductive lines at a plurality of intersection regions; and a plurality of nonvolatile memory cells, a nonvolatile memory cell being formed at an intersection region, each nonvolatile memory cell including, an isolation device formed in the substrate, the isolation device including a first region and a second region in the substrate; a magnetic tunnel junction device formed over the first conductive line; a by-pass conductor electrically connecting the first region of the isolation device to the magnetic tunnel junction device; and a second conductive line of the plurality of second conductive lines being formed on and being electrically connected to the magnetic tunnel junction device.

Claim 17

The nonvolatile memory cell array according to claim 14, wherein the isolation device is a diode, and the second region is electrically connected to a first conductive line of the plurality of first conductive lines.

Claim 18

The nonvolatile memory cell array according to claim 15, wherein the first region is a p-type region and the second region is an n-type region.

Claim 19

The nonvolatile memory cell array according to claim 15, wherein the first region is an n-type region and the second region is a p-type region.

Claim 20

The nonvolatile memory cell array according to claim 15, wherein the nonvolatile memory cell includes a region of polysilicon gate material formed on the diode below the first conductive line.

Claim 21

The nonvolatile memory cell array according to claim 15, wherein the by-pass conductor is connected to the first region of the diode below the first conductive line.

Claim 22

The nonvolatile memory cell array according to claim 15, wherein the by-pass conductor is formed using a lithographic technique.

Claim 23

The nonvolatile memory cell array according to calling 15, wherein the by-pass conductor is formed using a sidewall deposition technique.

Claim 24

The nonvolatile memory cell array according to calling 15, wherein the by-pass conductor is formed using a sidewall deposition technique.

Claim 25

The nonvolatile memory cell array according to claim 15, wherein the nonvolatile memory cell is about 1.6 μm or less by about 1.92 μm or less in size.

Claim 26

The nonvolatile memory cell array according to claim 14, wherein the isolation device is a metal-oxide semiconductor transistor, the first region is a drain region, the second region is a source region that is electrically connected to a first conductive line of the plurality of first conductive lines, and the metal-oxide semiconductor transistor includes a gate region that is electrically connected to the by-pass conductor.

Claim 27

The nonvolatile memory cell array according to claim 14, wherein the isolation device is a metal-oxide semiconductor transistor, the first region is a source region, the second region is a drain region that is electrically connected to a first conductive line of the plurality of first conductive lines, and the metal-oxide semiconductor transistor includes a gate region that is electrically connected to the first conductive line.

Claim 28

The nonvolatile memory cell array according to claim 14, wherein the isolation device is a metal-oxide semiconductor transistor, the first region is a drain region and the second region is a source region that is electrically connected to a ground potential, the metal-oxide semiconductor transistor further including a gate region that is electrically connected to a control line.

Claim 29

The nonvolatile memory cell array according to claim 25, further comprising: a reference resistor corresponding to the nonvolatile memory cell; and an amplifier having a first input and a second input, the first input being electrically connected to the second conductive line, the second input being electrically connected to the reference resistor, the amplifier outputting a signal related to a sensed resistance of the magnetic tunnel junction device with respect to a sensed resistance of the reference resistor.