US6083839A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control
Assignee: Micron Technology Inc
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Filing: 1997-12-31
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Granted: 2000-07-04
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Expires: 2017-12-31
Abstract
Abstract The present invention is an improved apparatus and process for chemical mechanical polishing (CMP) layers which have a low dielectric constant (k). The present invention uses a magnetic slurry and a magnetic coil for polishing the wafer with the magnetic slurry. By using a magnetic slurry and a magnetic coil the force used during polishing can be controlled resulting greater control over the CMP process during the polishing of low k materials.
Inventors
- 👤 Lawrence D. Wong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 14:16
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; B; B24; B24B; B24B1/00; B24B1/005; B24B37/00; B24B37/04; C; C09; C09G; C09G1/00; C09G1/02
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
31 words
A method for planarization comprising: holding a wafer; depositing a magnetic slurry on said wafer; and polishing said wafer with said magnetic slurry by moving a magnetic coil beneath said wafer.
Claim 2
Independent Claim
31 words
A method for planarization comprising: holding a wafer; depositing a magnetic slurry on said wafer; and polishing said wafer with said magnetic slurry by moving a magnetic coil beneath said wafer.
Claim 3
Dependent Claim
25 words
The method as described in claim 1 wherein said step of holding said wafer is performed by using an electrostatic chuck to hold said wafer.
Claim 4
Dependent Claim
20 words
The method as described in claim 1 wherein said magnetic slurry comprises a ferromagnetic material and a silica base slurry.
Claim 5
Dependent Claim
20 words
The method as described in claim 1 wherein said magnetic slurry comprises a ferromagnetic material and a cerium base slurry.
Claim 6
Dependent Claim
38 words
The method as described in claim 1 wherein said step of polishing said wafer is performed by moving said magnetic coil beneath said wafer in at least one of the following directions: an x-y direction, a circular direction.
Claim 7
Dependent Claim
39 words
The method as described in claim 1 wherein said step of polishing said wafer is performed by moving said magnetic coil beneath said wafer, wherein said magnetic coil has a field strength in the range of approximately 100-1,000 Gauss.
Claim 8
Dependent Claim
39 words
The method as described in claim 1 wherein said step of polishing said wafer is performed by moving said magnetic coil beneath said wafer, wherein said magnetic coil has a field strength in the range of approximately 800-900 Gauss.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-04 | 2004-01-03 | 2004-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-04 | 2008-01-03 | 2008-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-04 | 2012-01-03 | 2012-07-04 | $7700.00 | Window Closed / Lapsed |