US6080445A
Expired / Lapsed
US
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Method of forming films over insulating material
Assignee: Citizen Holdings Co Ltd
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Filing: 1998-02-19
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Granted: 2000-06-27
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Expires: 2018-02-19
Abstract
Abstract A method of forming films over an insulating material is provided whereby an underlayer film having electric conductivity is formed on the surface of the insulating material constituting a base member, and a hard carbon film is formed over the underlayer film so that the surface electrical resistance value of the hard carbon film can be controlled so as not to cause the surface thereof to be charged with static electricity by varying an electrical resistance value of the underlayer film. In the case where the underlayer film is formed of a metal film composed of titanium, chromium, tungsten, or the like, the resistance value thereof can be changed by varying the thickness of the metal film. In the case where the underlayer film is formed of a semiconductor film composed of silicon, germanium, or the like, the resistance value thereof can be changed by varying the thickness of the semiconductor film, or the concentration of an impurity added thereto.
Inventors
- 👤 Osamu Sugiyama
- 👤 Yukio Miya
- 👤 Ryota Koike
- 👤 Takashi Toida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:27
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/0281; C23C16/22; C23C16/26; Y; Y10; Y10S; Y10S427/00; Y10S427/103
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
67 words
A method of forming films over an insulating material comprising steps of: forming an underlayer film of a metal, a metal carbide, a metal nitride or a semiconductor on a surface of the insulating material; and forming a diamond-like carbon film over the underlayer film, a surface electrical resistance value of the diamond-like carbon film being controlled by varying an electrical resistance value of the underlayer film.
Claim 2
Independent Claim
67 words
A method of forming films over an insulating material comprising steps of: forming an underlayer film of a metal, a metal carbide, a metal nitride or a semiconductor on a surface of the insulating material; and forming a diamond-like carbon film over the underlayer film, a surface electrical resistance value of the diamond-like carbon film being controlled by varying an electrical resistance value of the underlayer film.
Claim 3
Dependent Claim
23 words
A method of forming films over an insulating material according to claim 1 wherein a metal film is formed as the underlayer film.
Claim 4
Dependent Claim
23 words
A method of forming films over an insulating material according to claim 1 wherein a semiconductor film is formed as the underlayer film.
Claim 5
Dependent Claim
54 words
A method of forming films over an insulating material according to claim 1 wherein a first underlayer film of a metal film is formed on the surface of the insulating material, and a second underlayer film of a semiconductor film is formed over the first underlayer film, the two films constituting the underlayer film.
Claim 6
Dependent Claim
32 words
A method of forming films over an insulating material according to claim 2 wherein the electrical resistance value of the underlayer film is varied by changing the thickness of the metal film.
Claim 7
Dependent Claim
32 words
A method of forming films over an insulating material according to claim 3 wherein the electrical resistance value of the underlayer film is varied by changing the thickness of the semiconductor film.
Claim 8
Dependent Claim
36 words
A method of forming films over an insulating material according to claim 3 wherein the electrical resistance value of the underlayer film is varied by changing a concentration of an impurity added to the semiconductor film.
Claim 9
Dependent Claim
52 words
A method of forming films over an insulating material according to claim 4 wherein the electrical resistance value of the underlayer film is varied by changing at least either of a thickness of the first underlayer film of the metal film or that of the second underlayer film of the semiconductor film.
Claim 10
Dependent Claim
56 words
A method of forming films over an insulating material according to claim 4 wherein the electrical resistance value of the underlayer film is varied by changing at least either of a thickness of the first underlayer film of the metal film or concentration of an impurity added to the second underlayer film of the semiconductor film.
Claim 11
Dependent Claim
44 words
A method of forming films over an insulating material according to claim 1 wherein the underlayer film is formed of a metal selected from the group consisting of titanium, chromium and tungsten; or a carbide or a nitride of any metal among said metals.
Claim 12
Dependent Claim
41 words
A method of forming films over an insulating material according to claim 3 wherein the semiconductor film as the underlayer film is formed of a material selected from the group consisting of silicon, germanium, and a compound of silicon or germanium.
Claim 13
Dependent Claim
53 words
A method of forming films over an insulating material according to claim 4 wherein the first underlayer film of the metal film is formed of a metal selected from the group consisting of titanium, chromium, and tungsten, while the second underlayer film of the semiconductor film is formed of either silicon or germanium.
Claim 14
Dependent Claim
80 words
A method of forming films over an insulating material according to claim 1 wherein a first underlayer film of a metal film is formed on the surface of the insulating material, a second underlayer film of a metal film having higher electric conductivity than that of the metal film is formed over the first underlayer film, and a third underlayer film of a semiconductor film is further formed over the second underlayer film, the three films constituting the underlayer film.
Claim 15
Dependent Claim
35 words
A method of forming films over an insulating material according to claim 13 wherein the surface electrical resistance value of the underlayer film is changed by varying primarily the thickness of the second underlayer film.
Claim 16
Dependent Claim
65 words
A method of forming films over an insulating material according to claim 13 wherein the first underlayer film is formed of a metal selected from the group consisting of titanium, chromium, and tungsten, the second underlayer film is formed of a metal selected from the group consisting of gold, copper, indium, and aluminum, and the third underlayer film is formed of either silicon or germanium.
Claim 17
Dependent Claim
24 words
A method of forming films over an insulating material according to claim 1 wherein the insulating material is composed of either glass or ceramic.
Claim 18
Dependent Claim
28 words
A method of forming films over an insulating material according to claim 1 wherein the insulating material comprises a jig or tool for handling semiconductor wafers or chips.
Claim 19
Dependent Claim
34 words
A method of forming films over an insulating material according to claim 1 wherein the insulating material comprises a jig or tool for handling semiconductor wafers or chips, composed of either glass or ceramic.
Claim 20
Dependent Claim
41 words
A method of forming films over an insulating material according to claim 18 wherein a metal film is formed as the underlayer film, the electrical resistance value of the underlayer film being changed by varying the thickness of the metal film.
Claim 21
Dependent Claim
49 words
A method of forming films over an insulating material according to claim 18 wherein a semiconductor film is formed as the underlayer film, the electrical resistance value of the underlayer film being changed by varying the thickness of the semiconductor film or a concentration of an impurity added thereto.
Claim 22
Dependent Claim
98 words
A method of forming films over an insulating material according to claim 18 wherein a first underlayer film of a metal film is formed on the surface of a transfer arm comprising the insulating material, and a second underlayer film of a semiconductor film is formed over the first underlayer film, the two films constituting the underlayer film, the electrical resistance value of which is changed by varying either the thickness of the first underlayer film of the metal film, or the thickness or a concentration of an impurity of the second underlayer film of the semiconductor film.
Claim 23
Dependent Claim
102 words
A method of forming films over an insulating material according to claim 18 wherein a first underlayer film of a metal film is formed on the surface of a transfer arm comprising the insulating material, a second underlayer film of a metal film having higher electric conductivity than that of the metal film is formed over the first underlayer film, and a third underlayer film of a semiconductor film is further formed over the second underlayer film, the three films constituting the underlayer film, the electrical resistance value of which is changed by varying primarily the thickness of the second underlayer film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-06-27 | 2003-12-27 | 2004-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-06-27 | 2007-12-27 | 2008-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-06-27 | 2011-12-27 | 2012-06-27 | $7700.00 | Window Closed / Lapsed |