US6075719A
Expired / Lapsed
US
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Method of programming phase-change memory element
Assignee: Ovonyx Memory Technology LLC
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Filing: 1999-06-22
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Granted: 2000-06-13
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Expires: 2019-06-22
Abstract
Abstract A method of programming an electrically programmable phase-change memory element to the low resistance state. A first pulse of energy sufficient to transform the device from the low to high resistance states is applied, and a second pulse of energy sufficient to transform the device from the high to low resistance states is applied following the first pulse. In another programming method, the present and desired device states are compared, and programming pulses are applied only if the state of the device needs to be changed.
Inventors
- 👤 Tyler Lowrey
- 👤 Guy C. Wicker
- 👤 Boil Pashmakov
- 👤 Patrick J. Klersy
- 👤 Sergey A. Kostylev
- 👤 Wolodymyr Czubatyj
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:47
CPC Classifications
G; G11; G11C; G11C13/00; G11C13/0002; G11C13/0021; G11C13/0069; G11C13/0004; G11C13/0064
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
108 words
A method of programming an electrically programmable, phase-change memory element to a low resistance state, said memory element including a volume of phase-change memory material having at least said low resistance state and a detectably distinct high resistance state, said method comprising the steps of: applying a first pulse of energy to said memory material, said first pulse sufficient to transform said memory material from said low resistance state to said high resistance state; and applying a second pulse of energy to said memory material following said first pulse, said second pulse sufficient to transform said memory material from said high resistance state to said low resistance state.
Claim 2
Independent Claim
108 words
A method of programming an electrically programmable, phase-change memory element to a low resistance state, said memory element including a volume of phase-change memory material having at least said low resistance state and a detectably distinct high resistance state, said method comprising the steps of: applying a first pulse of energy to said memory material, said first pulse sufficient to transform said memory material from said low resistance state to said high resistance state; and applying a second pulse of energy to said memory material following said first pulse, said second pulse sufficient to transform said memory material from said high resistance state to said low resistance state.
Claim 3
Dependent Claim
19 words
The method of claim 1, wherein the energy of said first pulse and said second pulse is electrical energy.
Claim 4
Dependent Claim
16 words
The method of claim 1, wherein said first pulse and said second pulse are current pulses.
Claim 5
Dependent Claim
21 words
The method of claim 1, wherein the duration of said first pulse is less than the duration of said second pulse.
Claim 6
Dependent Claim
21 words
The method of claim 1, wherein the amplitude of said first pulse is greater than the amplitude of said second pulse.
Claim 7
Dependent Claim
15 words
The method of claim 1, wherein said phase-change material comprises at least one chalcogen element.
Claim 8
Independent Claim
93 words
A method of setting an electrically programmable, phase-change memory element having at least a low resistance state and a detectably distinct high resistance state, said method comprising the steps of: applying a first pulse of energy to said memory material, said first pulse sufficient to transform said memory material from said low resistance state to said high resistance state; and applying a second pulse of energy to said memory material following said first pulse, said second pulse sufficient to transform said memory material from said high resistance state to said low resistance state.
Claim 9
Independent Claim
93 words
A method of setting an electrically programmable, phase-change memory element having at least a low resistance state and a detectably distinct high resistance state, said method comprising the steps of: applying a first pulse of energy to said memory material, said first pulse sufficient to transform said memory material from said low resistance state to said high resistance state; and applying a second pulse of energy to said memory material following said first pulse, said second pulse sufficient to transform said memory material from said high resistance state to said low resistance state.
Claim 10
Dependent Claim
19 words
The method of claim 7, wherein the energy of said first pulse and said second pulse is electrical energy.
Claim 11
Dependent Claim
16 words
The method of claim 7, wherein said first pulse and said second pulse are current pulses.
Claim 12
Dependent Claim
21 words
The method of claim 7, wherein the duration of said first pulse is less than the duration of said second pulse.
Claim 13
Dependent Claim
21 words
The method of claim 7, wherein the amplitude of said first pulse is greater than the amplitude of said second pulse.
Claim 14
Dependent Claim
15 words
The method of claim 7, wherein said phase-change material comprises at least one chalcogen element.
Claim 15
Independent Claim
78 words
A method of programming an electrically programmable, phase-change memory element to a desired state, said memory element including a volume of phase-change memory material having at least a low resistance state and a detectably distinct high resistance state, said method comprising the steps of: reading the present state of said memory element; determining whether the present state is equal to said desired state; and if not, programming said memory element from the present state to said desired state.
Claim 16
Independent Claim
78 words
A method of programming an electrically programmable, phase-change memory element to a desired state, said memory element including a volume of phase-change memory material having at least a low resistance state and a detectably distinct high resistance state, said method comprising the steps of: reading the present state of said memory element; determining whether the present state is equal to said desired state; and if not, programming said memory element from the present state to said desired state.
Claim 17
Dependent Claim
31 words
The method of claim 13, wherein said reading step comprises the step of: applying a read pulse of energy to said memory material; and determining the resistance of said memory material.
Claim 18
Dependent Claim
11 words
The method of claim 14, wherein said energy is electrical energy.
Claim 19
Dependent Claim
13 words
The method of claim 14, wherein said read pulse is a voltage pulse.
Claim 20
Dependent Claim
26 words
The method of claim 13, wherein said determining step comprises the step of comparing the present resistance of said memory material to said desired resistance state.
Claim 21
Dependent Claim
13 words
The method of claim 13, wherein said phase-change material includes a chalcogen element.
References Cited (Backward Citations)
US5933365A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-06-13 | 2003-12-13 | 2004-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-06-13 | 2007-12-13 | 2008-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-06-13 | 2011-12-13 | 2012-06-13 | $7700.00 | Window Closed / Lapsed |