US6060733A
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Formation of lightly doped regions under a gate having a reduced gate oxide
Assignee: GlobalFoundries Inc
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Filing: 1997-12-18
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Granted: 2000-05-09
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Expires: 2017-12-18
Abstract
Abstract The formation of lightly doped regions under a gate of a transistor that has a reduced gate oxide is disclosed. In one embodiment, a method includes four steps. In the first step, a gate is formed over a semiconductor substrate. In the second step, the gate oxide is etched to reduce the length of the gate oxide. In the third step, a first ion implantation is applied, at an angle other than perpendicular to the substrate. Finally, in the fourth step, a second ion implantation is applied, perpendicular to the substrate.
Inventors
- 👤 Mark I. Gardner
- 👤 H. James Fulford
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:32
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10P30/208; H10P30/21; H10P30/212; H10P30/222
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
94 words
A method for forming a semiconductor device comprising: forming a gate over a gate oxide over a semiconductor substrate, the gate and the gate oxide having respective lengths; etching the gate oxide to reduce the length of the gate oxide such that the length of the gate oxide is less than the length of the gate as measured linearly extending from an interface between the gate and the gate oxide; applying a first ion implantation at an angle other than perpendicular to the substrate; and applying a second ion implantation perpendicular to the substrate.
Claim 2
Independent Claim
94 words
A method for forming a semiconductor device comprising: forming a gate over a gate oxide over a semiconductor substrate, the gate and the gate oxide having respective lengths; etching the gate oxide to reduce the length of the gate oxide such that the length of the gate oxide is less than the length of the gate as measured linearly extending from an interface between the gate and the gate oxide; applying a first ion implantation at an angle other than perpendicular to the substrate; and applying a second ion implantation perpendicular to the substrate.
Claim 3
Dependent Claim
21 words
The method of claim 1, wherein applying the first ion implantation forms lightly doped regions within the substrate underneath the gate.
Claim 4
Dependent Claim
22 words
The method of claim 1, wherein applying the second ion implantation forms heavily doped regions within the substrate adjacent to the gate.
Claim 5
Dependent Claim
29 words
The method of claim 1, wherein the first ion implantation is applied at an angle from thirty to forty-five degrees as measured from an axis perpendicular to the substrate.
Claim 6
Dependent Claim
28 words
The method of claim 2, wherein the gate has a channel length, as measured within the substrate between the lightly doped regions, from 0.04 micron to 0.15 micron.
Claim 7
Dependent Claim
19 words
The method of claim 1, wherein the device has an L eff ultimately reduced by etching the gate oxide.
Claim 8
Dependent Claim
94 words
A semiconductor device comprising: a gate having a side extending over a gate oxide over a semiconductor substrate at an interface between the gate and the gate oxide, each of the gate and the gate oxide having respective lengths where the length of the gate oxide is less than the length of the gate as measured linearly extending from the interface between the gate and the gate oxide; at least one lightly doped region within the substrate underneath the gate; and at least one heavily doped region within the substrate adjacent to the gate.
Claim 9
Dependent Claim
94 words
A semiconductor device comprising: a gate having a side extending over a gate oxide over a semiconductor substrate at an interface between the gate and the gate oxide, each of the gate and the gate oxide having respective lengths where the length of the gate oxide is less than the length of the gate as measured linearly extending from the interface between the gate and the gate oxide; at least one lightly doped region within the substrate underneath the gate; and at least one heavily doped region within the substrate adjacent to the gate.
Claim 10
Dependent Claim
34 words
The device of claim 7, wherein the at least one lightly doped region is formed by etching the gate oxide and applying an ion implantation at an angle other than perpendicular to the substrate.
Claim 11
Dependent Claim
28 words
The device of claim 8, wherein the ion implantation is applied at an angle from thirty to forty-five degrees as measured from an axis perpendicular to the substrate.
Claim 12
Dependent Claim
19 words
The device of claim 8, wherein the device has an L eff ultimately reduced by etching the gate oxide.
Claim 13
Dependent Claim
24 words
The device of claim 8, wherein the at least one heavily doped region is formed by applying an ion implantation perpendicular to the substrate.
Claim 14
Dependent Claim
41 words
The device of claim 7, wherein the at least one lightly doped region comprises two lightly doped regions, and the gate has a channel length, as measured within the substrate between the lightly doped regions, from 0.04 micron to 0.15 micron.
Claim 15
Dependent Claim
103 words
A computerized system comprising at least one semiconductor device, each semiconductor device comprising: a gate having a side extending over a gate oxide over a semiconductor substrate at an interface between the gate and the gate oxide, each of the gate and the gate oxide having respective lengths where the length of the gate oxide is less than the length of the gate as measured linearly extending from the interface between the gate and the gate oxide; at least one lightly doped region within the substrate underneath the gate; and at least one heavily doped region within the substrate adjacent to the gate.
Claim 16
Dependent Claim
103 words
A computerized system comprising at least one semiconductor device, each semiconductor device comprising: a gate having a side extending over a gate oxide over a semiconductor substrate at an interface between the gate and the gate oxide, each of the gate and the gate oxide having respective lengths where the length of the gate oxide is less than the length of the gate as measured linearly extending from the interface between the gate and the gate oxide; at least one lightly doped region within the substrate underneath the gate; and at least one heavily doped region within the substrate adjacent to the gate.
Claim 17
Dependent Claim
37 words
The system of claim 13, wherein the at least one lightly doped region of each device is formed by etching the gate oxide and applying an ion implantation at an angle other than perpendicular to the substrate.
Claim 18
Dependent Claim
28 words
The system of claim 14, wherein the ion implantation is applied at an angle from thirty to forty-five degrees as measured from an axis perpendicular to the substrate.
Claim 19
Dependent Claim
19 words
The system of claim 14, wherein each device has an L eff ultimately reduced by etching the gate oxide.
Claim 20
Dependent Claim
27 words
The system of claim 13, wherein the at least one heavily doped region of each device is formed by applying an ion implantation perpendicular to the substrate.
Claim 21
Dependent Claim
44 words
The system of claim 13, wherein the at least one lightly doped region of each device comprises two lightly doped regions, and the gate has a channel length, as measured within the substrate between the lightly doped regions, from 0.04 micron to 0.15 micron.
References Cited (Backward Citations)
US5631485A
Cited
US5734185A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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