Liquid crystal display panel

Claim 2

A liquid crystal display panel comprising: a pixel portion formed over a substrate, said pixel portion including at least a switching element and a pixel electrode; a peripheral driver circuit formed over said substrate; a sealing member formed over said substrate, a part of said sealing member being formed over said peripheral driver circuit; at least a thin-film transistor formed in the peripheral driver circuit; and a protrusion formed in the peripheral driver circuit, said protrusion being a lamination of materials that constitute the thin-film transistor, wherein said protrusion is more projected than said thin-film transistor in the peripheral driving circuit.

Claim 3

A liquid crystal panel according to claim 1, wherein said peripheral driving circuit includes at least one selected from the group consisting of a shift register circuit, a buffer circuit, and a sampling circuit.

Claim 4

A liquid crystal panel according to claim 1, wherein the thin film transistor is a top-gate type.

Claim 5

The liquid crystal panel of claim 1, wherein said liquid crystal panel is used in one selected from the group consisting of a digital still camera, an electric camera, a video movie, a portable personal computer, a car navigation system, a projection image display apparatus, and a video camera.

Claim 6

A liquid crystal display panel comprising: an active matrix circuit on a substrate; a peripheral driver circuit on said substrate; a sealing member over said substrate, a part of said sealing member being formed above the peripheral driver circuit; at least a thin-film transistor formed in the peripheral driver circuit; and a protrusion formed in the peripheral driver circuit in addition to the thin-film transistor, said protrusion being a lamination of materials that constitute the thin-film transistor, wherein said protrusion is higher than a portion where the thin-film transistor is formed.

Claim 7

A liquid crystal display panel comprising: an active matrix circuit on a substrate; a peripheral driver circuit on said substrate; a sealing member over said substrate, a part of said sealing member being formed above the peripheral driver circuit; at least a thin-film transistor formed in the peripheral driver circuit; and a protrusion formed in the peripheral driver circuit in addition to the thin-film transistor, said protrusion being a lamination of materials that constitute the thin-film transistor, wherein said protrusion is higher than a portion where the thin-film transistor is formed.

Claim 8

A liquid crystal panel according to claim 5, wherein said peripheral driving circuit includes at least one selected from the group consisting of a shift register circuit, a buffer circuit, and a sampling circuit.

Claim 9

A liquid crystal panel according to claim 5, wherein the thin film transistor is a top-gate type.

Claim 10

The liquid crystal panel of claim 5, wherein said liquid crystal panel is used in one selected from the group consisting of a digital still camera, an electric camera, a video movie, a portable personal computer, a car navigation system, a projection image display apparatus, and a video camera.

Claim 11

A liquid crystal display panel comprising: an active matrix circuit on a substrate; a peripheral driver circuit on said substrate; a sealing member over said substrate, a part of the sealing member being disposed above the peripheral driver circuit; at least a thin-film transistor formed in the peripheral driver circuit; and a laminated portion formed in the peripheral driver circuit in addition to the thin-film transistor, said laminated portion having more laminated layers than a portion where the thin-film transistor is formed.

Claim 12

A liquid crystal display panel comprising: an active matrix circuit on a substrate; a peripheral driver circuit on said substrate; a sealing member over said substrate, a part of the sealing member being disposed above the peripheral driver circuit; at least a thin-film transistor formed in the peripheral driver circuit; and a laminated portion formed in the peripheral driver circuit in addition to the thin-film transistor, said laminated portion having more laminated layers than a portion where the thin-film transistor is formed.

Claim 13

A liquid crystal panel according to claim 9, wherein said peripheral driving circuit includes at least one selected from the group consisting of a shift register circuit, a buffer circuit, and a sampling circuit.

Claim 14

A liquid crystal panel according to claim 9, wherein the thin film transistor is a top-gate type.

Claim 15

The liquid crystal panel of claim 9, wherein said liquid crystal panel is used in one selected from the group consisting of a digital still camera, an electric camera, a video movie, a portable personal computer, a car navigation system, a projection image display apparatus, and a video camera.

Claim 16

A semiconductor device comprising: an active matrix circuit region on a substrate, said active matrix circuit region having at least a first thin film transistor, wherein said first thin film transistor comprises, a first semiconductor island over said substrate, said first semiconductor island having a first source and drain regions and a first channel region, a first gate electrode formed over said first semiconductor island having a gate insulating film therebetween, first source and drain electrodes contacting said first source and drain regions through a first interlayer insulating film, said first interlayer insulating film covering said first thin film transistor, a first pattern over at least said first gate electrode having said first interlayer insulating film and a second interlayer insulating film therebetween, a pixel electrode contacting said first drain electrode through a third interlayer insulating film; a peripheral driver circuit region on said substrate, said peripheral driver circuit region having a second thin film transistor and a laminated portion, wherein said second thin film transistor comprises, a second semiconductor island over said substrate, said second semiconductor island having a second source and drain regions and a second channel region, a second gate electrode formed over said second semiconductor island having said gate insulating film therebetween, second source and drain electrodes contacting said second source and drain regions through said first interlayer insulating film, said first interlayer insulating film covering said second thin film transistor, wherein said third interlayer insulating film is formed on said second interlayer insulating film formed on said second thin film transistor, and wherein said laminated portion comprises, a third semiconductor island over said substrate, a second pattern over said third semiconductor island having said gate insulating film therebetween, said second pattern being formed by a same material as said first gate electrode and said second gate electrode, a third pattern over said second pattern having said first interlayer insulating film, said third pattern being formed by a same material as said first source and drain electrodes and said second source and drain electrodes; a fourth pattern over said third pattern having said second interlayer insulating film therebetween, said fourth pattern being formed by a same material as said first pattern, a fifth pattern over said fourth pattern having said third interlayer insulating film therebetween, said fifth pattern being formed by a same material as said pixel electrode.

Claim 17

A semiconductor device comprising: an active matrix circuit region on a substrate, said active matrix circuit region having at least a first thin film transistor, wherein said first thin film transistor comprises, a first semiconductor island over said substrate, said first semiconductor island having a first source and drain regions and a first channel region, a first gate electrode formed over said first semiconductor island having a gate insulating film therebetween, first source and drain electrodes contacting said first source and drain regions through a first interlayer insulating film, said first interlayer insulating film covering said first thin film transistor, a first pattern over at least said first gate electrode having said first interlayer insulating film and a second interlayer insulating film therebetween, a pixel electrode contacting said first drain electrode through a third interlayer insulating film; a peripheral driver circuit region on said substrate, said peripheral driver circuit region having a second thin film transistor and a laminated portion, wherein said second thin film transistor comprises, a second semiconductor island over said substrate, said second semiconductor island having a second source and drain regions and a second channel region, a second gate electrode formed over said second semiconductor island having said gate insulating film therebetween, second source and drain electrodes contacting said second source and drain regions through said first interlayer insulating film, said first interlayer insulating film covering said second thin film transistor, wherein said third interlayer insulating film is formed on said second interlayer insulating film formed on said second thin film transistor, and wherein said laminated portion comprises, a third semiconductor island over said substrate, a second pattern over said third semiconductor island having said gate insulating film therebetween, said second pattern being formed by a same material as said first gate electrode and said second gate electrode, a third pattern over said second pattern having said first interlayer insulating film, said third pattern being formed by a same material as said first source and drain electrodes and said second source and drain electrodes; a fourth pattern over said third pattern having said second interlayer insulating film therebetween, said fourth pattern being formed by a same material as said first pattern, a fifth pattern over said fourth pattern having said third interlayer insulating film therebetween, said fifth pattern being formed by a same material as said pixel electrode.

Claim 18

A device according to claim 13, wherein said peripheral driving circuit region includes at least one selected from the group consisting of a shift register circuit, a buffer circuit, and a sampling circuit.

Claim 19

A device according to claim 13, wherein each of the first and second thin film transistors is a top-gate type.

Claim 20

A device according to claim 13, wherein said semiconductor device is one selected from the group consisting of a digital still camera, an electric camera, a video movie, a portable personal computer, a car navigation system, a projection image display apparatus, and a video camera.

Claim 21

A semiconductor device including at least a liquid crystal display panel comprising: a pixel portion formed over a substrate, said pixel portion including at least a switching element and a pixel electrode; a peripheral driver circuit formed over said substrate; a sealing member formed over said substrate, a part of said sealing member being formed over the peripheral driver circuit; at least a thin film transistor formed in the peripheral driver circuit; and a protrusion formed in the peripheral driver circuit in addition to the thin film transistor, said protrusion including a lamination of materials that constitute the thin film transistor, wherein said protrusion is higher than the thin film transistor.

Claim 22

A semiconductor device including at least a liquid crystal display panel comprising: a pixel portion formed over a substrate, said pixel portion including at least a switching element and a pixel electrode; a peripheral driver circuit formed over said substrate; a sealing member formed over said substrate, a part of said sealing member being formed over the peripheral driver circuit; at least a thin film transistor formed in the peripheral driver circuit; and a protrusion formed in the peripheral driver circuit in addition to the thin film transistor, said protrusion including a lamination of materials that constitute the thin film transistor, wherein said protrusion is higher than the thin film transistor.

Claim 23

A device according to claim 17, wherein said peripheral driving circuit includes at least one selected from the group consisting of a shift register circuit, a buffer circuit, and a sampling circuit.

Claim 24

A device according to claim 17, wherein the thin film transistor is a top-gate type.

Claim 25

A device according to claim 17, wherein said semiconductor device is one selected from the group consisting of a digital still camera, an electric camera, a video movie, a portable personal computer, a car navigation system, a projection image display apparatus, and a video camera.

Claim 26

A semiconductor device including at least a liquid crystal display panel comprising: a pixel portion formed over a substrate, said pixel portion including at least a switching element and a pixel electrode; a peripheral driver circuit formed over said substrate; a sealing member over said substrate, a part of the sealing member being disposed over the peripheral driver circuit; at least a thin film transistor formed in the peripheral driver circuit; and a laminated portion formed in the peripheral driver circuit in addition to the thin film transistor, said laminated portion having more laminated layers than the thin film transistor.

Claim 27

A semiconductor device including at least a liquid crystal display panel comprising: a pixel portion formed over a substrate, said pixel portion including at least a switching element and a pixel electrode; a peripheral driver circuit formed over said substrate; a sealing member over said substrate, a part of the sealing member being disposed over the peripheral driver circuit; at least a thin film transistor formed in the peripheral driver circuit; and a laminated portion formed in the peripheral driver circuit in addition to the thin film transistor, said laminated portion having more laminated layers than the thin film transistor.

Claim 28

A device according to claim 21, wherein said peripheral driving circuit includes at least one selected from the group consisting of a shift register circuit, a buffer circuit, and a sampling circuit.

Claim 29

A device according to claim 21, wherein the thin film transistor is a top-gate type.

Claim 30

A device according to claim 21, wherein said semiconductor device is one selected from the group consisting of a digital still camera, an electric camera, a video movie, a portable personal computer, a car navigation system, a projection image display apparatus, and a video camera.