US6054882A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Charge pump circuit
Assignee: NEC Corp
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Filing: 1998-09-03
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Granted: 2000-04-25
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Expires: 2018-09-03
Abstract
Abstract A charge pump circuit includes a charge pump which includes a first series connection of at least a first conductivity type field effect transistor between a high voltage line and an intermediate point connected to an output terminal; and a second series connection of at least a second conductivity type field effect transistor between a low voltage line and the intermediate point; a replica circuit which includes a third series connection of at least a first conductivity type field effect transistor between the high voltage line and the intermediate point; and a fourth series connection of at least a second conductivity type field effect transistor between the low voltage line and the intermediate point, the replica circuit has substantially the same circuit configuration and characteristics as the charge pump; and a control circuit connected to the charge pump and the replica circuit for controlling the charge pump and the replica circuit, so that an output voltage level of the replica circuit is equal to an output voltage level of the charge pump.
Inventors
- 👤 Masanori Izumikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:17
CPC Classifications
H; H03; H03L; H03L7/00; H03L7/06; H03L7/08; H03L7/085; H03L7/089; H03L7/0891; H03L7/0895
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
235 words
A charge pump circuit comprising: an output terminal; a charge pump comprising: a first series connection of at least a first conductivity type field charge pump effect transistor between a high voltage line and an intermediate point connected to said output terminal; and a second series connection of at least a second conductivity type charge pump field effect transistor between a low voltage line and said intermediate point; a replica circuit comprising a third series connection of at least a first conductivity type replica circuit field effect transistor between said high voltage line and a second intermediate point; and a fourth series connection of at least a second conductivity type replica circuit field effect transistor between said low voltage line and said second intermediate point, and said replica circuit having substantially the same circuit configuration and characteristics as said charge pump; and a control circuit connected to said charge pump and said replica circuit for controlling said charge pump and said replica circuit so that an output voltage level of said replica circuit is equal to an output voltage level of said charge pump, wherein said control circuit comprises: an operational amplifier having two input terminals connected to output terminals of said replica circuit at said second intermediate point and said charge pump; and a voltage application means for applying an output voltage from said operational amplifier to an input side of said charge pump.
Claim 2
Dependent Claim
235 words
A charge pump circuit comprising: an output terminal; a charge pump comprising: a first series connection of at least a first conductivity type field charge pump effect transistor between a high voltage line and an intermediate point connected to said output terminal; and a second series connection of at least a second conductivity type charge pump field effect transistor between a low voltage line and said intermediate point; a replica circuit comprising a third series connection of at least a first conductivity type replica circuit field effect transistor between said high voltage line and a second intermediate point; and a fourth series connection of at least a second conductivity type replica circuit field effect transistor between said low voltage line and said second intermediate point, and said replica circuit having substantially the same circuit configuration and characteristics as said charge pump; and a control circuit connected to said charge pump and said replica circuit for controlling said charge pump and said replica circuit so that an output voltage level of said replica circuit is equal to an output voltage level of said charge pump, wherein said control circuit comprises: an operational amplifier having two input terminals connected to output terminals of said replica circuit at said second intermediate point and said charge pump; and a voltage application means for applying an output voltage from said operational amplifier to an input side of said charge pump.
Claim 3
Dependent Claim
33 words
The charge pump circuit as claimed in claim 1, wherein said voltage application means comprises a selector circuit connected between said operational amplifier and each of said replica circuit and said charge pump.
Claim 4
Dependent Claim
94 words
The charge pump circuit as claimed in claim 2, wherein said first series connection comprises a single charge pump first conductivity type field effect transistor; wherein said second series connection comprises a single charge pump second conductivity type field effect transistor; wherein said third series connection comprises a single replica circuit first conductivity type field effect transistor between said high voltage line and said second intermediate point; and wherein the fourth series connection comprises a single second replica circuit conductivity type field effect transistor between said low voltage line and said second intermediate point.
Claim 5
Dependent Claim
32 words
The charge pump circuit as claimed in claim 1, wherein said voltage application means comprises an electrical connection between said operational amplifier and each of said replica circuit and said charge pump.
Claim 6
Dependent Claim
98 words
The charge pump circuit as claimed in claim 4, wherein said first series connection comprises a plurality of first conductivity type charge pump field effect transistors; wherein said second series connection comprises a plurality of second conductivity type charge pump field effect transistors; wherein said third series connection comprises a plurality of first conductivity type replica circuit field effect transistors between said high voltage line and said second intermediate point; and wherein the fourth series connection comprises a plurality of second conductivity type field replica circuit effect transistors between said low voltage line and said second intermediate point.
Claim 7
Dependent Claim
227 words
A charge pump circuit comprising: an output terminal; a charge pump comprising: a first series connection of at least a first conductivity type field charge pump effect transistor between a high voltage line and an intermediate point connected to said output terminal; and a second series connection of at least a second conductivity type charge pump field effect transistor between a low voltage line and said intermediate point; a replica circuit comprising a third series connection of at least a first conductivity type replica circuit field effect transistor between said high voltage line and a second intermediate point; and a fourth series connection of at least a second conductivity type replica circuit field effect transistor between said low voltage line and said second intermediate point, and said replica circuit having substantially the same circuit configuration and characteristics as said charge pump; and a control circuit connected to said charge pump and said replica circuit for controlling said charge pump and said replica circuit so that an output voltage level of said replica circuit is equal to an output voltage level of said charge pump, wherein an UP-bar signal of low level is operatively connected to a gate electrode of said first conductivity type charge pump field-effect transistor and a gate of said first conductivity type replica circuit field effect transistor is connected to a low voltage line.
Claim 8
Dependent Claim
227 words
A charge pump circuit comprising: an output terminal; a charge pump comprising: a first series connection of at least a first conductivity type field charge pump effect transistor between a high voltage line and an intermediate point connected to said output terminal; and a second series connection of at least a second conductivity type charge pump field effect transistor between a low voltage line and said intermediate point; a replica circuit comprising a third series connection of at least a first conductivity type replica circuit field effect transistor between said high voltage line and a second intermediate point; and a fourth series connection of at least a second conductivity type replica circuit field effect transistor between said low voltage line and said second intermediate point, and said replica circuit having substantially the same circuit configuration and characteristics as said charge pump; and a control circuit connected to said charge pump and said replica circuit for controlling said charge pump and said replica circuit so that an output voltage level of said replica circuit is equal to an output voltage level of said charge pump, wherein an UP-bar signal of low level is operatively connected to a gate electrode of said first conductivity type charge pump field-effect transistor and a gate of said first conductivity type replica circuit field effect transistor is connected to a low voltage line.
Claim 9
Dependent Claim
60 words
The charge pump circuit as claimed in claim 6, wherein said control circuit comprises: an operational amplifier having two input terminals connected to output terminals of said replica circuit at said second intermediate point and said charge pump; and a voltage application means for applying an output voltage from said operational amplifier to an input side of said charge pump.
Claim 10
Dependent Claim
33 words
The charge pump circuit as claimed in claim 7, wherein said voltage application means comprises a selector circuit connected between said operational amplifier and each of said replica circuit and said charge pump.
Claim 11
Dependent Claim
94 words
The charge pump circuit as claimed in claim 8, wherein said first series connection comprises a single charge pump first conductivity type field effect transistor; wherein said second series connection comprises a single charge pump second conductivity type field effect transistor; wherein said third series connection comprises a single replica circuit first conductivity type field effect transistor between said high voltage line and said second intermediate point; and wherein the fourth series connection comprises a single second replica circuit conductivity type field effect transistor between said low voltage line and said second intermediate point.
Claim 12
Dependent Claim
32 words
The charge pump circuit as claimed in claim 6, wherein said voltage application means comprises an electrical connection between said operational amplifier and each of said replica circuit and said charge pump.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-04-25 | 2003-10-25 | 2004-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-04-25 | 2007-10-25 | 2008-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-04-25 | 2011-10-25 | 2012-04-25 | $7700.00 | Window Closed / Lapsed |