US6046502A
Expired / Lapsed
US
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Semiconductor device with improved adhesion between titanium-based metal layer and insulation film
Assignee: Toshiba Corp
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Filing: 1997-11-13
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Granted: 2000-04-04
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Expires: 2017-11-13
Abstract
Abstract A semiconductor device includes a substrate, an insulation film formed above the substrate and containing silicon-fluorine bonds, and a titanium-based metal wiring layer formed on the insulation film, the titanium-based metal wiring layer containing fluorine which is diffused from the insulation film and has a fluorine concentration of less than 1x1020 atoms/cm3.
Inventors
- 👤 Tadashi Matsuno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 11:37
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6924; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6536; H10P14/66; H10P14/662; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; H10W20/45; H10W20/48; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P95/00; H10W20/071; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
109 words
A semiconductor device, comprising: a substrate having a first region and a second region; an insulation film formed on said substrate and containing silicon-fluorine bonds; a titanium-based metal wiring layer formed on said insulation film, said titanium-based metal wiring layer containing fluorine diffused from said insulation film and having a first fluorine concentration of less than 1×10 20 atoms/cm 3 on said first region and a second fluorine concentration of at least 1×10 20 atoms/cm 3 on said second region, at an interface with said insulation film, respectively, wherein only said titanium-based metal wiring layer on said first region of said substrate is used for a wire bonding pad.
Claim 2
Dependent Claim
109 words
A semiconductor device, comprising: a substrate having a first region and a second region; an insulation film formed on said substrate and containing silicon-fluorine bonds; a titanium-based metal wiring layer formed on said insulation film, said titanium-based metal wiring layer containing fluorine diffused from said insulation film and having a first fluorine concentration of less than 1×10 20 atoms/cm 3 on said first region and a second fluorine concentration of at least 1×10 20 atoms/cm 3 on said second region, at an interface with said insulation film, respectively, wherein only said titanium-based metal wiring layer on said first region of said substrate is used for a wire bonding pad.
Claim 3
Dependent Claim
23 words
The semiconductor device of claim 1, including a fluorine diffusion suppression film formed in said insulation film immediately below said wire bonding pad.
Claim 4
Dependent Claim
32 words
The semiconductor device of claim 1, wherein a first thickness of said insulation film on said first region is less than a second thickness of said insulation film on said second region.
Claim 5
Dependent Claim
196 words
A semiconductor device, comprising: a substrate having a first region and a second region; an insulation film formed on said substrate and containing silicon-fluorine bonds; a titanium-based metal wiring layer formed on said insulation film; and a reaction layer formed between said insulation film and said titanium-based metal wiring layer and containing at least titanium, silicon, and oxygen, wherein only said titanium-based metal wiring layer on said first region of said substrate is used for a wire bonding pad and said reaction layer on said first region has, at least on a central portion of said reaction layer in a direction of film thickness, a first central region having ratios of a first titanium concentration to a first silicon concentration and of said first titanium concentration to a first oxygen concentration of not more than 1, respectively, and wherein said reaction layer on said second region has, at least on the central portion of said reaction layer in the direction of film thickness, a second central region in which ratios of a second titanium concentration to a second silicon concentration and of said second titanium concentration to a second oxygen concentration are more than 1, respectively.
Claim 6
Dependent Claim
196 words
A semiconductor device, comprising: a substrate having a first region and a second region; an insulation film formed on said substrate and containing silicon-fluorine bonds; a titanium-based metal wiring layer formed on said insulation film; and a reaction layer formed between said insulation film and said titanium-based metal wiring layer and containing at least titanium, silicon, and oxygen, wherein only said titanium-based metal wiring layer on said first region of said substrate is used for a wire bonding pad and said reaction layer on said first region has, at least on a central portion of said reaction layer in a direction of film thickness, a first central region having ratios of a first titanium concentration to a first silicon concentration and of said first titanium concentration to a first oxygen concentration of not more than 1, respectively, and wherein said reaction layer on said second region has, at least on the central portion of said reaction layer in the direction of film thickness, a second central region in which ratios of a second titanium concentration to a second silicon concentration and of said second titanium concentration to a second oxygen concentration are more than 1, respectively.
Claim 7
Dependent Claim
109 words
A semiconductor device, comprising: a substrate having a first region and a second region; an insulation film formed on said substrate and containing silicon-fluorine bonds; a titanium-based metal wiring layer formed on said insulation film; and a reaction layer formed between said insulation film and said titanium-based metal wiring layer and containing at least titanium, silicon, and oxygen, wherein only said titanium-based metal wiring layer on said first region of said substrate is used for a wire bonding pad, and a first average film thickness of said reaction layer on said first region is smaller than a second average film thickness of said reaction layer on said second region.
Claim 8
Dependent Claim
109 words
A semiconductor device, comprising: a substrate having a first region and a second region; an insulation film formed on said substrate and containing silicon-fluorine bonds; a titanium-based metal wiring layer formed on said insulation film; and a reaction layer formed between said insulation film and said titanium-based metal wiring layer and containing at least titanium, silicon, and oxygen, wherein only said titanium-based metal wiring layer on said first region of said substrate is used for a wire bonding pad, and a first average film thickness of said reaction layer on said first region is smaller than a second average film thickness of said reaction layer on said second region.
Claim 9
Dependent Claim
43 words
The semiconductor device of claim 5, wherein said first average thickness of said reaction layer on said first region is not more than 3.5 nm, and said second average thickness of said reaction layer on said second region is more than 3.5 nm.
Claim 10
Dependent Claim
108 words
The semiconductor device of claim 5, wherein ratios of a first titanium concentration to a first silicon concentration and of said first titanium concentration to a first oxygen concentration of said reaction layer at a first central portion of said reaction layer in a film thickness direction on said first region are not more than 1, respectively, and wherein ratios of a second titanium concentration to a second silicon concentration and of said second titanium concentration to a second oxygen concentration of said reaction layer at a second central portion of said reaction layer in the film thickness direction on said second region are more than 1, respectively.
Claim 11
Dependent Claim
52 words
The semiconductor device of claim 5, wherein a first fluorine concentration of said titanium-based metal wiring layer on said first region is less than 1×10 20 atoms/cm 3 , and a second fluorine concentration of said titanium-based metal wiring layer on said second region is at least 1×10 20 atoms/cm 3 .
Claim 12
Dependent Claim
154 words
The semiconductor device of claim 5, wherein ratios of a first titanium concentration to a first silicon concentration and of said first titanium concentration to a first oxygen concentration of said reaction layer at a first central portion of said reaction layer in a film thickness direction on said first region are not more than 1, respectively, and ratios of a second titanium concentration to a second silicon concentration and of the second titanium concentration to a second oxygen concentration of said reaction layer at a second central portion of said reaction layer in the film thickness direction on said second region are more than 1, respectively, and wherein a first fluorine concentration of said titanium-based metal wiring layer on said first region is less than 1×10 20 atoms/cm 3 , and a second fluorine concentration of said titanium-based metal wiring layer on said second region is at least 1×10 20 atoms/cm 3 .
References Cited (Backward Citations)
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