US6043714A
Expired / Lapsed
US
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Power amplifier incorporating heterojunction and silicon bipolar transistors
Assignee: Murata Manufacturing Co Ltd
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Filing: 1998-03-23
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Granted: 2000-03-28
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Expires: 2018-03-23
Abstract
Abstract A power amplifier including an amplifier stage including a heterojunction bipolar transistor for signal amplification having a base electrode connected to an RF signal input terminal, and a grounded emitter electrode; and a bias circuit including a silicon bipolar transistor having a base electrode connected to a power supply terminal, and a terminal from which a current amplified in response to a base current is output, which terminal is connected to the base electrode of the heterojunction bipolar transistor stage. In this power amplifier, since the voltage required for operating the bias circuit is reduced, a power amplifier capable of operating at a low voltage is realized.
Inventors
- 👤 Kazuya Yamamoto
- 👤 Yukio Miyazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 13:07
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/20; H03F1/00; H03F1/30; H03F3/189; H03F3/19; H03F2200/00; H03F2200/447; H03F2200/513
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
170 words
A power amplifier comprising: an amplifier stage including a first heterojunction bipolar transistor for signal amplification, having a first conductivity type, a base electrode connected to an RF signal input terminal, and a grounded emitter; and a bias circuit including: a first silicon bipolar transistor having a second conductivity type, and an emitter electrode connected to the power supply terminal; and a second heterojunction bipolar transistor having the first conductivity type, a grounded emitter electrode, a base electrode connected to said base electrode of said first heterojunction bipolar transistor, and a collector electrode connected to said base electrode of said second heterojunction bipolar transistor and to a collector electrode of said first silicon bipolar transistor, and a second silicon bipolar transistor having the second conductivity type, an emitter electrode connected to the power supply terminal, a collector electrode connected to a constant current source, and a base electrode connected to said base electrode of said first silicon bipolar transistor and to said collector electrode of said second silicon bipolar transistor.
Claim 2
Dependent Claim
170 words
A power amplifier comprising: an amplifier stage including a first heterojunction bipolar transistor for signal amplification, having a first conductivity type, a base electrode connected to an RF signal input terminal, and a grounded emitter; and a bias circuit including: a first silicon bipolar transistor having a second conductivity type, and an emitter electrode connected to the power supply terminal; and a second heterojunction bipolar transistor having the first conductivity type, a grounded emitter electrode, a base electrode connected to said base electrode of said first heterojunction bipolar transistor, and a collector electrode connected to said base electrode of said second heterojunction bipolar transistor and to a collector electrode of said first silicon bipolar transistor, and a second silicon bipolar transistor having the second conductivity type, an emitter electrode connected to the power supply terminal, a collector electrode connected to a constant current source, and a base electrode connected to said base electrode of said first silicon bipolar transistor and to said collector electrode of said second silicon bipolar transistor.
Claim 3
Dependent Claim
23 words
The power amplifier of claim 1 wherein said constant current source has a current characteristic so that output current is proportional to temperature.
Claim 4
Dependent Claim
28 words
The power amplifier of claim 1 wherein said constant current source has a temperature characteristic so that output current does not change in response to changes in temperature.
Claim 5
Dependent Claim
61 words
The power amplifier of claim 1 wherein said bias circuit further comprises a third silicon bipolar transistor of the first conductivity type having an emitter electrode connected to said base electrode of said second heterojunction bipolar transistor, a base electrode connected to said collector electrode of said second heterojunction bipolar transistor, and a collector electrode connected to said power supply terminal.
Claim 6
Dependent Claim
19 words
The power amplifier of claim 1 wherein the first and second heterojunction transistors are compound semiconductor heterojunction bipolar transistors.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-28 | 2003-09-27 | 2004-03-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-28 | 2007-09-27 | 2008-03-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-28 | 2011-09-27 | 2012-03-28 | $7700.00 | Window Closed / Lapsed |