US6037255A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for making integrated circuit having polymer interlayer dielectric
Assignee: Intel Corp
•
Filing: 1999-05-12
•
Granted: 2000-03-14
•
Expires: 2019-05-12
Abstract
Abstract An improved method for making an integrated circuit that includes forming a conductive layer on a substrate, then forming a dielectric layer comprising a polymer on the conductive layer. After forming the dielectric layer, a layer of photoresist is patterned to define a region to be etched. An etched region is then formed through the dielectric layer while simultaneously removing the layer of photoresist.
Inventors
- 👤 Makarem A. Hussein
- 👤 Sam Sivakumar
- 👤 Rick Davis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 14:22
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/68; H10P14/683
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
63 words
A method of forming an integrated circuit comprising: forming a conductive layer on a substrate; then forming a dielectric layer comprising a polymer on the conductive layer; patterning a layer of photoresist, after forming the dielectric layer, to define a region to be etched; and forming an etched region through the dielectric layer while simultaneously removing substantially all of the layer of photoresist.
Claim 2
Independent Claim
63 words
A method of forming an integrated circuit comprising: forming a conductive layer on a substrate; then forming a dielectric layer comprising a polymer on the conductive layer; patterning a layer of photoresist, after forming the dielectric layer, to define a region to be etched; and forming an etched region through the dielectric layer while simultaneously removing substantially all of the layer of photoresist.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein a plasma that comprises nitrogen and either hydrogen or oxygen is used to remove the entire layer of photoresist when forming the etched region.
Claim 4
Dependent Claim
45 words
The method of claim 2 further comprising: forming a barrier layer on the surface of the conductive layer prior to forming the dielectric layer; removing part of the barrier layer after forming the etched region; and filling the etched region with a second conductive layer.
Claim 5
Dependent Claim
42 words
The method of claim 2 further comprising: forming a hard masking layer on the surface of the dielectric layer; removing part of the hard masking layer prior to forming the etched region; and filling the etched region with a second conductive layer.
Claim 6
Dependent Claim
24 words
The method of claim 2 wherein the polymer is selected from the group consisting of polyimides, parylenes, polyarylethers, polynaphthalenes, and polyquinolines, or copolymers thereof.
Claim 7
Independent Claim
164 words
A method of forming an integrated circuit comprising: forming a first conductive layer on a substrate; forming a barrier layer on the surface of the first conductive layer; forming a dielectric layer comprising a polymer on the surface of the barrier layer; forming a hard masking layer on the surface of the dielectric layer; patterning a first layer of photoresist, after forming the hard masking layer, to define a first etched region; removing a first part of the hard masking layer; forming a first etched region through the dielectric layer while simultaneously removing substantially all of the first layer of photoresist; patterning a second layer of photoresist, after forming the first etched region, to define a second etched region; removing a second part of the hard masking layer; forming a second etched region within the dielectric layer while simultaneously removing substantially all of the second layer of photoresist; and filling the first etched region and the second etched region with a second conductive layer.
Claim 8
Independent Claim
164 words
A method of forming an integrated circuit comprising: forming a first conductive layer on a substrate; forming a barrier layer on the surface of the first conductive layer; forming a dielectric layer comprising a polymer on the surface of the barrier layer; forming a hard masking layer on the surface of the dielectric layer; patterning a first layer of photoresist, after forming the hard masking layer, to define a first etched region; removing a first part of the hard masking layer; forming a first etched region through the dielectric layer while simultaneously removing substantially all of the first layer of photoresist; patterning a second layer of photoresist, after forming the first etched region, to define a second etched region; removing a second part of the hard masking layer; forming a second etched region within the dielectric layer while simultaneously removing substantially all of the second layer of photoresist; and filling the first etched region and the second etched region with a second conductive layer.
Claim 9
Dependent Claim
78 words
The method of claim 6 wherein the first part of the hard masking layer is removed using an anisotropic dry etch that has a higher selectivity for the hard masking layer than for the polymer and further comprising removing part of the barrier layer when the second part of the hard masking layer is removed using an anisotropic dry etch that has a higher selectivity for the hard masking layer and the barrier layer than for the polymer.
Claim 10
Dependent Claim
56 words
The method of claim 7 wherein a plasma that comprises nitrogen and either hydrogen or oxygen is used to etch the first layer of photoresist and the first etched region simultaneously and a plasma containing nitrogen and either hydrogen or oxygen is used to etch the second layer of photoresist and the second etched region simultaneously.
Claim 11
Dependent Claim
35 words
The method of claim 8 wherein the entire first layer of photoresist is removed when etching the first etched region; and the entire second layer of photoresist is removed when etching the second etched region.
Claim 12
Dependent Claim
23 words
The method of claim 6 further comprising removing part of the barrier layer after removing the second part of the hard masking layer.
Claim 13
Dependent Claim
50 words
The method of claim 10 wherein the first conductive layer and the second conductive layer each comprise copper, the barrier layer comprises silicon nitride, the hard masking layer comprises silicon dioxide, and the polymer is selected from the group consisting of polyimides, parylenes, polyarylethers, polynaphthalenes, and polyquinolines, or copolymers thereof.
Claim 14
Independent Claim
214 words
A method of forming an integrated circuit comprising: forming a first conductive layer on a substrate; forming a barrier layer on the surface of the first conductive layer; forming a dielectric layer comprising a polymer on the surface of the barrier layer; forming a hard masking layer on the surface of the dielectric layer; patterning a first layer of photoresist, after forming the hard masking layer, to define a first etched region; removing a first part of the hard masking layer using an anisotropic dry etch that has a higher selectivity for the hard masking layer than for the polymer; forming a first etched region through the dielectric layer while simultaneously removing substantially all of the first layer of photoresist; patterning a second layer of photoresist, after forming the first etched region, to define a second etched region; removing a second part of the hard masking layer simultaneously with removing part of the barrier layer using an anisotropic dry etch that has a higher selectivity for the hard masking layer and the barrier layer than for the polymer; forming a second etched region within the dielectric layer while simultaneously removing substantially all of the second layer of photoresist; and filling the first etched region and the second etched region with a second conductive layer.
Claim 15
Independent Claim
214 words
A method of forming an integrated circuit comprising: forming a first conductive layer on a substrate; forming a barrier layer on the surface of the first conductive layer; forming a dielectric layer comprising a polymer on the surface of the barrier layer; forming a hard masking layer on the surface of the dielectric layer; patterning a first layer of photoresist, after forming the hard masking layer, to define a first etched region; removing a first part of the hard masking layer using an anisotropic dry etch that has a higher selectivity for the hard masking layer than for the polymer; forming a first etched region through the dielectric layer while simultaneously removing substantially all of the first layer of photoresist; patterning a second layer of photoresist, after forming the first etched region, to define a second etched region; removing a second part of the hard masking layer simultaneously with removing part of the barrier layer using an anisotropic dry etch that has a higher selectivity for the hard masking layer and the barrier layer than for the polymer; forming a second etched region within the dielectric layer while simultaneously removing substantially all of the second layer of photoresist; and filling the first etched region and the second etched region with a second conductive layer.
Claim 16
Dependent Claim
59 words
The method of claim 12 wherein a plasma that comprises nitrogen and either hydrogen or oxygen is used to remove the entire first layer of photoresist when etching the first etched region, and a plasma that comprises nitrogen and either hydrogen or oxygen is used to remove the entire second layer of photoresist when etching the second etched region.
Claim 17
Dependent Claim
49 words
The method of claim 13 wherein the first conductive layer and the second conductive layer each comprise copper, the barrier layer and the hard masking layer each comprise silicon nitride, and the polymer is selected from the group consisting of polyimides, parylenes, polyarylethers, polynaphthalenes, and polyquinolines, or copolymers thereof.
Claim 18
Dependent Claim
24 words
The method of claim 12, wherein the thickness of the barrier layer is less than about 10% of the thickness of the dielectric layer.
References Cited (Backward Citations)
US5354712A
Cited
US5889141A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-14 | 2003-09-13 | 2004-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-14 | 2007-09-13 | 2008-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-14 | 2011-09-13 | 2012-03-14 | $7700.00 | Window Closed / Lapsed |