Thin film transistor, having a nitride film on the gate insulation layer and an organic resin interlayer film on the transistor

Claim 2

A semiconductor device comprising: a thin film transistor being formed over a substrate, said thin film transistor including: an active layer including a source region, a drain region and a channel region formed between the source and drain regions; a gate insulating film comprising silicon oxide and covering the active layer; and a gate electrode formed on the gate insulating film; a silicon nitride film formed in direct contact with the gate insulating film; a leveling film comprising organic resin formed in direct contact with the silicon nitride film; a source electrode formed in contact with the leveling film and the source region in the active layer through the gate insulating film, the silicon nitride film and the leveling film; a drain electrode formed in contact with the leveling film and the drain region in the active layer through the gate insulating film the silicon nitride film and the leveling film; wherein the active layer is oxidized using the gate electrode as a mask.

Claim 3

A device according to claim 1, wherein an upper end portion of the channel region formed in the active layer is selectively oxidized.

Claim 4

A device according to claim 1, wherein a thickness of the gate insulating film in a portion under a side of the gate electrode is gradually changed toward the source and drain regions.

Claim 5

A device according to claim 1, wherein a thickness of the thinnest portion of the gate insulating film in a portion under the gate electrode is thinner than a thickness of the thickest portion of the gate insulating film in a portion other than the portion under the gate electrode.

Claim 6

A device according to claim 1 further comprising offset regions formed between the channel region and each of the source and drain regions of the active layer, wherein a thickness of the gate insulating film in the offset regions gradually become thicker in a direction from portions where the offset regions are formed to the source and drain regions.

Claim 7

A device according to claim 1, wherein a thickness of the gate insulating film gradually becomes thicker in a portion under the gate electrode toward the source and drain regions.

Claim 8

A device according to claim 1, wherein the gate electrode comprises a material which is able to be anodized and to withstand a thermal oxidation step.

Claim 9

A device according to claim 1, wherein the gate electrode comprises tantalum, and wherein an anodic oxidation film is formed on the surface of the gate electrode.

Claim 10

A device according to claim 1, wherein said semiconductor device is one selected from the group consisting of a portable information processing terminal, a head mount display device, a front projection type liquid crystal display device, a portable telephone, a portable video camera and a rear projection type liquid crystal display device.

Claim 11

A device according to claim 1, wherein said organic resin includes at least one selected from the group consisting of acryl, polyimide, polyamide, polyimide amide, and epoxy.

Claim 12

A semiconductor device comprising; a thin film transistor being formed over a substrate said thin film transistor including: an active layer including a source region, a drain region and a channel region formed between the source and drain regions; a silicon oxide film covering the active layer; and a gate electrode formed on the silicon oxide film a silicon nitride film formed in direct contact with the silicon oxide film; a leveling film comprising organic resin formed in direct contact with the silicon nitride film; a source electrode formed in contact with the leveling film and the source region in the active layer through the silicon oxide film, the silicon nitride film and the leveling film; a drain electrode formed in contact with the leveling film and the drain region in the active layer through the silicon oxide film, the silicon nitride film and the leveling film; wherein said silicon oxide film is thermally oxidized using the gate electrode as a mask to thicken a thickness of the silicon oxide film, wherein an end of the thermally oxidized region extends to a portion under the gate electrode.

Claim 13

A semiconductor device comprising; a thin film transistor being formed over a substrate said thin film transistor including: an active layer including a source region, a drain region and a channel region formed between the source and drain regions; a silicon oxide film covering the active layer; and a gate electrode formed on the silicon oxide film a silicon nitride film formed in direct contact with the silicon oxide film; a leveling film comprising organic resin formed in direct contact with the silicon nitride film; a source electrode formed in contact with the leveling film and the source region in the active layer through the silicon oxide film, the silicon nitride film and the leveling film; a drain electrode formed in contact with the leveling film and the drain region in the active layer through the silicon oxide film, the silicon nitride film and the leveling film; wherein said silicon oxide film is thermally oxidized using the gate electrode as a mask to thicken a thickness of the silicon oxide film, wherein an end of the thermally oxidized region extends to a portion under the gate electrode.

Claim 14

A device according to claim 11, wherein an upper end portion of the channel region is selectively oxidized.

Claim 15

A device according to claim 11, wherein a thickness of the silicon oxide film at an upper end portion of the channel region gradually becomes thicker toward the source and drain regions.

Claim 16

A device according to claim 11, wherein said semiconductor device is one selected from the group consisting of a portable information processing terminal, a head mount display device, a front projection type liquid crystal display device, a portable telephone, a portable video camera and a rear projection type liquid crystal display device.

Claim 17

A device according to claim 11, wherein said organic resin includes at least one selected from the group consisting of acryl, polyimide, polyamide, polyimide amide, and epoxy.

Claim 18

A semiconductor device including: at least one thin film transistor, said thin film transistor comprising: a semiconductor layer formed on an insulating surface; source, drain and channel regions formed in said semiconductor layer; a gate insulating film covering said semiconductor layer; and a gate electrode formed on said gate insulating film, said gate electrode comprising tantalum; a silicon nitride film formed in direct contact with the gate insulating film; a leveling film comprising organic resin formed in direct contact with the silicon nitride film; a source electrode formed in contact with the leveling film and the source region in the active layer through the gate insulating film, the silicon nitride film and the leveling film; a drain electrode formed in contact with the leveling film and the drain region in the active layer through the gate insulating film, the silicon nitride film and the leveling film; wherein a thickness of said gate insulating film at each boundary between said channel region and said source and drain regions increases toward said source and drain regions.

Claim 19

A semiconductor device including: at least one thin film transistor, said thin film transistor comprising: a semiconductor layer formed on an insulating surface; source, drain and channel regions formed in said semiconductor layer; a gate insulating film covering said semiconductor layer; and a gate electrode formed on said gate insulating film, said gate electrode comprising tantalum; a silicon nitride film formed in direct contact with the gate insulating film; a leveling film comprising organic resin formed in direct contact with the silicon nitride film; a source electrode formed in contact with the leveling film and the source region in the active layer through the gate insulating film, the silicon nitride film and the leveling film; a drain electrode formed in contact with the leveling film and the drain region in the active layer through the gate insulating film, the silicon nitride film and the leveling film; wherein a thickness of said gate insulating film at each boundary between said channel region and said source and drain regions increases toward said source and drain regions.

Claim 20

A device according to claim 16, wherein said gate electrode is covered with a tantalum oxide film.

Claim 21

A device according to claim 16, wherein said semiconductor device is one selected from the group consisting of a portable information processing terminal, a head mount display device, a front projection type liquid crystal display device, a portable telephone, a portable video camera and a rear projection type liquid crystal display device.

Claim 22

A device according to claim 16, wherein said organic resin includes at least one selected from the group consisting of acryl, polyimide, polyamide, polyimide amide, and epoxy.