US6011311A
Expired / Lapsed
US
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Multilevel interconnect structure for integrated circuits
Assignee: Nanya Technology Corp
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Filing: 1998-04-14
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Granted: 2000-01-04
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Expires: 2018-04-14
Abstract
Abstract A multilevel interconnect structure includes a lower conducting layer, a dielectric layer formed on the lower conducting layer, an upper conducting layer formed partly on the dielectric layer, and an I-shaped via plug for electrically connecting the lower conducting layer and the upper conducting layer. The I-shaped via plug has an upper portion which laterally extends into the upper conducting layer, and a lower portion which undercuts the lower conducting layer.
Inventors
- 👤 Edward Hsien-Sheng Hsing
- 👤 Jen-Der Hong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:32
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
79 words
A multilevel interconnect structure for an integrated circuit comprising: a first conducting layer; a dielectric layer formed on said first conducting layer; a second conducting layer formed partly on said dielectric layer; and an I-shaped via plug for electrically connecting said first conducting layer and said second conducting layer, wherein said I-shaped via plug has an upper portion laterally extending into said second conducting layer and a lower portion undercutting said first conducting layer of said multilevel interconnect structure.
Claim 2
Dependent Claim
79 words
A multilevel interconnect structure for an integrated circuit comprising: a first conducting layer; a dielectric layer formed on said first conducting layer; a second conducting layer formed partly on said dielectric layer; and an I-shaped via plug for electrically connecting said first conducting layer and said second conducting layer, wherein said I-shaped via plug has an upper portion laterally extending into said second conducting layer and a lower portion undercutting said first conducting layer of said multilevel interconnect structure.
Claim 3
Dependent Claim
16 words
The multilevel interconnect structure of claim 1, wherein said first conducting layer is made of metal.
Claim 4
Dependent Claim
21 words
The multilevel interconnect structure of claim 2, wherein said metal is selected from the group of aluminum (Al) and aluminum alloy.
Claim 5
Dependent Claim
20 words
The multilevel interconnect structure of claim 2, wherein said aluminum alloy is selected from the group of AlSiCu and AlCu.
Claim 6
Dependent Claim
16 words
The multilevel interconnect structure of claim 1, wherein said dielectric layer is made of silicon dioxide.
Claim 7
Dependent Claim
16 words
The multilevel interconnect structure of claim 1, wherein said second conducting layer is made of metal.
Claim 8
Dependent Claim
21 words
The multilevel interconnect structure of claim 6, wherein said metal is selected from the group of aluminum (Al) and aluminum alloy.
Claim 9
Dependent Claim
20 words
The multilevel interconnect structure of claim 7, wherein said aluminum alloy is selected from the group of AlSiCu and AlCu.
Claim 10
Dependent Claim
16 words
The multilevel interconnect structure of claim 1, wherein said via plug is made of tungsten (W).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-03 | 2003-07-05 | 2004-01-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-03 | 2007-07-05 | 2008-01-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-03 | 2011-07-05 | 2012-01-04 | $7700.00 | Window Closed / Lapsed |