Abstract The invention encompasses polishing systems for polishing semiconductive material substrates, and encompasses methods of cleaning polishing slurry from semiconductive substrate surfaces. In one aspect, the invention includes a method of cleaning a polishing slurry from a substrate surface comprising: a) providing a substrate surface having a polishing slurry in contact therewith; b) providing a liquid; c) injecting a gas into the liquid to increase a total dissolved gas concentration in the liquid; and d) after the injecting, providing the liquid against the substrate surface to displace the polishing slurry from the substrate surface. In another aspect the invention includes a method of polishing a substrate surface comprising: a) providing a polishing slurry between a substrate surface and a polishing pad; b) polishing the substrate surface with the polishing slurry; and c) removing the polishing slurry from the substrate surface, the removing comprising: i) providing a liquid; ii) removing a first gas from the liquid to reduce a total dissolved gas concentration in the liquid; iii) after the removing, dissolving a second gas in the liquid to increase the total dissolved gas concentration in the liquid; iv) after the dissolving, providing the liquid between the substrate surface and the polishing pad to displace the polishing slurry from the substrate surface.
A method of cleaning a polishing slurry from a substrate surface comprising: providing a substrate surface having a polishing slurry in contact therewith; providing a liquid, the liquid having a first gas dissolved therein; removing at least some of the first dissolved gas from the liquid to reduce a total dissolved gas concentration within the liquid; after removing the first dissolved gas, injecting a second gas into the liquid to increase a total dissolved gas concentration in the liquid; and providing the liquid with the increased total dissolved gas concentration against the substrate surface to displace the polishing slurry from the substrate surface.
Claim 2
Independent Claim
103 words
A method of cleaning a polishing slurry from a substrate surface comprising: providing a substrate surface having a polishing slurry in contact therewith; providing a liquid, the liquid having a first gas dissolved therein; removing at least some of the first dissolved gas from the liquid to reduce a total dissolved gas concentration within the liquid; after removing the first dissolved gas, injecting a second gas into the liquid to increase a total dissolved gas concentration in the liquid; and providing the liquid with the increased total dissolved gas concentration against the substrate surface to displace the polishing slurry from the substrate surface.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein the liquid comprises deionized water.
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein the liquid consists essentially of deionized water having some gas dissolved therein.
Claim 5
Dependent Claim
26 words
The method of claim 1 wherein the liquid consists essentially of deionized water having some gas dissolved therein, and wherein the substrate is a semiconductive wafer.
Claim 6
Dependent Claim
26 words
The method of claim 1 wherein the injecting the gas into the liquid comprises flowing pressurized gas through a gas dispersion unit and into the liquid.