US6005226A
Expired / Lapsed
US
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Rapid thermal processing (RTP) system with gas driven rotating substrate
Assignee: STEAG-RTP SYSTEMS
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Filing: 1997-11-24
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Granted: 1999-12-21
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Expires: 2017-11-24
Abstract
Abstract An apparatus, method, and system for Rapid Thermal Processing (RTP), whereby the object to be processed is rotated under the radiation sources of the RTP system by a gas jet system, is presented.
Inventors
- 👤 Helmut Aschner
- 👤 Andreas Hauke
- 👤 Ulrich Walk
- 👤 Dieter Zernickel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:02
CPC Classifications
H; H10; H10P; H10P95/00; H10P72/00; H10P72/04; H10P72/0431; H10P72/0436; C; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4584; C23C16/48; C23C16/481; C30; C30B; C30B31/00; C30B31/06; C30B31/12; C30B31/14; H10P72/70; H10P72/78
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
103 words
An apparatus for rapid thermal processing (RTP) of a semiconductor wafer in an RTP system, comprising: a base, the base having at least one gas flow channel for impinging a first gas flow on a rotatable wafer holder in the RTP system, the first gas flow acting primarily to support the wafer holder; and a means for impinging a second gas flow on the wafer holder, the second gas flow separate from the first gas flow, the second gas flow acting primarily to rotate the wafer holder with respect to the base, the wafer holder for supporting the semiconductor wafer to be processed.
Claim 2
Independent Claim
103 words
An apparatus for rapid thermal processing (RTP) of a semiconductor wafer in an RTP system, comprising: a base, the base having at least one gas flow channel for impinging a first gas flow on a rotatable wafer holder in the RTP system, the first gas flow acting primarily to support the wafer holder; and a means for impinging a second gas flow on the wafer holder, the second gas flow separate from the first gas flow, the second gas flow acting primarily to rotate the wafer holder with respect to the base, the wafer holder for supporting the semiconductor wafer to be processed.
Claim 3
Dependent Claim
13 words
The apparatus of claim 1, wherein the semiconductor wafer is a silicon wafer.
Claim 4
Dependent Claim
24 words
The apparatus of claim 1, wherein the wafer holder is substantially constrained to rotate about an axis by a pressure distribution of flowing gas.
Claim 5
Dependent Claim
48 words
The apparatus of claim 1, wherein the base allows entry of a support pan supporting the semiconductor wafer, the base allows deposition of the semiconductor wafer on the wafer holder, and the base allows withdrawal of the support pan leaving the semiconductor wafer supported by the wafer holder.
Claim 6
Dependent Claim
22 words
The apparatus of claim 1, wherein the wafer holder is constrained to rotate about an axis by a pin and detent means.
Claim 7
Dependent Claim
26 words
The apparatus of claim 1, wherein the wafer holder is constrained to rotate about an axis by a retainer member fixed with respect to the base.
Claim 8
Dependent Claim
22 words
The apparatus of claim 1, wherein the wafer holder is constrained to rotate about an axis by a shaft and bearing means.
Claim 9
Dependent Claim
14 words
The apparatus of claim 7, wherein the bearing means is a gas pressure bearing.
Claim 10
Dependent Claim
21 words
The apparatus of claim 1, wherein the wafer holder is substantially transparent to radiation from radiation sources of the RTP system.
Claim 11
Independent Claim
80 words
A method for rapid thermal processing (RTP), comprising: supporting a semiconductor wafer on a wafer holder in an RTP system; and impinging a first gas flow on the wafer holder, the first gas flow acting primarily to support the wafer holder; and impinging a second gas flow on the wafer holder, the second gas flow separate from the first gas flow, the second gas flow acting primarily to induce rotation of the wafer holder with respect to the RTP system.
Claim 12
Independent Claim
80 words
A method for rapid thermal processing (RTP), comprising: supporting a semiconductor wafer on a wafer holder in an RTP system; and impinging a first gas flow on the wafer holder, the first gas flow acting primarily to support the wafer holder; and impinging a second gas flow on the wafer holder, the second gas flow separate from the first gas flow, the second gas flow acting primarily to induce rotation of the wafer holder with respect to the RTP system.
Claim 13
Dependent Claim
13 words
The method of claim 10, wherein the semiconductor wafer is a silicon wafer.
Claim 14
Dependent Claim
37 words
The method of claim 10, further comprising a step of impinging a gas flow on the wafer holder to stop the rotation of the wafer holder after the step of impinging as gas flow to induce rotation.
Claim 15
Dependent Claim
23 words
The method of claim 10, wherein the wafer holder is constrained to rotate about an axis by a pressure distribution of flowing gas.
Claim 16
Dependent Claim
33 words
The method of claim 10, wherein a base is fixed with respect to the RTP system, the base having gas flow channels for directing gas flows to support and rotate the wafer holder.
Claim 17
Dependent Claim
48 words
The method of claim 14, wherein the base allows entry of a support pan supporting the semiconductor wafer, the base allows deposition of the semiconductor wafer on the wafer holder, and the base allows withdrawal of the support pan leaving the semiconductor wafer supported by the wafer holder.
Claim 18
Dependent Claim
22 words
The method of claim 10, wherein the wafer holder is constrained to rotate about an axis by a pin and detent system.
Claim 19
Dependent Claim
20 words
The method of claim 10, wherein the wafer holder is constrained to rotate about an axis by fixed retainer members.
Claim 20
Dependent Claim
21 words
The method of claim 10, wherein the wafer holder is constrained to rotate about an axis by shaft and bearing means.
Claim 21
Dependent Claim
13 words
The method of claim 18, wherein the bearing means is a gas bearing.
Claim 22
Independent Claim
139 words
A system for rapid thermal processing (RTP) of a semiconductor wafer, comprising: a radiation source for irradiating the semiconductor wafer; an RTP chamber having at least a portion of at least one chamber wall transparent to the radiation from the radiation source; a base, the base having at least one gas flow channel for impinging a first gas flow on a rotatable wafer holder in the RTP chamber, the first gas flow acting primarily to support the wafer holder; a means for impinging a second gas flow acting primarily to rotate the wafer holder with respect to the base, the second gas flow separate from the first gas flow; gas supply means for supplying gas for the first and second gas flows and for the RTP chamber; control means for controlling the radiation source and the gas supply means.
Claim 23
Independent Claim
139 words
A system for rapid thermal processing (RTP) of a semiconductor wafer, comprising: a radiation source for irradiating the semiconductor wafer; an RTP chamber having at least a portion of at least one chamber wall transparent to the radiation from the radiation source; a base, the base having at least one gas flow channel for impinging a first gas flow on a rotatable wafer holder in the RTP chamber, the first gas flow acting primarily to support the wafer holder; a means for impinging a second gas flow acting primarily to rotate the wafer holder with respect to the base, the second gas flow separate from the first gas flow; gas supply means for supplying gas for the first and second gas flows and for the RTP chamber; control means for controlling the radiation source and the gas supply means.
Claim 24
Independent Claim
116 words
An apparatus for rapid thermal processing (RTP) of a semiconductor wafer in an RTP system, comprising: a base, the base having at least one gas flow channel for impinging a first gas flow on a rotatable wafer holder in the RTP system, the first gas flow acting primarily to support the wafer holder; a second gas flow on a rotatable wafer holder in the RTP system, the second gas flow separate from the first gas flow, the second gas flow acting primarily to rotate the wafer holder with respect to the base, the wafer holder for supporting the object to be processed, wherein the base is transparent to radiation from radiation sources of the RTP system.
Claim 25
Independent Claim
116 words
An apparatus for rapid thermal processing (RTP) of a semiconductor wafer in an RTP system, comprising: a base, the base having at least one gas flow channel for impinging a first gas flow on a rotatable wafer holder in the RTP system, the first gas flow acting primarily to support the wafer holder; a second gas flow on a rotatable wafer holder in the RTP system, the second gas flow separate from the first gas flow, the second gas flow acting primarily to rotate the wafer holder with respect to the base, the wafer holder for supporting the object to be processed, wherein the base is transparent to radiation from radiation sources of the RTP system.
Claim 26
Dependent Claim
48 words
The apparatus of claim 21, further comprising a means for impinging a third gas flow on to the wafer holder, the third gas flow separate from the second gas flow, the third gas flow for stopping the rotation of the wafer holder induced by the second gas flow.
Claim 27
Dependent Claim
27 words
The apparatus of claim 21, further comprising a rotatable wafer holder, where the rotatable wafer holder is transparent to radiation from radiation sources of the RTP system.
Claim 28
Dependent Claim
27 words
The apparatus of claim 22, further comprising a rotatable wafer holder, where the rotatable wafer holder is transparent to radiation from radiation sources of the RTP system.
Claim 29
Dependent Claim
52 words
The apparatus of claim 1, further comprising a means for impinging a third gas flow on to the wafer holder, the third gas flow separate from the first and from the second gas flows, the third gas flow for stopping the rotation of the wafer holder induced by the second gas flow.
Claim 30
Dependent Claim
65 words
The system of claim 20, further comprising a means for impinging a third gas flow on to the wafer holder, the third gas flow separate from the first and from the second gas flows, the third gas flow for stopping the rotation of the wafer holder induced by the second gas flow, wherein the gas supply means also supplies gas for the third gas flow.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-12-20 | 2003-06-21 | 2003-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-20 | 2007-06-21 | 2007-12-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-20 | 2011-06-21 | 2011-12-21 | $7700.00 | Window Closed / Lapsed |