US5994030A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pattern-forming method and lithographic system
Assignee: Toshiba Corp
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Filing: 1998-02-26
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Granted: 1999-11-30
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Expires: 2018-02-26
Abstract
Abstract A rough pattern exceeding the resolution limit of light exposure is formed by light resolution. A fine pattern not exceeding the resolution limit of light exposure is formed by charge-beam exposure. Combining the rough pattern and the fine pattern produces a desired pattern. The sharing of the work between light exposure and charge-beam exposure exhibits the high throughput of light exposure and the excellent resolving power of charge-beam exposure.
Inventors
- 👤 Kazuyoshi Sugihara
- 👤 Hiromi Niiyama
- 👤 Shunko Magoshi
- 👤 Atsushi Ando
- 👤 Tetsuro Nakasugi
- 👤 Shinji Sato
- 👤 Yumi Watanabe
- 👤 Yosimitu Kato
- 👤 Toru Shibata
- 👤 Katsuya Okumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 10:54
CPC Classifications
B; B82; B82Y; B82Y10/00; G; G03; G03F; G03F7/00; G03F7/20; G03F7/2022; G03F7/203; B82Y40/00; G03F7/70; G03F7/70425; G03F7/7045; H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3174
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
73 words
A pattern forming method of forming a desired pattern on a photosensitive material on a substrate by using both light exposure and charge-beam exposure, comprising: a step (a) of forming, by light exposure, a rough pattern exceeding the resolution limit of said light exposure in said desired pattern; and a step (b) of forming, by charge-beam exposure, a fine pattern not exceeding the resolution limit of said light exposure in said desired pattern.
Claim 2
Dependent Claim
73 words
A pattern forming method of forming a desired pattern on a photosensitive material on a substrate by using both light exposure and charge-beam exposure, comprising: a step (a) of forming, by light exposure, a rough pattern exceeding the resolution limit of said light exposure in said desired pattern; and a step (b) of forming, by charge-beam exposure, a fine pattern not exceeding the resolution limit of said light exposure in said desired pattern.
Claim 3
Dependent Claim
27 words
A pattern forming method according to claim 1, further comprising a step (c) of developing said photosensitive material after said steps (a) and (b) have been completed.
Claim 4
Dependent Claim
29 words
A pattern forming method according to claim 1, wherein said photosensitive material is a chemical amplification negative resist or positive resist sensitive to both light and a charge beam.
Claim 5
Dependent Claim
23 words
A pattern forming method according to claim 1, wherein the wavelength of light for said light exposure belongs to a far ultraviolet region.
Claim 6
Dependent Claim
27 words
A pattern forming method according to claim 1, wherein said step (b) includes a substep of simultaneously exposing part of the repetitive portions in said desired pattern.
Claim 7
Dependent Claim
21 words
A pattern forming method according to claim 1, wherein said photosensitive material is composed of an antireflection film and a resist.
Claim 8
Dependent Claim
21 words
A pattern forming method according to claim 6, wherein at least one of said resist and said antireflection film is conductive.
Claim 9
Dependent Claim
43 words
A pattern forming method according to claim 1, further comprising a step (d) of dividing data on said desired pattern into data on said rough pattern and data on said fine pattern on the basis of the critical resolution of said light exposure.
Claim 10
Dependent Claim
38 words
A pattern forming method according to claim 8, wherein said step (d) includes a substep of adjusting data on position information of said fine pattern on the basis of a shift in the position of said light exposure.
Claim 11
Dependent Claim
16 words
A pattern forming method according to claim 1, wherein said charge beam is an electron beam.
References Cited (Backward Citations)
JPH097924A
Cited
US5789140A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-11-29 | 2003-05-31 | 2003-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-29 | 2007-05-31 | 2007-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-29 | 2011-05-31 | 2011-11-30 | $7700.00 | Window Closed / Lapsed |