US5976924A
Expired / Lapsed
US
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Method of making a self-aligned disposable gate electrode for advanced CMOS design
Assignee: Advanced Micro Devices Inc
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Filing: 1997-12-30
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Granted: 1999-11-02
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Expires: 2017-12-30
Abstract
Abstract A method of fabricating an integrated circuit transistor in a substrate is provided wherein a self-aligned gate electrode is formed after the high temperature steps associated with sidewall spacer formation and source/drain anneal. A first dielectric layer is formed on a substrate. First and second source/drain regions are formed in the substrate and spaced laterally to define a channel region underlying the first dielectric layer. A second dielectric layer is formed on the substrate except where the first dielectric layer is positioned. The first dielectric layer is removed and a third dielectric layer is formed that overlies the channel region. A gate electrode is formed on the third dielectric layer. The first dielectric layer functions as a disposable gate electrode to facilitate self-aligned source/drain implant and sidewall spacer formation.
Inventors
- 👤 Mark I. Gardner
- 👤 Derick J. Wristers
- 👤 H. Jim Fulford
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 13:48
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D64/00; H10D64/01; H10D64/017
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
83 words
A method of forming self-aligned sidewall spacers for a gate electrode of an integrated circuit transistor on a substrate, comprising the steps of: forming a first dielectric layer on the substrate; forming first and second source/drain regions in the substrate such that the first and second source drain/regions are laterally spaced to define a channel region underlying the first dielectric layer; forming a second dielectric layer on the substrate except where the first dielectric layer is positioned; and removing the first dielectric layer.
Claim 2
Independent Claim
83 words
A method of forming self-aligned sidewall spacers for a gate electrode of an integrated circuit transistor on a substrate, comprising the steps of: forming a first dielectric layer on the substrate; forming first and second source/drain regions in the substrate such that the first and second source drain/regions are laterally spaced to define a channel region underlying the first dielectric layer; forming a second dielectric layer on the substrate except where the first dielectric layer is positioned; and removing the first dielectric layer.
Claim 3
Dependent Claim
31 words
The method of claim 1, wherein the first dielectric comprises a layer of silicon dioxide on the substrate and a layer of silicon nitride formed on the layer of silicon dioxide.
Claim 4
Dependent Claim
13 words
The method of claim 2, wherein the second dielectric layer comprises silicon dioxide.
Claim 5
Dependent Claim
13 words
The method of claim 1, wherein the first dielectric layer comprises silicon dioxide.
Claim 6
Independent Claim
85 words
A method of fabricating an integrated circuit transistor on a substrate, comprising the steps of: forming a first dielectric layer on the substrate; forming first and second source/drain regions in the substrate such that the first and second source drain/regions are laterally spaced to define a channel region underlying the first dielectric layer; forming a second dielectric layer on the substrate; removing the first dielectric layer; forming a third dielectric layer overlying the channel region; and forming a gate electrode on the third dielectric layer.
Claim 7
Independent Claim
85 words
A method of fabricating an integrated circuit transistor on a substrate, comprising the steps of: forming a first dielectric layer on the substrate; forming first and second source/drain regions in the substrate such that the first and second source drain/regions are laterally spaced to define a channel region underlying the first dielectric layer; forming a second dielectric layer on the substrate; removing the first dielectric layer; forming a third dielectric layer overlying the channel region; and forming a gate electrode on the third dielectric layer.
Claim 8
Dependent Claim
31 words
The method of claim 5, wherein the first dielectric comprises a layer of silicon dioxide on the substrate and a layer of silicon nitride formed on the layer of silicon dioxide.
Claim 9
Dependent Claim
13 words
The method of claim 6, wherein the second dielectric layer comprises silicon dioxide.
Claim 10
Dependent Claim
13 words
The method of claim 5, wherein the first dielectric layer comprises silicon dioxide.
Claim 11
Dependent Claim
13 words
The method of claim 8, wherein the second dielectric layer comprises silicon oxynitride.
Claim 12
Dependent Claim
13 words
The method of claim 8, wherein the second dielectric layer comprises silicon nitride.
Claim 13
Dependent Claim
13 words
The method of claim 5, wherein the first dielectric layer comprises silicon oxynitride.
Claim 14
Dependent Claim
13 words
The method of claim 11, wherein the second dielectric layer comprises silicon dioxide.
Claim 15
Dependent Claim
24 words
The method of claim 5, wherein the step of forming the first and second source/drain regions comprises implanting the substrate with a dopant species.
Claim 16
Dependent Claim
11 words
The method of claim 13, wherein the dopant species comprises arsenic.
Claim 17
Dependent Claim
30 words
The method of claim 5, wherein the step of forming the second dielectric layer comprises forming the dielectric layer on the substrate except where the first dielectric layer is located.
Claim 18
Dependent Claim
13 words
The method of claim 5, wherein the third dielectric layer comprises silicon dioxide.
Claim 19
Dependent Claim
23 words
The method of claim 5, wherein the step of forming the gate electrode comprises depositing a conducting material over the third dielectric layer.
Claim 20
Independent Claim
97 words
A method of fabricating an integrated circuit transistor on a substrate, comprising the steps of: forming a first dielectric layer on the substrate; implanting the substrate with arsenic to form first and second source/drain regions in the substrate, the first and second source/drain regions being laterally spaced to define a channel region underlying the first dielectric layer; forming a second dielectric layer on the substrate except where the first dielectric layer is positioned; removing the first dielectric layer; forming a gate oxide layer overlying the channel region; and forming a gate electrode on the gate oxide layer.
Claim 21
Independent Claim
97 words
A method of fabricating an integrated circuit transistor on a substrate, comprising the steps of: forming a first dielectric layer on the substrate; implanting the substrate with arsenic to form first and second source/drain regions in the substrate, the first and second source/drain regions being laterally spaced to define a channel region underlying the first dielectric layer; forming a second dielectric layer on the substrate except where the first dielectric layer is positioned; removing the first dielectric layer; forming a gate oxide layer overlying the channel region; and forming a gate electrode on the gate oxide layer.
Claim 22
Dependent Claim
31 words
The method of claim 18, wherein the first dielectric comprises a layer of silicon dioxide on the substrate and a layer of silicon nitride formed on the layer of silicon dioxide.
Claim 23
Dependent Claim
13 words
The method of claim 19, wherein the second dielectric layer comprises silicon dioxide.
Claim 24
Dependent Claim
13 words
The method of claim 18, wherein the first dielectric layer comprises silicon dioxide.
Claim 25
Dependent Claim
13 words
The method of claim 21, wherein the second dielectric layer comprises silicon oxynitride.
Claim 26
Dependent Claim
13 words
The method of claim 21, wherein the second dielectric layer comprises silicon nitride.
Claim 27
Dependent Claim
13 words
The method of claim 18, wherein the first dielectric layer comprises silicon oxynitride.
Claim 28
Dependent Claim
13 words
The method of claim 24, wherein the second dielectric layer comprises silicon dioxide.
Claim 29
Dependent Claim
30 words
The method of claim 18, wherein the step of forming the second dielectric layer comprises forming the dielectric layer on the substrate except where the first dielectric layer is located.
Claim 30
Dependent Claim
23 words
The method of claim 18, wherein the step of forming the gate electrode comprises depositing a conducting material over the gate oxide layer.
Claim 31
Independent Claim
86 words
A method of fabricating an integrated circuit transistor on a substrate, comprising the steps of: forming a dielectric layer on the substrate; forming first and second source/drain regions in the substrate such that the first and second source drain/regions are laterally spaced to define a channel region underlying the dielectric layer; forming a layer of silicon dioxide on the substrate; removing the dielectric layer; forming a second layer of silicon dioxide overlying the channel region; and forming a gate electrode on the second silicon dioxide layer.
Claim 32
Independent Claim
86 words
A method of fabricating an integrated circuit transistor on a substrate, comprising the steps of: forming a dielectric layer on the substrate; forming first and second source/drain regions in the substrate such that the first and second source drain/regions are laterally spaced to define a channel region underlying the dielectric layer; forming a layer of silicon dioxide on the substrate; removing the dielectric layer; forming a second layer of silicon dioxide overlying the channel region; and forming a gate electrode on the second silicon dioxide layer.
Claim 33
Dependent Claim
36 words
The method of claim 28, wherein the step of forming the dielectric layer comprises growing a layer of silicon dioxide on the substrate and depositing a layer of silicon nitride on the layer of silicon dioxide.
Claim 34
Dependent Claim
34 words
The method of claim 28, wherein the step of forming the first layer of silicon dioxide comprises forming the second layer of silicon dioxide on the substrate except where the dielectric layer is located.
Claim 35
Dependent Claim
25 words
The method of claim 28, wherein the step of forming the gate electrode comprises depositing a conducting material over the second layer of silicon dioxide.
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