Patent US6332144B1 successfully refreshed from Google Patents.
Patent EP0253185A1 successfully refreshed from Google Patents.
Patent EP0789270A1 successfully refreshed from Google Patents.
US5976918A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming insulating film with few hydrogen atom inclusions
Assignee: Sharp Corp
•
Filing: 1997-12-04
•
Granted: 1999-11-02
•
Expires: 2017-12-04
Abstract
Abstract In accordance with the development of the fineness of MOSFETs, a gate insulating film and a capacitor insulating film are required to have a smaller thickness and a higher film quality. Accordingly, the present invention is intended to provide a method for forming a high-quality insulating film while preventing hydrogen atoms which cause a leak current and an electron trap from entering the insulating film. The present method uses a gas of molecules containing at least nitrogen, the gas is a compound which includes no oxygen atom and has no bond of a nitrogen atom and a hydrogen atom (N--H) and generates monoatomic nitrogen when the gas dissociates.
Inventors
- 👤 Toshimasa Matsuoka
- 👤 Masayuki Nakano
- 👤 Satoshi Morishita
- 👤 Hiroshi Iwata
- 👤 Seizo Kakimoto
- 👤 Takashi Fukushima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:35
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6316; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6519; H10P14/6522; H10P14/6524; H10P14/6526; H10P14/6529; H10P14/6309; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6502; H10P14/6504; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
57 words
An insulating film forming method on a silicon substrate by means of a gas of molecules containing at least nitrogen, said gas of molecules containing nitrogen being a compound which includes no oxygen atom and has no bond between a nitrogen atom and a hydrogen atom and being a gas which generates monoatomic nitrogen when it dissociates.
Claim 2
Dependent Claim
57 words
An insulating film forming method on a silicon substrate by means of a gas of molecules containing at least nitrogen, said gas of molecules containing nitrogen being a compound which includes no oxygen atom and has no bond between a nitrogen atom and a hydrogen atom and being a gas which generates monoatomic nitrogen when it dissociates.
Claim 3
Dependent Claim
24 words
An insulating film forming method as claimed in claim 1, wherein said gas of molecules containing nitrogen is at least either amine or azide.
Claim 4
Dependent Claim
15 words
An insulating film forming method as claimed in claim 2, wherein said amine is triallylamine.
Claim 5
Dependent Claim
15 words
An insulating film forming method as claimed in claim 2, wherein said azide is ethylazide.
Claim 6
Dependent Claim
23 words
An insulating film forming method as claimed in claim 1, wherein said gas of molecules containing nitrogen is used at a reduced pressure.
Claim 7
Dependent Claim
36 words
An insulating film forming method as claimed in claim 1, wherein said gas of molecules containing nitrogen is liquid at normal temperature and normal pressure and is supplied by bubbling an inert gas in said liquid.
Claim 8
Dependent Claim
40 words
An insulating film forming method as claimed in claim 1, wherein a nitride film is formed on the silicon substrate by means of said gas of molecules containing nitrogen and thereafter thermally treated in an atmosphere including an oxidative gas.
Claim 9
Dependent Claim
38 words
An insulating film forming method as claimed in claim 1, wherein an oxide film is formed by oxidizing a surface of the silicon substrate and thereafter thermally treated in an atmosphere including said gas of molecules containing nitrogen.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-01 | 2003-05-03 | 2003-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-01 | 2007-05-03 | 2007-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-01 | 2011-05-03 | 2011-11-02 | $7700.00 | Window Closed / Lapsed |