US5972764A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing MOS transistor
Assignee: Hanger Solutions LLC
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Filing: 1999-03-16
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Granted: 1999-10-26
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Expires: 2019-03-16
Abstract
Abstract A method for manufacturing a metal-oxide-semiconductor (MOS) transistor is described. In the invention, doped regions of the local pocket type are formed in the substrate after the source/drain terminals of a MOS transistor in the logic circuit area are formed. The method includes the steps of forming an insulation layer over the entire substrate. Then, a portion of the insulation layer is removed to expose the spacers on the sidewalls of the gate electrode. Subsequently, the spacers are removed, and then an ion implantation operation is conducted to implant dopants into the substrate through the windows formed by the uprooted spacers. Ultimately, doped regions of the local pocket type are formed in the substrate under the lightly doped drain source/drain terminals of a MOS transistor.
Inventors
- 👤 Hsiu-Wen Huang
- 👤 Jhy-Jyi Sze
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 12:15
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/013; H10D84/02; H10D84/03; H10D84/038; Y; Y10; Y10S; Y10S438/00; Y10S438/976
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
278 words
A method for manufacturing a metal-oxide-semiconductor (MOS) transistor, comprising the steps of: providing a substrate having a device isolation structure thereon; forming a gate oxide layer over the substrate; forming a gate electrode and a cap layer over the gate oxide layer; forming a conformal first insulation layer and a conformal second insulation layer over the gate oxide layer, the gate electrode and the cap layer; forming a first doped region of a first polarity type in the substrate on each side of the gate electrode using the cap layer and the device isolation structure as a mask; forming first spacers on the second insulation layer next to the first insulation layer that borders upon the sidewalls of the gate electrode and the cap layer; forming a second doped region of the first polarity type in the substrate using the first spacers, the cap layer and the device isolation structure as a mask; forming a planarized third insulation layer over the substrate that also covers the first spacers; removing a portion of the third insulation layer and a portion of the second insulation layer to expose a portion of the first spacers; removing the first spacers, a portion of the first insulation layer and the cap layer; and implanting ions into substrate regions under the first doped regions defined by the sidewalls of an uprooted first spacer to form a third doped region of a second polarity type; wherein the first insulation layer, the first spacers and the cap layer are made from a material that includes silicon nitride, while the second insulation layer and the third insulation layer are made from a material that includes silicon oxide.
Claim 2
Independent Claim
278 words
A method for manufacturing a metal-oxide-semiconductor (MOS) transistor, comprising the steps of: providing a substrate having a device isolation structure thereon; forming a gate oxide layer over the substrate; forming a gate electrode and a cap layer over the gate oxide layer; forming a conformal first insulation layer and a conformal second insulation layer over the gate oxide layer, the gate electrode and the cap layer; forming a first doped region of a first polarity type in the substrate on each side of the gate electrode using the cap layer and the device isolation structure as a mask; forming first spacers on the second insulation layer next to the first insulation layer that borders upon the sidewalls of the gate electrode and the cap layer; forming a second doped region of the first polarity type in the substrate using the first spacers, the cap layer and the device isolation structure as a mask; forming a planarized third insulation layer over the substrate that also covers the first spacers; removing a portion of the third insulation layer and a portion of the second insulation layer to expose a portion of the first spacers; removing the first spacers, a portion of the first insulation layer and the cap layer; and implanting ions into substrate regions under the first doped regions defined by the sidewalls of an uprooted first spacer to form a third doped region of a second polarity type; wherein the first insulation layer, the first spacers and the cap layer are made from a material that includes silicon nitride, while the second insulation layer and the third insulation layer are made from a material that includes silicon oxide.
Claim 3
Dependent Claim
47 words
The method of claim 1, wherein the method further includes the steps of: removing the third insulation layer and the second insulation layer to expose the first insulation layer; and forming second spacers on the first insulation layer that borders upon the sidewalls of the gate electrode.
Claim 4
Dependent Claim
38 words
The method of claim 1, wherein the method further includes the steps of: removing the third insulation layer, the second insulation layer and the first insulation layer; and forming second spacers on the sidewalls of the gate electrode.
Claim 5
Dependent Claim
41 words
The method of claim 1, wherein the first insulation layer, the first spacers and the cap layer are made from one type of material while the second insulation layer and the third insulation layer are made from another type of material.
Claim 6
Dependent Claim
45 words
The method of claim 2, wherein the first insulation layer, the first spacers and the cap layer are made from a material that includes silicon nitride while the second insulation layer and the third insulation layer are made from a material that includes silicon oxide.
Claim 7
Dependent Claim
45 words
The method of claim 3, wherein the first insulation layer, the first spacers and the cap layer are made from a material that includes silicon nitride while the second insulation layer and the third insulation layer are made from a material that includes silicon oxide.
Claim 8
Dependent Claim
21 words
The method of claim 2, wherein the first polarity type includes an N-type while the second polarity type includes a P-type.
Claim 9
Dependent Claim
21 words
The method of claim 3, wherein the first polarity type includes an N-type while the second polarity type includes a P-type.
Claim 10
Dependent Claim
21 words
The method of claim 2, wherein the first polarity type includes a P-type while the second polarity type includes an N-type.
Claim 11
Dependent Claim
21 words
The method of claim 3, wherein the first polarity type includes a P-type while the second polarity type includes an N-type.
Claim 12
Independent Claim
326 words
A method for manufacturing a metal-oxide-semiconductor (MOS) transistor on a substrate divided into a logic circuit area and a memory cell area such that a device isolation structure is formed therein, comprising the steps of: forming a gate oxide layer over the substrate; forming a gate electrode and a cap layer over the gate oxide layer; forming a conformal first insulation layer and a conformal second insulation layer over the gate oxide layer, the gate electrode and the cap layer; forming a first doped region of a first polarity type in the substrate on each side of the gate electrode using the cap layer and the device isolation structure as a mask; forming first spacers on the second insulation layer next to the first insulation layer that borders on the sidewalls of the gate electrode and the cap layer; forming a mask layer over the memory cell area, and then forming a second doped region of the first polarity type in the substrate within the logic circuit area using the first spacers, the cap layer and the device isolation structure as a mask; removing the mask layer over the memory cell area; forming a planarized third insulation layer over the substrate; removing a portion of the third insulation layer and a portion of the second insulation layer in the logic circuit area to expose a portion of the first spacers; removing the first spacers, a portion of the first insulation layer and the cap layer in the logic circuit area; and implanting ions into the substrate inside the logic circuit area under the first doped regions defined by the sidewalls of an uprooted first spacer to form a third doped region of a second polarity type; wherein the first insulation layer, the first spacers and the cap layer are made from a material that includes silicon nitride, while the second insulation layer and the third insulation layer are made from a material that includes silicon oxide.
Claim 13
Independent Claim
326 words
A method for manufacturing a metal-oxide-semiconductor (MOS) transistor on a substrate divided into a logic circuit area and a memory cell area such that a device isolation structure is formed therein, comprising the steps of: forming a gate oxide layer over the substrate; forming a gate electrode and a cap layer over the gate oxide layer; forming a conformal first insulation layer and a conformal second insulation layer over the gate oxide layer, the gate electrode and the cap layer; forming a first doped region of a first polarity type in the substrate on each side of the gate electrode using the cap layer and the device isolation structure as a mask; forming first spacers on the second insulation layer next to the first insulation layer that borders on the sidewalls of the gate electrode and the cap layer; forming a mask layer over the memory cell area, and then forming a second doped region of the first polarity type in the substrate within the logic circuit area using the first spacers, the cap layer and the device isolation structure as a mask; removing the mask layer over the memory cell area; forming a planarized third insulation layer over the substrate; removing a portion of the third insulation layer and a portion of the second insulation layer in the logic circuit area to expose a portion of the first spacers; removing the first spacers, a portion of the first insulation layer and the cap layer in the logic circuit area; and implanting ions into the substrate inside the logic circuit area under the first doped regions defined by the sidewalls of an uprooted first spacer to form a third doped region of a second polarity type; wherein the first insulation layer, the first spacers and the cap layer are made from a material that includes silicon nitride, while the second insulation layer and the third insulation layer are made from a material that includes silicon oxide.
Claim 14
Dependent Claim
47 words
The method of claim 11, wherein the method further includes the steps of: removing the third insulation layer and the second insulation layer to expose the first insulation layer; and forming second spacers on the first insulation layer that borders upon the sidewalls of the gate electrode.
Claim 15
Dependent Claim
38 words
The method of claim 11, wherein the method further includes the steps of: removing the third insulation layer, the second insulation layer and the first insulation layer; and forming second spacers on the sidewalls of the gate electrode.
Claim 16
Dependent Claim
41 words
The method of claim 11, wherein the first insulation layer, the first spacers and the cap layer are made from one type of material while the second insulation layer and the third insulation layer are made from another type of material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-10-25 | 2003-04-26 | 2003-10-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-10-25 | 2007-04-26 | 2007-10-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-10-25 | 2011-04-26 | 2011-10-26 | $7700.00 | Window Closed / Lapsed |