US5965933A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor packaging apparatus
Assignee: Harris Corp
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Filing: 1996-05-28
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Granted: 1999-10-12
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Expires: 2016-05-28
Abstract
Abstract Semiconductor devices 340 are formed in semiconductor wafer 300. Contact pads 332 are formed in each die 330. An interconnect connects the contact pads 332 to die surface contact regions 210, 212. Scribe trenches 348 are formed in device wafer 300; corresponding trenches 358 are formed in cover wafer 360. The cover wafer 360 is thinned to open scribe trenches 348. Conductive vias 310-313 connect the contact pads 210, 212 to external surface bump contacts 333.
Inventors
- 👤 William R. Young
- 👤 Kenneth A. Ports
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:28
CPC Classifications
H; H10; H10P; H10P52/00; H10W; H10W20/00; H10W20/20; H10W72/00; H10W72/20; H10W72/221; H10W72/251; H10W72/90; H10W72/951; H10W72/952; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
168 words
A packaged semiconductor device comprising: a device die of semiconductor material having an inner surface and an outer surface, said inner surface having one or more semiconductor devices formed in the inner surface, said devices having one or more surface contact regions; an interconnect structure for connecting first and second contact pads, the first contact pad contacting the surface contact region in the surface of the device die and the second contact pad contacting a conductive via; a cover die having an inner surface and an outer surface with its inner surface bonded to the device die to cover the semiconductor devices; a conductive via extending from the outer surface of at least one of the device die and the cover die to the second contact pad and terminating on the second contact pad without penetrating through said second contact pad; and an external contact on the outer end of the conductive via for establishing a continuous conductive path from the external contact to the surface contact region.
Claim 2
Dependent Claim
168 words
A packaged semiconductor device comprising: a device die of semiconductor material having an inner surface and an outer surface, said inner surface having one or more semiconductor devices formed in the inner surface, said devices having one or more surface contact regions; an interconnect structure for connecting first and second contact pads, the first contact pad contacting the surface contact region in the surface of the device die and the second contact pad contacting a conductive via; a cover die having an inner surface and an outer surface with its inner surface bonded to the device die to cover the semiconductor devices; a conductive via extending from the outer surface of at least one of the device die and the cover die to the second contact pad and terminating on the second contact pad without penetrating through said second contact pad; and an external contact on the outer end of the conductive via for establishing a continuous conductive path from the external contact to the surface contact region.
Claim 3
Dependent Claim
27 words
The packaged semiconductor device of claim 1 further comprising a dielectric layer formed over the inner surface of the device die, said dielectric layer including said interconnect.
Claim 4
Dependent Claim
21 words
The packaged semiconductor device of claim 1 wherein the external contact further comprises a bump contact raised from said outer surface.
Claim 5
Dependent Claim
19 words
The packaged semiconductor device of claim 1 wherein the via extends to the outer surface of the device die.
Claim 6
Dependent Claim
27 words
The packaged semiconductor device of claim 1 wherein the via extends to the outer surface of the device die and the outer surface of the cover die.
Claim 7
Dependent Claim
29 words
The packaged semiconductor device of claim 1 wherein device die is one semiconductor material selected from the group consisting of silicon, germanium, silicon germanium, silicon carbide, and gallium arsenide.
Claim 8
Dependent Claim
28 words
The packaged semiconductor device of claim 1 wherein said cover die is one selected from the group consisting of silicon, germanium, silicon germanium, silicon carbide, and gallium arsenide.
Claim 9
Dependent Claim
14 words
The packaged semiconductor device of claim 1 wherein said device die comprises a cavity.
Claim 10
Dependent Claim
13 words
The packaged semiconductor device of claim 1 wherein said cover die is opaque.
Claim 11
Dependent Claim
18 words
The package semiconductor device of claim 1 wherein said cover die is transparent to visible and ultraviolet light.
Claim 12
Dependent Claim
22 words
The package semiconductor device of claim 1 wherein said cover die comprises transparent regions to visible and ultraviolet light and opaque regions.
Claim 13
Dependent Claim
22 words
The packaged semiconductor device of claim 1 wherein said device die comprises a cavity and a device is disposed in said cavity.
Claim 14
Dependent Claim
19 words
The packaged semiconductor device of claim 1 wherein the via extends to the outer surface of the cover die.
Claim 15
Dependent Claim
191 words
A packaged semiconductor device comprising: a device die of semiconductor material having an inner surface and an outer surface, said inner surface having one or more semiconductor devices formed in the inner surface, said device(s) having one or more surface contact regions; an interconnect structure for electrically connecting two or more contact pads; a first contact pad contacting the surface contact region in the surface of the device die and a second contact pad having a planar surface substantially parallel to the device die for contacting a conductive via said interconnect structure connecting said two pads; a cover die having an inner surface and an outer surface with its inner surface bonded to the device die to cover the semiconductor devices; a conductive via extending from the outer surface of at least one of the device die and cover die to the second contact pad and terminating transversely on the planar surface of the second contact pad without penetrating through said second contact pad; and an external contact on the outer end of the conductive via for establishing a continuous conductive path from the external contact to the surface contact region.
Claim 16
Dependent Claim
191 words
A packaged semiconductor device comprising: a device die of semiconductor material having an inner surface and an outer surface, said inner surface having one or more semiconductor devices formed in the inner surface, said device(s) having one or more surface contact regions; an interconnect structure for electrically connecting two or more contact pads; a first contact pad contacting the surface contact region in the surface of the device die and a second contact pad having a planar surface substantially parallel to the device die for contacting a conductive via said interconnect structure connecting said two pads; a cover die having an inner surface and an outer surface with its inner surface bonded to the device die to cover the semiconductor devices; a conductive via extending from the outer surface of at least one of the device die and cover die to the second contact pad and terminating transversely on the planar surface of the second contact pad without penetrating through said second contact pad; and an external contact on the outer end of the conductive via for establishing a continuous conductive path from the external contact to the surface contact region.
Claim 17
Dependent Claim
19 words
The packaged semiconductor device of claim 14 wherein the via extends to the outer surface of the device die.
Claim 18
Dependent Claim
19 words
The packaged semiconductor device of claim 14 wherein the via extends to the outer surface of the cover die.
Claim 19
Dependent Claim
23 words
The packaged semiconductor device of claim 14 wherein the via extends to the outer surfaces of both the device and the cover die.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-10-11 | 2003-04-12 | 2003-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-10-11 | 2007-04-12 | 2007-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-10-11 | 2011-04-12 | 2011-10-12 | $7700.00 | Window Closed / Lapsed |