US5959241A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Scanning force microscope thermal microprobe
Assignee: Hewlett Packard Development Co LP
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Filing: 1998-04-30
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Granted: 1999-09-28
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Expires: 2018-04-30
Abstract
Abstract A small bimetallic thermocouple probe device for use in scanning atomic force microscopy is mass produced by etching and oxidatively sharpening silicon points on a standard silicon wafer. The sharpened points are oxidized and the first thermocouple metal layer is deposited and patterned. The intermetal dielectric layer is deposited and removed in the area of the tip of the probe by a simple double spin photoresist process having a drying cycle between the two spins. The exposed tips have the dielectric etched, and the second thermocouple metal is deposited and patterned. The finished thermocouples are produced by etching the silicon from the back side of the wafer to free up the cantilevered structure which the probe are constructed upon. With such a procedure, large numbers of tiny, low thermal mass scanning atomic force microscope thermocouple probes may be inexpensively manufactured.
Inventors
- 👤 Tirunelveli Subramanian Sriram
- 👤 Robert B. Marcus
- 👤 Yongxia Zhang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 17:55
CPC Classifications
G; G01; G01K; G01K7/00; G01K7/02; G01K7/028; B; B82; B82Y; B82Y35/00; G01N; G01N25/00; G01N25/72; G01Q; G01Q60/00; G01Q60/58; Y; Y10; Y10S; Y10S977/00; Y10S977/84; Y10S977/849; Y10S977/86; Y10S977/875
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
100 words
A bimetallic thermocouple tip for a scanning force microscope comprising: a sharp semiconductor tip; a first dielectric layer disposed upon said semiconductor tip; a patterned first metal layer disposed upon said first dielectric layer; a second dielectric layer disposed upon said first metal layer; said second dielectric layer patterned to expose a predetermined sized region of said first metal layer through said second dielectric layer at an end of said semiconductor tip; and a second patterned metal layer disposed upon said second dielectric layer and contacting said first metal layer at said predetermined sized region through said second dielectric layer.
Claim 2
Dependent Claim
100 words
A bimetallic thermocouple tip for a scanning force microscope comprising: a sharp semiconductor tip; a first dielectric layer disposed upon said semiconductor tip; a patterned first metal layer disposed upon said first dielectric layer; a second dielectric layer disposed upon said first metal layer; said second dielectric layer patterned to expose a predetermined sized region of said first metal layer through said second dielectric layer at an end of said semiconductor tip; and a second patterned metal layer disposed upon said second dielectric layer and contacting said first metal layer at said predetermined sized region through said second dielectric layer.
Claim 3
Dependent Claim
16 words
The thermocouple of claim 1 wherein said sharp semiconductor tip is sharpened by an oxidation process.
Claim 4
Dependent Claim
30 words
The thermocouple of claim 1 wherein said first metal layer is comprised of a titanium layer covered by a palladium layer; and said second metal layer is comprised of gold.
Claim 5
Dependent Claim
47 words
The thermocouple of claim 1 wherein said sharp semiconductor tip is one of a plurality of individual semiconductor tips, each individual one of said plurality disposed upon a separate one of a plurality of cantilevered structures; and said plurality of cantilevered structures disposed upon a semiconductor substrate.
Claim 6
Dependent Claim
165 words
The thermocouple of claim 4 wherein said second dielectric layer is patterned to expose a predetermined sized region of said first metal layer through said second dielectric layer, formed by the steps of: applying a liquid photoresist of a controlled viscosity to said semiconductor substrate; spinning said semiconductor substrate and said liquid photoresist for a first predetermined time and rotational speed, providing a layer of said liquid photoresist sufficient to cover said sharp semiconductor tip; drying said liquid photoresist on said semiconductor substrate for a predetermined time, forming a semisolid film; and spinning said semiconductor substrate and said liquid photoresist for a second predetermined time and rotational speed such that said sharp semiconductor tip region protrudes through said photoresist film; curing said photoresist film and said liquid photoresist by drying and polymerization; removing said second dielectric layer from said first metal layer in that area of said sharp semiconductor tip that protrudes through said photoresist film; and removing said photoresist film from said semiconductor substrate.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-09-27 | 2003-03-29 | 2003-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-09-27 | 2007-03-29 | 2007-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-09-27 | 2011-03-29 | 2011-09-28 | $7700.00 | Window Closed / Lapsed |