US5942809A
Expired / Lapsed
US
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Method and apparatus for generating internal supply voltage
Assignee: Lapis Semiconductor Co Ltd
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Filing: 1997-12-24
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Granted: 1999-08-24
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Expires: 2017-12-24
Abstract
Abstract An apparatus and method for generating an internal supply voltage for a semiconductor integrated circuit, includes a first voltage generator which generates a voltage in response to a predetermined characteristic of the semiconductor integrated circuit, a second voltage generator which generates a second voltage from a reference voltage generator, and a selecting circuit which selects from among the first and second voltage. The selected voltage is suppled to an internal supply voltage generator which generates therefrom an internal supply voltage for the semiconductor integrated circuit. The first voltage is selected for regulating the internal supply voltage, being controlled in level according to the characteristic of the semiconductor integrated circuit.
Inventors
- 👤 Yuki Hashimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 15:01
CPC Classifications
G; G11; G11C; G11C5/00; G11C5/14; G11C5/143; G05; G05F; G05F1/00; G05F1/10; G05F1/46; G05F1/462; G05F1/465; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/24; G11C5/147
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
58 words
A method for generating an internal supply voltage for a semiconductor integrated circuit, comprising the steps of: generating a first voltage in response to a predetermined characteristic of the semiconductor integrated circuit; generating a second voltage; selecting one from the first voltage and the second voltage; and generating in response to the selected voltage an internal supply voltage.
Claim 2
Independent Claim
58 words
A method for generating an internal supply voltage for a semiconductor integrated circuit, comprising the steps of: generating a first voltage in response to a predetermined characteristic of the semiconductor integrated circuit; generating a second voltage; selecting one from the first voltage and the second voltage; and generating in response to the selected voltage an internal supply voltage.
Claim 3
Dependent Claim
24 words
The method according to claim 1, wherein the predetermined characteristic comprises the amount of supply current and access time of the semiconductor integrated circuit.
Claim 4
Dependent Claim
27 words
The method according to claim 1, further comprising the step of: generating a third voltage, wherein the selecting step is performed in response to the third voltage.
Claim 5
Dependent Claim
31 words
The method according to claim 1, wherein the step of generating the internal supply voltage comprises a step of trimming the internal supply voltage in order to generate an optimum voltage.
Claim 6
Dependent Claim
14 words
The method according to claim 1, wherein the second voltage is fixed in level.
Claim 7
Independent Claim
85 words
An apparatus for generating an internal supply voltage for a semiconductor integrated circuit, comprising: a first voltage generator which generates a first voltage in response to a predetermined characteristic of the semiconductor integrated circuit; a second voltage generator which generate a second voltage; a selecting circuit which is supplied with the first voltage and the second voltage to select one from the first and second voltages; and an internal supply voltage generator which is supplied with the selected voltage to generate an internal supply voltage.
Claim 8
Independent Claim
85 words
An apparatus for generating an internal supply voltage for a semiconductor integrated circuit, comprising: a first voltage generator which generates a first voltage in response to a predetermined characteristic of the semiconductor integrated circuit; a second voltage generator which generate a second voltage; a selecting circuit which is supplied with the first voltage and the second voltage to select one from the first and second voltages; and an internal supply voltage generator which is supplied with the selected voltage to generate an internal supply voltage.
Claim 9
Dependent Claim
22 words
The apparatus according to claim 6, wherein the predetermined characteristic comprises the supply current and access time of the semiconductor integrated circuit.
Claim 10
Dependent Claim
24 words
The apparatus according to claim 6, further comprising: a trimming circuit which trims the internal supply voltage in order to generate an optimum voltage.
Claim 11
Dependent Claim
14 words
The apparatus according to claim 6, wherein the second voltage is fixed in level.
Claim 12
Dependent Claim
45 words
The apparatus according to claim 6, further comprising: a third voltage generator which generates a third voltage; and a voltage monitoring circuit which detects the level of the third voltage, wherein the selecting circuit operates in response to the output of the voltage monitoring circuit.
Claim 13
Dependent Claim
27 words
The apparatus according to claim 10, further comprising: a latch circuit which holds the output of the voltage monitoring circuit to be supplied to the selecting circuit.
Claim 14
Dependent Claim
31 words
The apparatus according to claim 10, wherein the voltage monitoring circuit has a threshold voltage level of detection which is lower than an input voltage level of the semiconductor integrated circuit.
Claim 15
Dependent Claim
31 words
The apparatus according to claim 10, wherein the voltage monitoring circuit has a threshold voltage level of detection which is higher than an input voltage level of the semiconductor integrated circuit.
Claim 16
Dependent Claim
79 words
The apparatus according to claim 6, wherein the selecting circuit comprises a P-channel transistor which is connected at a terminal of source or drain to the first voltage generator and at the other terminal of drain or source to the internal supply voltage generator, so that the P-channel transistor is turned off when the first voltage is lower than the absolute value of its threshold level, and the first voltage is not supplied to the internal supply voltage generator.
Claim 17
Dependent Claim
66 words
The apparatus according to claim 14, wherein the selecting circuit further comprises an N-channel transistor which is connected at a terminal of source or drain to the first voltage generator and at the other terminal of drain or source to the internal supply voltage generator, so that the first voltage is supplied to the internal supply voltage generator even if the P-channel transistor is turned off.
Claim 18
Dependent Claim
103 words
A semiconductor integrated circuit, comprising: semiconductor devices; and an apparatus for generating an internal supply voltage for driving the semiconductor devices, wherein the internal supply voltage generator comprises: (1) a first voltage generator which generates a first voltage in response to a predetermined characteristic of the semiconductor integrated circuit; (2) a second voltage generator which generate a second voltage; (3) a selecting circuit which is supplied with the first voltage and the second voltage to select one from the first and second voltages; and (4) an internal supply voltage generator which is supplied with the selected voltage to generate an internal supply voltage.
Claim 19
Dependent Claim
103 words
A semiconductor integrated circuit, comprising: semiconductor devices; and an apparatus for generating an internal supply voltage for driving the semiconductor devices, wherein the internal supply voltage generator comprises: (1) a first voltage generator which generates a first voltage in response to a predetermined characteristic of the semiconductor integrated circuit; (2) a second voltage generator which generate a second voltage; (3) a selecting circuit which is supplied with the first voltage and the second voltage to select one from the first and second voltages; and (4) an internal supply voltage generator which is supplied with the selected voltage to generate an internal supply voltage.
Claim 20
Dependent Claim
33 words
The semiconductor integrated circuit according to claim 16, wherein in the apparatus for generating an internal supply voltage, the predetermined characteristic comprises the supply current and access time of the semiconductor integrated circuit.
Claim 21
Dependent Claim
26 words
The semiconductor integrated circuit according to claim 16, further comprising: a trimming circuit which trims the internal supply voltage in order to generate an optimum voltage.
Claim 22
Dependent Claim
25 words
The semiconductor integrated circuit according to claim 16, wherein in the apparatus for generating an internal supply voltage, the second voltage is fixed in level.
Claim 23
Dependent Claim
56 words
The semiconductor integrated circuit according to claim 16, wherein: the apparatus for generating an internal supply voltage further comprises a third voltage generator which generates a third voltage; and a voltage monitoring circuit which detects the level of the third voltage, wherein the selecting circuit operates in response to the output of the voltage monitoring circuit.
Claim 24
Dependent Claim
38 words
The semiconductor integrated circuit according to claim 20, wherein: the apparatus for generating an internal supply voltage further comprises a latch circuit which holds the output of the voltage monitoring circuit to be supplied to the selecting circuit.
Claim 25
Dependent Claim
42 words
The semiconductor integrated circuit according to claim 20, wherein in the apparatus for generating an internal supply voltage, the voltage monitoring circuit has a threshold voltage level of detection which is lower than an input voltage level of the semiconductor integrated circuit.
Claim 26
Dependent Claim
42 words
The semiconductor integrated circuit according to claim 20, wherein in the apparatus for generating an internal supply voltage, the voltage monitoring circuit has a threshold voltage level of detection which is higher than an input voltage level of the semiconductor integrated circuit.
Claim 27
Dependent Claim
81 words
The semiconductor integrated circuit according to claim 16, wherein in the apparatus for generating an internal supply voltage, the selecting circuit comprises a P-channel transistor which is connected at a source to the first voltage generator and at a drain to the internal supply voltage generator, so that the P-channel transistor is turned off when the first voltage is lower than the absolute value of its threshold level, and the first voltage is not supplied to the internal supply voltage generator.
Claim 28
Dependent Claim
68 words
The semiconductor integrated circuit according to claim 24, wherein in the apparatus for generating an internal supply voltage, the selecting circuit further comprises an N-channel transistor which is connected at a source to the first voltage generator and at a drain to the internal supply voltage generator, so that the first voltage is supplied to the internal supply voltage generator even if the P-channel transistor is turned off.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-23 | 2003-02-22 | 2003-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-23 | 2007-02-22 | 2007-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-23 | 2011-02-22 | 2011-08-24 | $7700.00 | Window Closed / Lapsed |