US5936906A
Expired / Lapsed
US
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Multilevel sense device for a flash memory
Assignee: Winbond Electronics Corp
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Filing: 1998-10-29
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Granted: 1999-08-10
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Expires: 2018-10-29
Abstract
Abstract A multilevel sense device for a flash memory according to the invention is disclosed. When reading multilevel digital data stored in a selected cell of a primary cells array, the primary cells array generates and transmits a sense current to a sense amplifier. Then, the sense current is compared with permanent currents pre-established by a reference cells array thereby to determine/fetch the digital data. Furthermore, in the multilevel sense device, multilevel digital data stored in a selected cell are totally read out in one time. This causes more reading time saved.
Inventors
- 👤 Huan-Chiu Tsen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:54
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/56; G11C11/5621; G11C11/5642; G11C2211/00; G11C2211/56; G11C2211/563; G11C2211/5634
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
152 words
A multilevel sense device for a flash memory which comprises a primary cells array having a plurality of word lines and bit lines, a word-line decoder coupled to the word lines of the primary cells array and a bit-line decoder coupled to the bit lines of the primary cells array, the multilevel sense device comprising: a reference cells array coupled to the primary cells array for sharing the word lines of the primary cells array and outputting a plurality of permanent reference currents thereby to create a plurality of current comparison intervals; a sense amplifier coupled to the primary cells array for receiving the permanent reference currents and a sense current output from a selected flash cell of the primary cells array and then comparing the sense current with the current comparison intervals thereby to determine/fetch digital data which are stored in the selected flash cell and corresponding to the sense current.
Claim 2
Dependent Claim
152 words
A multilevel sense device for a flash memory which comprises a primary cells array having a plurality of word lines and bit lines, a word-line decoder coupled to the word lines of the primary cells array and a bit-line decoder coupled to the bit lines of the primary cells array, the multilevel sense device comprising: a reference cells array coupled to the primary cells array for sharing the word lines of the primary cells array and outputting a plurality of permanent reference currents thereby to create a plurality of current comparison intervals; a sense amplifier coupled to the primary cells array for receiving the permanent reference currents and a sense current output from a selected flash cell of the primary cells array and then comparing the sense current with the current comparison intervals thereby to determine/fetch digital data which are stored in the selected flash cell and corresponding to the sense current.
Claim 3
Dependent Claim
32 words
The multilevel sense device as claimed in claim 1, further comprising a reference data input circuit coupled to the reference cells array for setting the reference value of the reference cells array.
Claim 4
Dependent Claim
24 words
The multilevel sense device as claimed in claim 1, further comprising a data input circuit coupled to the bit lines of the primary cells.
Claim 5
Dependent Claim
67 words
The multilevel sense device as claimed in claim 3, wherein the data input circuit further comprises a timing circuit, a pulse generator and a variable voltage generator, wherein the timing circuit is used to control the pulse generator to output a pulse signal to one of the bit lines and to control the variable voltage generator to output a step voltage to one of the word lines.
Claim 6
Dependent Claim
24 words
The multilevel sense device as claimed in claim 2, further comprising a data input circuit coupled to the bit lines of the primary cells.
Claim 7
Dependent Claim
62 words
The multilevel sense device as claimed in claim 5, wherein the data input circuit further comprises a timing circuit, a pulse generator and a variable voltage generator, wherein the timing circuit is used to control the pulse generator to output a pulse signal to one of the bit lines and to control the variable voltage generator to one of the word lines.
Claim 8
Dependent Claim
140 words
A multilevel sense device for flash memory, comprising: a primary cells array having a plurality of flash cells, a plurality of word lines and a plurality of bit lines, wherein each flash cell stores multilevel digital data and one of the flash cells creates a sense current when read; a reference cells array coupled to the primary cells array for sharing the word lines of the primary cells array and outputting a plurality of permanent reference currents to create a plurality of current comparison intervals; a sense amplifier coupled to the primary cells array for receiving the permanent reference currents and a sense current output from the read primary cells array and then comparing the sense current with the current comparison intervals thereby to determine/fetch digital data which are stored in the selected cell and corresponding to the sense current.
Claim 9
Dependent Claim
140 words
A multilevel sense device for flash memory, comprising: a primary cells array having a plurality of flash cells, a plurality of word lines and a plurality of bit lines, wherein each flash cell stores multilevel digital data and one of the flash cells creates a sense current when read; a reference cells array coupled to the primary cells array for sharing the word lines of the primary cells array and outputting a plurality of permanent reference currents to create a plurality of current comparison intervals; a sense amplifier coupled to the primary cells array for receiving the permanent reference currents and a sense current output from the read primary cells array and then comparing the sense current with the current comparison intervals thereby to determine/fetch digital data which are stored in the selected cell and corresponding to the sense current.
Claim 10
Dependent Claim
32 words
The multilevel sense device as claimed in claim 7, further comprising a word line decoder coupled to the word lines of the primary cells array for selecting one of the word lines.
Claim 11
Dependent Claim
32 words
The multilevel sense device as claimed in claim 7, further comprising a bit line decoder coupled to the bit lines of the primary cells array for selecting one of the bit lines.
Claim 12
Dependent Claim
24 words
The multilevel sense device as claimed in claim 7, further comprising a data input circuit coupled to the bit lines of the primary cells.
Claim 13
Dependent Claim
67 words
The multilevel sense device as claimed in claim 10, wherein the data input circuit further comprises a timing circuit, a pulse generator and a variable voltage generator, wherein the timing circuit is used to control the pulse generator to output a pulse signal to one of the bit lines and to control the variable voltage generator to output a step voltage to one of the word lines.
Claim 14
Dependent Claim
93 words
A multilevel sense method for a flash memory, wherein a selected flash cell has a word line and a bit line, the method comprising: applying a DC pule voltage on the bit line; applying a word line voltage on the word line; ending the sense operation when the selected flash cell creates a sense current thereby to fetch multilevel digital data which are stored in the selected flash memory while the word line voltage is added with one unity for further sensing when no sense current is created by the selected flash memory.
Claim 15
Dependent Claim
93 words
A multilevel sense method for a flash memory, wherein a selected flash cell has a word line and a bit line, the method comprising: applying a DC pule voltage on the bit line; applying a word line voltage on the word line; ending the sense operation when the selected flash cell creates a sense current thereby to fetch multilevel digital data which are stored in the selected flash memory while the word line voltage is added with one unity for further sensing when no sense current is created by the selected flash memory.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-09 | 2003-02-08 | 2003-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-09 | 2007-02-08 | 2007-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-09 | 2011-02-08 | 2011-08-10 | $7700.00 | Window Closed / Lapsed |