US5920244A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin-film multilayered electrode, high-frequency resonator, and high-frequency transmission line
Assignee: Murata Manufacturing Co Ltd
•
Filing: 1997-01-22
•
Granted: 1999-07-06
•
Expires: 2017-01-22
Abstract
Abstract An inexpensive and reliable thin-film multilayered electrode which is formable on a dielectric substrate such as a ceramic substrate. A thin-film multilayered electrode has thin-film conductors and thin-film dielectrics formed by alternately layering on a dielectric substrate with a predetermined dielectric constant. The dielectric constant for each of the thin-film dielectrics is selected such that the electromagnetic field created in the dielectric substrate and the electromagnetic field created in each of the thin-film dielectrics are substantially in phase with each other when the thin-film multilayered electrode is used at a predetermined frequency, and the film thickness of each of the thin-film dielectrics falls between 0.2 mu m and 2 mu m; and the film thickness of each of the thin-film conductors, other than a thin-film conductor formed most distant from the dielectric substrate, is thinner than the skin depth at the predetermined frequency.
Inventors
- 👤 Masato Kobayashi
- 👤 Yoshihiko Goto
- 👤 Yukio Yoshino
- 👤 Yuzo Katayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:06
CPC Classifications
H; H01; H01P; H01P3/00; H01P3/02; H01P3/08; H01P3/088; H01P1/00; H01P1/20; H01P1/201; H01P1/203; H01P7/00; H01P7/10; H01P1/20327; H01P1/20336; H01P1/20345
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
153 words
A thin-film multilayered electrode provided on a dielectric substrate, the dielectric substrate having a predetermined dielectric constant, the thin-film multilayered electrode comprising: plurality of thin-film conductors and a plurality of thin-film dielectrics alternately stacked on the dielectric substrate; wherein each of the thin-film dielectrics has a dielectric constant such that when the thin-film multilayered electrode is used at a predetermined frequency, an electromagnetic field created in the dielectric substrate and an electromagnetic field created in each of the thin-film dielectrics have substantially the same phase; wherein each of the thin-film dielectrics has a thickness in the range of 0.2 to 2 μm; and wherein each of the thin-film conductors other than an outermost one of the thin-film conductors located farthest from the dielectric substrate has a thickness smaller than a skin depth at said predetermined frequency, and said outermost thin-film conductor has a thickness greater than said skin depth at said predetermined frequency.
Claim 2
Dependent Claim
153 words
A thin-film multilayered electrode provided on a dielectric substrate, the dielectric substrate having a predetermined dielectric constant, the thin-film multilayered electrode comprising: plurality of thin-film conductors and a plurality of thin-film dielectrics alternately stacked on the dielectric substrate; wherein each of the thin-film dielectrics has a dielectric constant such that when the thin-film multilayered electrode is used at a predetermined frequency, an electromagnetic field created in the dielectric substrate and an electromagnetic field created in each of the thin-film dielectrics have substantially the same phase; wherein each of the thin-film dielectrics has a thickness in the range of 0.2 to 2 μm; and wherein each of the thin-film conductors other than an outermost one of the thin-film conductors located farthest from the dielectric substrate has a thickness smaller than a skin depth at said predetermined frequency, and said outermost thin-film conductor has a thickness greater than said skin depth at said predetermined frequency.
Claim 3
Dependent Claim
41 words
A thin-film multilayered electrode according to claim 1, wherein at least one of said thin-film dielectrics contains at least one of Al 2 O 3 , Ta 2 O 5 , SiO 2 , Si 3 N 4 , and MgO.
Claim 4
Dependent Claim
50 words
A thin-film multilayered electrode according to claim 2, wherein at least one of said thin-film dielectrics contains Ta 2 O 5 and SiO 2 , whereby the dielectric constant of said thin-film dielectrics is a function of the ratio of the Ta 2 O 5 and the SiO 2 .
Claim 5
Dependent Claim
54 words
A thin-film multilayered electrode according to claim 2, wherein at least one of said thin-film dielectrics contains Ta 2 O 5 and Al 2 O 3 , whereby the dielectric constant of said thin-film dielectrics is a function of the ratio of the Ta 2 O 5 and the Al 2 O 3 .
Claim 6
Dependent Claim
44 words
A thin-film multilayered electrode according to claim 2, wherein at least one of said thin-film dielectrics contains MgO and SiO 2 , whereby the dielectric constant of said thin-film dielectrics is a function of the ratio of the MgO and the SiO 2 .
Claim 7
Dependent Claim
41 words
A thin-film multilayered electrode according to claim 2, 3, 4, 5 or 1, wherein said thin-film conductors and thin-film dielectrics in said thin-film multilayered electrode comprise heat-treated conductive and dielectric material, and said dielectric substrate is a sintered dielectric ceramic substrate.
Claim 8
Dependent Claim
23 words
A thin-film multilayered electrode according to claim 6, wherein said dielectric ceramic of said dielectric substrate is based on (Zr, Sn)TiO 4 .
Claim 9
Dependent Claim
54 words
A high-frequency resonator comprising: a thin-film multilayered electrode provided on a dielectric substrate according to claim 2, 3, 4, 5 or 1; and a second electrode provided on an opposite side of said dielectric substrate from said thin-film multilayered electrode such that said thin-film multilayered electrode and said second electrode sandwich said dielectric substrate.
Claim 10
Dependent Claim
16 words
A high-frequency resonator according to claim 8, wherein said second electrode is a thin-film multilayered electrode.
Claim 11
Dependent Claim
23 words
A high-frequency resonator according to claim 9, wherein said thin-film multilayered electrode and said second electrode have substantially a same round cross-sectional shape.
Claim 12
Dependent Claim
55 words
A high-frequency transmission line comprising: a thin-film multilayered electrode provided on a dielectric substrate according to claim 2, 3, 4, 5 or 1; and a second electrode provided on an opposite side of said dielectric substrate from said thin-film multilayered electrode such that said thin-film multilayered electrode and said second electrode sandwich said dielectric substrate.
Claim 13
Dependent Claim
17 words
A high-frequency transmission line according to claim 11, wherein said second electrode is a thin-film multilayered electrode.
Claim 14
Dependent Claim
24 words
A high-frequency transmission line according to claim 12, wherein said thin-film multilayered electrode and said second electrode have substantially a same elongated cross-sectional shape.
References Cited (Backward Citations)
US2769148A
Cited
US2797393A
Cited
US2831921A
Cited
US5276412A
Cited
US5470808A
Cited
WO1995006336A1
Cited
AU6156694A
Cited
US5428326A
Cited
JPH08167804A
Cited
JPH08191208A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-07-05 | 2003-01-04 | 2003-07-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-07-05 | 2007-01-04 | 2007-07-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-07-05 | 2011-01-04 | 2011-07-06 | $7700.00 | Window Closed / Lapsed |