Method and apparatus for generating a low pressure plasma

Claim 2

A plasma ignition method in which an internal pressure of a process chamber and an internal pressure of an ignition chamber, which communicates with said process chamber through a nozzle, are reduced to a specified level, said method comprising the steps of: supplying a first gas to said ignition chamber until an internal gas pressure of said process chamber and said ignition chamber, respectively, reach a first pressure level and a second pressure level, which is lower than said first pressure level; generating an ignited plasma in said ignition chamber when power is supplied to a first coil arranged on an outer circumference of said ignition chamber; initiating generation of a plasma in said process chamber when said ignited plasma enters said process chamber through said nozzle, due to a difference in pressure between said first pressure level and said second pressure level, when power is supplied to a second coil arranged on an outer circumference of said process chamber; and gradually decreasing a supply of said first gas to said ignition chamber, and gradually increasing a supply of a second gas to said process chamber, in response to stabilization of a discharge for a generation of plasma in said process chamber.

Claim 3

A semiconductor manufacturing device which uses plasma, comprising: a process chamber; an ignition chamber connected to said process chamber in a manner such that ventilation is possible; a first gas supply means for supplying a first gas to said ignition chamber; a plasma ignition means for igniting a plasma with said first gas supplied to said ignition chamber by said first gas supply means; wherein generation of a plasma is initiated in said process chamber when a plasma in said ignition chamber that is ignited by said plasma ignition means is expelled into said process chamber due to a difference in pressure between an internal pressure of said ignition chamber and an internal pressure of said process chamber; a second gas supply means for supplying process gas and said plasma-generating gas to said process chamber; means for gradually decreasing a supply of said first gas to said ignition chamber when a discharge for generation of plasma in said process chamber becomes stable; and means for gradually increasing a supply of said second gas to said process chamber in an amount equivalent to said reduction of said first gas to said ignition chamber.

Claim 4

A semiconductor manufacturing device which uses plasma, comprising: a process chamber; an ignition chamber connected to said process chamber in a manner such that ventilation is possible; a first gas supply means for supplying a first gas to said ignition chamber; a plasma ignition means for igniting a plasma with said first gas supplied to said ignition chamber by said first gas supply means; wherein generation of a plasma is initiated in said process chamber when a plasma in said ignition chamber that is ignited by said plasma ignition means is expelled into said process chamber due to a difference in pressure between an internal pressure of said ignition chamber and an internal pressure of said process chamber; a second gas supply means for supplying process gas and said plasma-generating gas to said process chamber; means for gradually decreasing a supply of said first gas to said ignition chamber when a discharge for generation of plasma in said process chamber becomes stable; and means for gradually increasing a supply of said second gas to said process chamber in an amount equivalent to said reduction of said first gas to said ignition chamber.

Claim 5

The semiconductor manufacturing device of claim 2, wherein said process chamber is connected to said ignition chamber through a nozzle having a specified diameter in a manner such that ventilation is possible.

Claim 6

The semiconductor manufacturing device of claim 2, wherein said plasma ignition means further comprises: a coil arranged on an outer circumference of said ignition chamber; and an ignition power source means for supplying power to said coil.

Claim 7

The semiconductor manufacturing device of claim 1, further comprising: a coil arranged on an outer circumference of said process chamber; and a power source means for supplying power to said coil.

Claim 8

A semiconductor manufacturing device, comprising: an ignition chamber; a process chamber connected to said ignition chamber in a manner such that ventilation is possible; a pressure reducing means which reduces respective internal pressures of said ignition chamber and said process chamber to a specified level; a plasma-generating gas supply means for supplying a first gas to said ignition chamber until an internal gas pressure of said process chamber and said ignition chamber, respectively, reach a first pressure level and a second pressure level, which is lower than said first pressure level; an ignition plasma generating means, provided with a first coil arranged on an outer circumference of said ignition chamber, which generates ignited plasma in said ignition chamber by supplying power to said first coil; a plasma generating means provided with a processing coil arranged on an outer circumference of said process chamber, such that a plasma is generated in said process chamber when, due to the difference in pressure between said first pressure level and said second pressure level, said ignited plasma enters said process chamber through said nozzle when power is supplied to said processing coil; means for gradually decreasing a supply of said first gas to said ignition chamber according to said generation of plasma in said process chamber; and means for directing supply of a second gas to said process chamber in response to the generation of plasma in said process chamber, wherein a direct supply of said second gas to said process chamber is gradually increased, and a total amount of said first and second gas supplied to said process chamber is maintained almost constant.

Claim 9

A semiconductor manufacturing device, comprising: an ignition chamber; a process chamber connected to said ignition chamber in a manner such that ventilation is possible; a pressure reducing means which reduces respective internal pressures of said ignition chamber and said process chamber to a specified level; a plasma-generating gas supply means for supplying a first gas to said ignition chamber until an internal gas pressure of said process chamber and said ignition chamber, respectively, reach a first pressure level and a second pressure level, which is lower than said first pressure level; an ignition plasma generating means, provided with a first coil arranged on an outer circumference of said ignition chamber, which generates ignited plasma in said ignition chamber by supplying power to said first coil; a plasma generating means provided with a processing coil arranged on an outer circumference of said process chamber, such that a plasma is generated in said process chamber when, due to the difference in pressure between said first pressure level and said second pressure level, said ignited plasma enters said process chamber through said nozzle when power is supplied to said processing coil; means for gradually decreasing a supply of said first gas to said ignition chamber according to said generation of plasma in said process chamber; and means for directing supply of a second gas to said process chamber in response to the generation of plasma in said process chamber, wherein a direct supply of said second gas to said process chamber is gradually increased, and a total amount of said first and second gas supplied to said process chamber is maintained almost constant.