US5895944A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Charge coupled device image sensor and method of driving the same
Assignee: NEC Corp
•
Filing: 1997-11-04
•
Granted: 1999-04-20
•
Expires: 2017-11-04
Abstract
Abstract There is provided an imager sensor including a semiconductor substrate, a plurality of photodiode regions arranged on the semiconductor substrate in row and column directions, a plurality of charge transfer regions each disposed at a space between the photodiode regions in the row direction, the charge transfer regions transferring in the row direction signal charges generated from the photodiode regions, and an electrically conductive photoshield film covering the charge transfer regions therewith. Each of the charge transfer regions includes at least three independent transfer electrodes per a photodiode region. At least one of the three independent transfer electrodes is surrounded by the photodiode region to thereby have an isolated island shape, the rest of the transfer electrodes extend through a space between the photodiode regions in the column direction, and make electrical connection with a bus line disposed outside the semiconductor substrate. The electrically conductive photoshield film makes electrical connection with both the island-shaped transfer electrodes and the bus line. The image sensor has the less number of steps and more excellent optical characteristics than conventional ones.
Inventors
- 👤 Tohru Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:46
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; H10F39/1534; H10F39/151
Claims Analysis
Total Claims: 57
Claim 1
Independent Claim
198 words
An imager sensor comprising: (a) a semiconductor substrate; (b) a plurality of photodiode regions arranged on said semiconductor substrate in row and column directions; (c) a plurality of charge transfer regions each disposed at a space between said photodiode regions in said row direction, said charge transfer regions transferring in said row direction signal charges generated from said photodiode regions; and (d) an electrically conductive photoshield film covering said charge transfer regions therewith, each of said charge transfer regions comprising at least two layers from which transfer electrodes are formed, each of said charge transfer regions including at least three independent transfer electrodes per a photodiode region, at least one of said three independent transfer electrodes being surrounded by said photodiode regions to be formed in an isolated island shape, the rest of said three independent transfer electrodes extending through a space between said photodiode regions in said column direction, and making electrical connection with a bus line disposed outside said semiconductor substrate, said electrically conductive photoshield film making electrical connection with both said at least one of said three independent transfer electrodes and said bus line, a driving pulse being applied through said electrically conductive photoshield film.
Claim 2
Dependent Claim
198 words
An imager sensor comprising: (a) a semiconductor substrate; (b) a plurality of photodiode regions arranged on said semiconductor substrate in row and column directions; (c) a plurality of charge transfer regions each disposed at a space between said photodiode regions in said row direction, said charge transfer regions transferring in said row direction signal charges generated from said photodiode regions; and (d) an electrically conductive photoshield film covering said charge transfer regions therewith, each of said charge transfer regions comprising at least two layers from which transfer electrodes are formed, each of said charge transfer regions including at least three independent transfer electrodes per a photodiode region, at least one of said three independent transfer electrodes being surrounded by said photodiode regions to be formed in an isolated island shape, the rest of said three independent transfer electrodes extending through a space between said photodiode regions in said column direction, and making electrical connection with a bus line disposed outside said semiconductor substrate, said electrically conductive photoshield film making electrical connection with both said at least one of said three independent transfer electrodes and said bus line, a driving pulse being applied through said electrically conductive photoshield film.
Claim 3
Dependent Claim
33 words
The image sensor as set forth in claim 1, wherein said electrically conductive photoshield film makes electrical connection with said at least one of said three independent transfer electrodes through a contact hole.
Claim 4
Dependent Claim
35 words
The image sensor as set forth in claim 1, wherein an interlayer film formed between said electrically conductive photoshield film and said transfer electrodes is an insulating film having a dielectric constant smaller than 3.9.
Claim 5
Dependent Claim
18 words
The image sensor as set forth in claim 3, wherein said interlayer film is an amorphous carbon film.
Claim 6
Dependent Claim
17 words
The image sensor as set forth in claim 3, wherein said interlayer film is a SiOF film.
Claim 7
Dependent Claim
27 words
The image sensor as set forth in claim 3, wherein said interlayer film has a thickness in the range of 1000 angstroms to 3000 angstroms both inclusive.
Claim 8
Dependent Claim
40 words
The image sensor as set forth in claim 1, wherein an interlayer film formed between said electrically conductive photoshield film and said transfer electrodes is an insulating film having a smaller dielectric constant than that of a silicon dioxide film.
Claim 9
Dependent Claim
228 words
An imager sensor comprising: (a) a semiconductor substrate; (b) a plurality of photodiode regions arranged on said semiconductor substrate in row and column directions; (c) a plurality of charge transfer regions each disposed at a space between said photodiode regions in said row direction, said charge transfer regions transferring in said row direction signal charges generated from said photodiode regions; and (d) an electrically conductive photoshield film covering said charge transfer regions therewith, each of said charge transfer regions comprising at least two layers from which transfer electrodes are formed, each of said charge transfer regions including six independent transfer electrodes per two photodiode regions in said row direction, transfer electrodes disposed at (6N+1)th and (6N+4)th columns where N is zero or a positive integer being surrounded by said photodiode regions to be formed in an isolated island shape, and making electrical connection with said electrically conductive photoshield film, the rest of said six independent transfer electrodes extending through a space between said photodiode regions in said column direction, and making electrical connection with a bus line disposed outside said semiconductor substrate, a driving pulse being applied through said electrically conductive photoshield film, transfer electrodes disposed at (6N+1)th, (6N+3)th and (6N+5)th columns being formed of a first gate electrode film, and transfer electrodes disposed at (6N+2)th, (6N+4)th and (6N+6)th columns being formed of a second gate electrode film.
Claim 10
Dependent Claim
228 words
An imager sensor comprising: (a) a semiconductor substrate; (b) a plurality of photodiode regions arranged on said semiconductor substrate in row and column directions; (c) a plurality of charge transfer regions each disposed at a space between said photodiode regions in said row direction, said charge transfer regions transferring in said row direction signal charges generated from said photodiode regions; and (d) an electrically conductive photoshield film covering said charge transfer regions therewith, each of said charge transfer regions comprising at least two layers from which transfer electrodes are formed, each of said charge transfer regions including six independent transfer electrodes per two photodiode regions in said row direction, transfer electrodes disposed at (6N+1)th and (6N+4)th columns where N is zero or a positive integer being surrounded by said photodiode regions to be formed in an isolated island shape, and making electrical connection with said electrically conductive photoshield film, the rest of said six independent transfer electrodes extending through a space between said photodiode regions in said column direction, and making electrical connection with a bus line disposed outside said semiconductor substrate, a driving pulse being applied through said electrically conductive photoshield film, transfer electrodes disposed at (6N+1)th, (6N+3)th and (6N+5)th columns being formed of a first gate electrode film, and transfer electrodes disposed at (6N+2)th, (6N+4)th and (6N+6)th columns being formed of a second gate electrode film.
Claim 11
Dependent Claim
32 words
The image sensor as set forth in claim 8, wherein said transfer electrodes disposed at (6N+1)th and (6N+4)th columns make electrical connection with said electrically conductive photoshield film through a contact hole.
Claim 12
Dependent Claim
35 words
The image sensor as set forth in claim 8, wherein an interlayer film formed between said electrically conductive photoshield film and said transfer electrodes is an insulating film having a dielectric constant smaller than 3.9.
Claim 13
Dependent Claim
18 words
The image sensor as set forth in claim 10, wherein said interlayer film is an amorphous carbon film.
Claim 14
Dependent Claim
17 words
The image sensor as set forth in claim 10, wherein said interlayer film is a SiOF film.
Claim 15
Dependent Claim
27 words
The image sensor as set forth in claim 10, wherein said interlayer film has a thickness in the range of 1000 angstroms to 3000 angstroms both inclusive.
Claim 16
Dependent Claim
40 words
The image sensor as set forth in claim 8, wherein an interlayer film formed between said electrically conductive photoshield film and said transfer electrodes is an insulating film having a smaller dielectric constant than that of a silicon dioxide film.
Claim 17
Dependent Claim
35 words
The image sensor as set forth in claim 8, wherein said transfer electrodes disposed at (6N+2)th, (6N+4)th and (6N+6)th columns are formed in spaces between said transfer electrodes disposed at (6N+1)th, (6N+3)th and (6N+5)th columns.
Claim 18
Dependent Claim
41 words
The image sensor as set forth in claim 8, wherein said electrically conductive photoshield film disposed above said space between said photodiode regions in said column direction has a width in the range of 0.5 μm to 2 μm both inclusive.
Claim 19
Dependent Claim
32 words
The image sensor as set forth in claim 8, wherein said electrically conductive photoshield film is formed in stripes in said row direction so as to cover only said charge transfer regions.
Claim 20
Dependent Claim
46 words
The image sensor as set forth in claim 8, wherein said electrically conductive photoshield film is formed so as to cover said charge transfer regions and said space between said photodiode regions in said column direction, and so as to have openings above said photodiode regions.
Claim 21
Dependent Claim
45 words
The image sensor as set forth in claim 8, wherein said electrically conductive photoshield film on said transfer electrodes formed of said second gate electrode film is formed so as to cover a sidewall of said transfer electrodes formed of said first gate electrode film.
Claim 22
Dependent Claim
221 words
An imager sensor comprising: (a) a semiconductor substrate; (b) a plurality of photodiode regions arranged on said semiconductor substrate in row and column directions; (c) a plurality of charge transfer regions each disposed at a space between said photodiode regions in said row direction, said charge transfer regions transferring in said row direction signal charges generated from said photodiode regions; and (d) an electrically conductive photoshield film covering said charge transfer regions therewith, each of said charge transfer regions comprising at least two layers from which transfer electrodes are formed, each of said charge transfer regions including four independent transfer electrodes per a photodiode region, a transfer electrode disposed at (4N+1)th column where N is zero or a positive integer being surrounded by said photodiode regions to be formed in an isolated island shape, and making electrical connection with said electrically conductive photoshield film, the rest of said four independent transfer electrodes extending through a space between said photodiode regions in said column direction, and making electrical connection with a bus line disposed outside said semiconductor substrate, a driving pulse being applied through said electrically conductive photoshield film, transfer electrodes disposed at (4N+1)th and (4N+3)th columns being formed of a first gate electrode film, and transfer electrodes disposed at (4N+2)th and (4N+4)th columns being formed of a second gate electrode film.
Claim 23
Dependent Claim
221 words
An imager sensor comprising: (a) a semiconductor substrate; (b) a plurality of photodiode regions arranged on said semiconductor substrate in row and column directions; (c) a plurality of charge transfer regions each disposed at a space between said photodiode regions in said row direction, said charge transfer regions transferring in said row direction signal charges generated from said photodiode regions; and (d) an electrically conductive photoshield film covering said charge transfer regions therewith, each of said charge transfer regions comprising at least two layers from which transfer electrodes are formed, each of said charge transfer regions including four independent transfer electrodes per a photodiode region, a transfer electrode disposed at (4N+1)th column where N is zero or a positive integer being surrounded by said photodiode regions to be formed in an isolated island shape, and making electrical connection with said electrically conductive photoshield film, the rest of said four independent transfer electrodes extending through a space between said photodiode regions in said column direction, and making electrical connection with a bus line disposed outside said semiconductor substrate, a driving pulse being applied through said electrically conductive photoshield film, transfer electrodes disposed at (4N+1)th and (4N+3)th columns being formed of a first gate electrode film, and transfer electrodes disposed at (4N+2)th and (4N+4)th columns being formed of a second gate electrode film.
Claim 24
Dependent Claim
30 words
The image sensor as set forth in claim 20, wherein said transfer electrode disposed at (4N+1)th column makes electrical connection with said electrically conductive photoshield film through a contact hole.
Claim 25
Dependent Claim
35 words
The image sensor as set forth in claim 20, wherein an interlayer film formed between said electrically conductive photoshield film and said transfer electrodes is an insulating film having a dielectric constant smaller than 3.9.
Claim 26
Dependent Claim
18 words
The image sensor as set forth in claim 22, wherein said interlayer film is an amorphous carbon film.
Claim 27
Dependent Claim
17 words
The image sensor as set forth in claim 22, wherein said interlayer film is a SiOF film.
Claim 28
Dependent Claim
27 words
The image sensor as set forth in claim 22, wherein said interlayer film has a thickness in the range of 1000 angstroms to 3000 angstroms both inclusive.
Claim 29
Dependent Claim
40 words
The image sensor as set forth in claim 20, wherein an interlayer film formed between said electrically conductive photoshield film and said transfer electrodes is an insulating film having a smaller dielectric constant than that of a silicon dioxide film.
Claim 30
Dependent Claim
33 words
The image sensor as set forth in claim 20, wherein said transfer electrodes disposed at (4N+1)th and (4N+3)th columns are formed in spaces between said transfer electrodes disposed at (4N+2)th and (4N+4)th columns.
Claim 31
Dependent Claim
41 words
The image sensor as set forth in claim 20, wherein said electrically conductive photoshield film disposed above said space between said photodiode regions in said column direction has a width in the range of 0.5 μm to 2 μm both inclusive.
Claim 32
Dependent Claim
32 words
The image sensor as set forth in claim 20, wherein said electrically conductive photoshield film is formed in stripes in said row direction so as to cover only said charge transfer regions.
Claim 33
Dependent Claim
46 words
The image sensor as set forth in claim 20, wherein said electrically conductive photoshield film is formed so as to cover said charge transfer regions and said space between said photodiode regions in said column direction, and so as to have openings above said photodiode regions.
Claim 34
Dependent Claim
45 words
The image sensor as set forth in claim 20, wherein said electrically conductive photoshield film on said transfer electrodes formed of said second gate electrode film is formed so as to cover a sidewall of said transfer electrodes formed of said first gate electrode film.
Claim 35
Dependent Claim
244 words
An imager sensor comprising: (a) a semiconductor substrate; (b) a plurality of photodiode regions arranged on said semiconductor substrate in row and column directions; (c) a plurality of charge transfer regions each disposed at a space between said photodiode regions in said row direction, said charge transfer regions transferring in said row direction signal charges generated from said photodiode regions; and (d) an electrically conductive photoshield film covering said charge transfer regions therewith, each of said charge transfer regions comprising at least two layers from which transfer electrodes are formed, each of said charge transfer regions including four independent transfer electrodes per a photodiode region, transfer electrodes disposed at (4N+1)th and (4N+2)th columns where N is zero or a positive integer being surrounded by said photodiode regions to be formed in an isolated island shape, and making electrical connection with said electrically conductive photoshield film, transfer electrodes disposed at (4N+3)th and (4N+4)th columns extending through a space between said photodiode regions in said column direction, and making electrical connection with a bus line disposed outside said semiconductor substrate, a driving pulse being applied through said electrically conductive photoshield film, transfer electrodes disposed at (4N+2)th and (4N+4)th columns being formed of a first gate electrode film, and transfer electrodes disposed at (4N+1)th and (4N+3)th columns being formed of a second gate electrode film, said image sensor further comprising potential barrier regions in said semiconductor substrate below said transfer electrodes disposed at (4N+1)th and (4N+3)th columns.
Claim 36
Dependent Claim
244 words
An imager sensor comprising: (a) a semiconductor substrate; (b) a plurality of photodiode regions arranged on said semiconductor substrate in row and column directions; (c) a plurality of charge transfer regions each disposed at a space between said photodiode regions in said row direction, said charge transfer regions transferring in said row direction signal charges generated from said photodiode regions; and (d) an electrically conductive photoshield film covering said charge transfer regions therewith, each of said charge transfer regions comprising at least two layers from which transfer electrodes are formed, each of said charge transfer regions including four independent transfer electrodes per a photodiode region, transfer electrodes disposed at (4N+1)th and (4N+2)th columns where N is zero or a positive integer being surrounded by said photodiode regions to be formed in an isolated island shape, and making electrical connection with said electrically conductive photoshield film, transfer electrodes disposed at (4N+3)th and (4N+4)th columns extending through a space between said photodiode regions in said column direction, and making electrical connection with a bus line disposed outside said semiconductor substrate, a driving pulse being applied through said electrically conductive photoshield film, transfer electrodes disposed at (4N+2)th and (4N+4)th columns being formed of a first gate electrode film, and transfer electrodes disposed at (4N+1)th and (4N+3)th columns being formed of a second gate electrode film, said image sensor further comprising potential barrier regions in said semiconductor substrate below said transfer electrodes disposed at (4N+1)th and (4N+3)th columns.
Claim 37
Dependent Claim
32 words
The image sensor as set forth in claim 32, wherein said transfer electrodes disposed at (4N+1)th and (4N+2)th columns make electrical connection with said electrically conductive photoshield film through a contact hole.
Claim 38
Dependent Claim
35 words
The image sensor as set forth in claim 32, wherein an interlayer film formed between said electrically conductive photoshield film and said transfer electrodes is an insulating film having a dielectric constant smaller than 3.9.
Claim 39
Dependent Claim
18 words
The image sensor as set forth in claim 34, wherein said interlayer film is an amorphous carbon film.
Claim 40
Dependent Claim
17 words
The image sensor as set forth in claim 34, wherein said interlayer film is a SiOF film.
Claim 41
Dependent Claim
27 words
The image sensor as set forth in claim 34, wherein said interlayer film has a thickness in the range of 1000 angstroms to 3000 angstroms both inclusive.
Claim 42
Dependent Claim
40 words
The image sensor as set forth in claim 32, wherein an interlayer film formed between said electrically conductive photoshield film and said transfer electrodes is an insulating film having a smaller dielectric constant than that of a silicon dioxide film.
Claim 43
Dependent Claim
33 words
The image sensor as set forth in claim 32, wherein said transfer electrodes disposed at (4N+1)th and (4N+3)th columns are formed in spaces between said transfer electrodes disposed at (4N+2)th and (4N+4)th columns.
Claim 44
Dependent Claim
41 words
The image sensor as set forth in claim 32, wherein said electrically conductive photoshield film disposed above said space between said photodiode regions in said column direction has a width in the range of 0.5 μm to 2 μm both inclusive.
Claim 45
Dependent Claim
32 words
The image sensor as set forth in claim 32, wherein said electrically conductive photoshield film is formed in stripes in said row direction so as to cover only said charge transfer regions.
Claim 46
Dependent Claim
46 words
The image sensor as set forth in claim 32, wherein said electrically conductive photoshield film is formed so as to cover said charge transfer regions and said space between said photodiode regions in said column direction, and so as to have openings above said photodiode regions.
Claim 47
Dependent Claim
45 words
The image sensor as set forth in claim 32, wherein said electrically conductive photoshield film on said transfer electrodes formed of said second gate electrode film is formed so as to cover a sidewall of said transfer electrodes formed of said first gate electrode film.
Claim 48
Dependent Claim
36 words
The image sensor as set forth in claim 32, wherein said potential barrier regions are formed by ion-implanting impurities into said semiconductor substrate in self-aligned manner about said transfer electrodes disposed at (4N+2)th and (4N+4)th columns.
Claim 49
Independent Claim
290 words
A method of driving an image sensor comprising: (a) a semiconductor substrate; (b) a plurality of photodiode regions arranged on said semiconductor substrate in row and column directions; (c) a plurality of charge transfer regions each disposed at a space between said photodiode regions in said row direction, said charge transfer regions transferring in said row direction signal charges generated from said photodiode regions; and (d) an electrically conductive photoshield film covering said charge transfer regions therewith, each of said charge transfer regions comprising at least two layers from which transfer electrodes are formed, each of said charge transfer regions including six independent transfer electrodes per two photodiode regions in said row direction, transfer electrodes disposed at (6N+1)th and (6N+4)th columns where N is zero or a positive integer being surrounded by said photodiode regions to be formed in an isolated island shape, and making electrical connection with said electrically conductive photoshield film, the rest of said six independent transfer electrodes extending through a space between said photodiode regions in said column direction, and making electrical connection with a bus line disposed outside said semiconductor substrate, a driving pulse being applied through said electrically conductive photoshield film, transfer electrodes disposed at (6N+1)th, (6N+3)th and (6N+5)th columns being formed of a first gate electrode film, and transfer electrodes disposed at (6N+2)th, (6N+4)th and (6N+6)th columns being formed of a second gate electrode film, said method comprising the steps of: (a) applying a first phase driving pulse to said transfer electrodes disposed at (6N+1)th and (6N+4)th columns; (b) applying a second phase driving pulse to said transfer electrodes disposed at (6N+2)th and (6N+5)th columns; and (c) applying a third phase driving pulse to said transfer electrodes disposed at (6N+3)th and (6N+6)th columns.
Claim 50
Independent Claim
290 words
A method of driving an image sensor comprising: (a) a semiconductor substrate; (b) a plurality of photodiode regions arranged on said semiconductor substrate in row and column directions; (c) a plurality of charge transfer regions each disposed at a space between said photodiode regions in said row direction, said charge transfer regions transferring in said row direction signal charges generated from said photodiode regions; and (d) an electrically conductive photoshield film covering said charge transfer regions therewith, each of said charge transfer regions comprising at least two layers from which transfer electrodes are formed, each of said charge transfer regions including six independent transfer electrodes per two photodiode regions in said row direction, transfer electrodes disposed at (6N+1)th and (6N+4)th columns where N is zero or a positive integer being surrounded by said photodiode regions to be formed in an isolated island shape, and making electrical connection with said electrically conductive photoshield film, the rest of said six independent transfer electrodes extending through a space between said photodiode regions in said column direction, and making electrical connection with a bus line disposed outside said semiconductor substrate, a driving pulse being applied through said electrically conductive photoshield film, transfer electrodes disposed at (6N+1)th, (6N+3)th and (6N+5)th columns being formed of a first gate electrode film, and transfer electrodes disposed at (6N+2)th, (6N+4)th and (6N+6)th columns being formed of a second gate electrode film, said method comprising the steps of: (a) applying a first phase driving pulse to said transfer electrodes disposed at (6N+1)th and (6N+4)th columns; (b) applying a second phase driving pulse to said transfer electrodes disposed at (6N+2)th and (6N+5)th columns; and (c) applying a third phase driving pulse to said transfer electrodes disposed at (6N+3)th and (6N+6)th columns.
Claim 51
Dependent Claim
48 words
The method as set forth in claim 45, wherein a read-out pulse is applied to said transfer electrodes disposed at (6N+1)th and (6N+4)th columns through said electrically conductive photoshield film to read signal charges from said photodiode region including said transfer electrodes disposed at (6N+1)th and (6N+4)th columns.
Claim 52
Independent Claim
292 words
A method of driving an imager sensor comprising: (a) a semiconductor substrate; (b) a plurality of photodiode regions arranged on said semiconductor substrate in row and column directions; (c) a plurality of charge transfer regions each disposed at a space between said photodiode regions in said row direction, said charge transfer regions transferring in said row direction signal charges generated from said photodiode regions; and (d) an electrically conductive photoshield film covering said charge transfer regions therewith, each of said charge transfer regions comprising at least two layers from which transfer electrodes are formed, each of said charge transfer regions including four independent transfer electrodes per a photodiode region, a transfer electrode disposed at (4N+1)th column where N is zero or a positive integer being surrounded by said photodiode regions to be formed in an isolated island shape, and making electrical connection with said electrically conductive photoshield film, the rest of said six independent transfer electrodes extending through a space between said photodiode regions in said column direction, and making electrical connection with a bus line disposed outside said semiconductor substrate, a driving pulse being applied through said electrically conductive photoshield film, transfer electrodes disposed at (4N+1)th and (4N+3)th columns being formed of a first gate electrode film, and transfer electrodes disposed at (4N+2)th and (4N+4)th columns being formed of a second gate electrode film, said method comprising the steps of: (a) applying a first phase driving pulse to said transfer electrode disposed at (4N+1)th column; (b) applying a second phase driving pulse to said transfer electrode disposed at (4N+2)th column; (c) applying a third phase driving pulse to said transfer electrode disposed at (4N+3)th column; and (d) applying a first phase driving pulse to said transfer electrode disposed at (4N+4)th column.
Claim 53
Independent Claim
292 words
A method of driving an imager sensor comprising: (a) a semiconductor substrate; (b) a plurality of photodiode regions arranged on said semiconductor substrate in row and column directions; (c) a plurality of charge transfer regions each disposed at a space between said photodiode regions in said row direction, said charge transfer regions transferring in said row direction signal charges generated from said photodiode regions; and (d) an electrically conductive photoshield film covering said charge transfer regions therewith, each of said charge transfer regions comprising at least two layers from which transfer electrodes are formed, each of said charge transfer regions including four independent transfer electrodes per a photodiode region, a transfer electrode disposed at (4N+1)th column where N is zero or a positive integer being surrounded by said photodiode regions to be formed in an isolated island shape, and making electrical connection with said electrically conductive photoshield film, the rest of said six independent transfer electrodes extending through a space between said photodiode regions in said column direction, and making electrical connection with a bus line disposed outside said semiconductor substrate, a driving pulse being applied through said electrically conductive photoshield film, transfer electrodes disposed at (4N+1)th and (4N+3)th columns being formed of a first gate electrode film, and transfer electrodes disposed at (4N+2)th and (4N+4)th columns being formed of a second gate electrode film, said method comprising the steps of: (a) applying a first phase driving pulse to said transfer electrode disposed at (4N+1)th column; (b) applying a second phase driving pulse to said transfer electrode disposed at (4N+2)th column; (c) applying a third phase driving pulse to said transfer electrode disposed at (4N+3)th column; and (d) applying a first phase driving pulse to said transfer electrode disposed at (4N+4)th column.
Claim 54
Dependent Claim
44 words
The method as set forth in claim 47, wherein a read-out pulse is applied to said transfer electrode disposed at (4N+1)th column through said electrically conductive photoshield film to read signal charge from said photodiode region including said transfer electrode disposed at (4N+1)th column.
Claim 55
Independent Claim
289 words
A method of driving an imager sensor comprising: (a) a semiconductor substrate; (b) a plurality of photodiode regions arranged on said semiconductor substrate in row and column directions; (c) a plurality of charge transfer regions each disposed at a space between said photodiode regions in said row direction, said charge transfer regions transferring in said row direction signal charges generated from said photodiode regions; and (d) an electrically conductive photoshield film covering said charge transfer regions therewith, each of said charge transfer regions comprising at least two layers from which transfer electrodes are formed, each of said charge transfer regions including four independent transfer electrodes per a photodiode region, transfer electrodes disposed at (4N+1)th and (4N+2)th columns where N is zero or a positive integer being surrounded by said photodiode regions to be formed in an isolated island shape, and making electrical connection with said electrically conductive photoshield film, transfer electrodes disposed at (4N+3)th and (4N+4)th columns extending through a space between said photodiode regions in said column direction, and making electrical connection with a bus line disposed outside said semiconductor substrate, a driving pulse being applied through said electrically conductive photoshield film, transfer electrodes disposed at (4N+2)th and (4N+4)th columns being formed of a first gate electrode film, and transfer electrodes disposed at (4N+1)th and (4N+3)th columns being formed of a second gate electrode film, said image sensor further comprising potential barrier regions in said semiconductor substrate below said transfer electrodes disposed at (4N+1)th and (4N+3)th columns, said method comprising the steps of: (a) applying a first phase driving pulse to said transfer electrodes disposed at (4N+1)th and (4N+2)th columns; and (b) applying a second phase driving pulse to said transfer electrodes disposed at (4N+3)th and (4N+4)th columns.
Claim 56
Independent Claim
289 words
A method of driving an imager sensor comprising: (a) a semiconductor substrate; (b) a plurality of photodiode regions arranged on said semiconductor substrate in row and column directions; (c) a plurality of charge transfer regions each disposed at a space between said photodiode regions in said row direction, said charge transfer regions transferring in said row direction signal charges generated from said photodiode regions; and (d) an electrically conductive photoshield film covering said charge transfer regions therewith, each of said charge transfer regions comprising at least two layers from which transfer electrodes are formed, each of said charge transfer regions including four independent transfer electrodes per a photodiode region, transfer electrodes disposed at (4N+1)th and (4N+2)th columns where N is zero or a positive integer being surrounded by said photodiode regions to be formed in an isolated island shape, and making electrical connection with said electrically conductive photoshield film, transfer electrodes disposed at (4N+3)th and (4N+4)th columns extending through a space between said photodiode regions in said column direction, and making electrical connection with a bus line disposed outside said semiconductor substrate, a driving pulse being applied through said electrically conductive photoshield film, transfer electrodes disposed at (4N+2)th and (4N+4)th columns being formed of a first gate electrode film, and transfer electrodes disposed at (4N+1)th and (4N+3)th columns being formed of a second gate electrode film, said image sensor further comprising potential barrier regions in said semiconductor substrate below said transfer electrodes disposed at (4N+1)th and (4N+3)th columns, said method comprising the steps of: (a) applying a first phase driving pulse to said transfer electrodes disposed at (4N+1)th and (4N+2)th columns; and (b) applying a second phase driving pulse to said transfer electrodes disposed at (4N+3)th and (4N+4)th columns.
Claim 57
Dependent Claim
48 words
The method as set forth in claim 49, wherein a read-out pulse is applied to said transfer electrodes disposed at (4N+1)th and (4N+2)th columns through said electrically conductive photoshield film to read signal charges from said photodiode region including said transfer electrodes disposed at (4N+1)th and (4N+2)th columns.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-04-19 | 2002-10-19 | 2003-04-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-04-19 | 2006-10-19 | 2007-04-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-04-19 | 2010-10-19 | 2011-04-20 | $7700.00 | Window Closed / Lapsed |