Narrow isolation oxide process

Claim 2

In a process for fabricating submicron geometry semiconductor devices using field oxide isolation to define at least one active area surrounded by field oxide, the field oxide including a middle portion and tapered edge portions, and in which MOS transistors are formed using a spacer oxide layer to define spacer oxide walls adjacent to polysilicon gates, the process steps comprising: (a) anisotropically etching the spacer oxide layer to define the spacer oxide walls while preventing etching of portions of the spacer oxide layer lying over the field oxide to retain said portions intact, the etching laterally confining said retained oxide portions above at least the entire width of the middle portion the field oxide; (b) implanting dopants to form source and drain regions while blocking the implantation of dopants through the middle portion of the field oxide using said retained oxide portions of the spacer oxide layer; and (c) interconnecting transistor regions to form a functional device.

Claim 3

The process of claim 1 as applied in making CMOS integrated circuit devices wherein: step (a) is performed to form spacer oxide wall adjacent to polysilicon gates for both N-channel and P-channel transistors and to leave portions of the spacer oxide layer intact over the field oxide within areas that define both N-type wells and P-type wells; and step (b) is repeated to successively implant N-type dopants in the P-type wells and P-type dopants in the N-type wells.

Claim 4

The process of claim 2, wherein the N-type implant is performed into exposed P-type wells while a first patterned resist layer covers the N-type wells, and the P-type implant is performed into exposed N-type wells while a second patterned resist layer covers the P-type wells.

Claim 5

The process of claim 3, wherein the N-type implant comprises a double implant of phosphorus at a dose of about 2×10 14 ions/cm 2 and arsenic at a dose of about 5×10 15 ions/cm 2 .

Claim 6

The process of claim 2 wherein the field oxide has a lateral width of about 7000 Å and a final thickness of about 1600 Å.

Claim 7

The process of claim 5 wherein the spacer oxide layer has a thickness of about 1500 Å so that the combined oxide thickness of the spacer oxide layer and the underlying field oxide during the implant steps exceeds 3000 Å.

Claim 8

A semiconductor fabrication process comprising: providing a semiconductor substrate; growing a patterned field oxide to define active areas in an upper surface portion of the substrate, the field oxide having a middle portion and tapered edge portions; forming LDD transistors with polysilicon gates in the active areas using a first dose ion implantation followed by a second dose ion implantation, the second dose exceeding the first dose; after the first dose ion implantation and prior to the second dose ion implantation, anisotropically etching a spacer oxide layer to form spacer oxide walls adjacent to the polysilicon gates retaining portions of the spacer oxide layer intact over the patterned field oxide to prevent the second dose ion implantation from penetrating the field oxide, the etching laterally confining said retained oxide portions above the field oxide, said retained oxide portions extending from the tapered edge portions entirely across the middle portion of the field oxide.

Claim 9

A semiconductor fabrication process comprising: providing a semiconductor substrate; growing a patterned field oxide to define active areas in an upper surface portion of the substrate, the field oxide having a middle portion and tapered edge portions; forming LDD transistors with polysilicon gates in the active areas using a first dose ion implantation followed by a second dose ion implantation, the second dose exceeding the first dose; after the first dose ion implantation and prior to the second dose ion implantation, anisotropically etching a spacer oxide layer to form spacer oxide walls adjacent to the polysilicon gates retaining portions of the spacer oxide layer intact over the patterned field oxide to prevent the second dose ion implantation from penetrating the field oxide, the etching laterally confining said retained oxide portions above the field oxide, said retained oxide portions extending from the tapered edge portions entirely across the middle portion of the field oxide.

Claim 10

The process of claim 7 wherein the LDD transistors are formed by steps comprising: (a) growing a gate oxide in the active areas; (b) forming polysilicon gate strips to define the polysilicon gates in the active areas; (c) performing the first dose ion implantation step using the polysilicon gate strips to block implantation into the underlying substrate portions, the ion implantation step providing doped regions defining channels of the LDD transistors therebetween, the doped regions defining PN junctions in the active areas, whereby the portions of the PN junctions that define the channels will be self-aligned with respect to the edges of the polysilicon gate strips; (d) depositing the spacer oxide layer; (e) forming a photoresist mask on the spacer oxide layer overlying and conforming to the pattern of the patterned field oxide; (f) performing the anisotropic etching step; (g) removing the photoresist mask; and (h) performing the second dose ion implantation step to define source and drain regions of the LDD transistors in the active areas.

Claim 11

The process of claim 8 wherein the width of the field oxide is less than 2.5 times the width of the polysilicon gate strips.

Claim 12

The process of claim 9 wherein the field oxide is grown to an original maximum thickness in the thickest portions thereof of about 2500 Å, and subsequent processing steps reduce the maximum thickness to about 1600 Å.

Claim 13

The process of claim 10 wherein the width of the polysilicon gate strips is equal to about 3000 Å.

Claim 14

The process of claim 8 wherein a CMOS integrated circuit device is fabricated, and wherein steps (c) and (h) are repeated but using opposite conductivity type dopants to define both N-channel and P-channel transistors.

Claim 15

The process of claim 12 wherein submicron gate width transistors are formed, and wherein the width of the field oxide between adjacent active areas is less than 2.5 times the gate width.

Claim 16

A semiconductor process for fabricating a CMOS integrated circuit device, comprising: forming P-type and N-type wells in an upper silicon surface portion of a semiconductor substrate; growing a field oxide in a pattern to define active areas within the wells, the field oxide having a middle portion and tapered edge portions; growing gate oxide layers in the active areas, the gate oxide being thinner than the middle portion of the field oxide; depositing a polysilicon layer overlying the field oxide and gate oxide layers; selectively removing portions of the polysilicon layer to define polysilicon gates in the active areas, the polysilicon gates having a submicron gate width; selectively implanting a first dose of N-type dopants in the P-type wells and a first dose of P-type dopants in the N-type wells; depositing a spacer oxide layer; forming a patterned resist layer on the spacer oxide layer corresponding to the pattern of the field oxide; anisotropically etching the spacer oxide layer for a duration sufficient to reach the top surface of the polysilicon gates and surface portions of the substrate while leaving spacer oxide walls adjacent to the polysilicon gates and retaining portions of the spacer oxide layer intact under the patterned resist layer, the etching laterally confining said retained oxide portions above the field oxide, said retained oxide portions extending from the tapered edge portions entirely across the middle portion of the field oxide; removing the patterned resist layer; selectively implanting a second dose of N-type dopants in the P-type wells and a second dose of P-type dopants in the N-type wells using said retained oxide portions overlying the field oxide to block the implantation of dopants into the silicon portions underlying the field oxide; and forming interconnections among active areas to provide a functional integrated circuit device.

Claim 17

A semiconductor process for fabricating a CMOS integrated circuit device, comprising: forming P-type and N-type wells in an upper silicon surface portion of a semiconductor substrate; growing a field oxide in a pattern to define active areas within the wells, the field oxide having a middle portion and tapered edge portions; growing gate oxide layers in the active areas, the gate oxide being thinner than the middle portion of the field oxide; depositing a polysilicon layer overlying the field oxide and gate oxide layers; selectively removing portions of the polysilicon layer to define polysilicon gates in the active areas, the polysilicon gates having a submicron gate width; selectively implanting a first dose of N-type dopants in the P-type wells and a first dose of P-type dopants in the N-type wells; depositing a spacer oxide layer; forming a patterned resist layer on the spacer oxide layer corresponding to the pattern of the field oxide; anisotropically etching the spacer oxide layer for a duration sufficient to reach the top surface of the polysilicon gates and surface portions of the substrate while leaving spacer oxide walls adjacent to the polysilicon gates and retaining portions of the spacer oxide layer intact under the patterned resist layer, the etching laterally confining said retained oxide portions above the field oxide, said retained oxide portions extending from the tapered edge portions entirely across the middle portion of the field oxide; removing the patterned resist layer; selectively implanting a second dose of N-type dopants in the P-type wells and a second dose of P-type dopants in the N-type wells using said retained oxide portions overlying the field oxide to block the implantation of dopants into the silicon portions underlying the field oxide; and forming interconnections among active areas to provide a functional integrated circuit device.

Claim 18

The process of claim 14 wherein the width of the field oxide separating adjacent active areas is less than 2.5 times the gate width.

Claim 19

The process of claim 15 wherein the middle portion of the field oxide as initially grown is thinner than the gate width.

Claim 20

The process of claim 16 wherein the middle portion of the filled oxide as initially grown is about 2500 Å thick and is reduced in subsequent process steps to a thickness of about 1600 Å.

Claim 21

The process of claim 15 wherein the thickness of the spacer oxide layer is from about one-half to about two-thirds the dimension of the gate width.

Claim 22

The process of claim 18 wherein the thickness of the spacer oxide layer is from about 1500 Å to about 2000 Å.

Claim 23

The process of claim 15 wherein the thickness of the combined spacer oxide layer atop the field oxide layer used to block the implantation of the second doses of dopants is greater than 3000 Å.