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US5883839A Expired / Lapsed US ⏱️ 0.0 years remaining

Waveform stabilizing drive circuit for modularized memory

Assignee: Fujitsu Ltd
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Filing: 1997-10-07
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Granted: 1999-03-16
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Expires: 2017-10-07
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Abstract

Abstract A memory drive circuit includes at least one memory module constructed of a plurality of memory elements, a memory controller for driving said memory module, and a buffer, disposed between the memory module and the memory controller, for receiving a drive signal from the memory controller and transmitting the received drive signal to the memory module. Signal reflection noises produced in the memory module are absorbed by the buffer.

Inventors

  • 👤 Masaki Tosaka
  • 👤 Yuzo Usui
  • 👤 Noriyuki Matsui
  • 👤 Masao Matsuda
  • 👤 Kazunori Kasuga

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 12:46
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C5/00; G11C5/06; G11C5/063; G11C7/00; G11C7/22; G11C8/00; G11C8/18

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 72 words
A memory drive circuit comprising: a memory module including a plurality of memory elements; a memory controller driving said memory module; and a buffer, disposed between said memory module and said memory controller, receiving a drive signal from said memory controller and transmitting the received drive signal to said memory module, an output impedance of said buffer being matched to an impedance of a conductor connecting said buffer to said memory module.
Claim 2
Dependent Claim 72 words
A memory drive circuit comprising: a memory module including a plurality of memory elements; a memory controller driving said memory module; and a buffer, disposed between said memory module and said memory controller, receiving a drive signal from said memory controller and transmitting the received drive signal to said memory module, an output impedance of said buffer being matched to an impedance of a conductor connecting said buffer to said memory module.
Claim 3
Dependent Claim 75 words
A memory drive circuit according to claim 1, wherein: said memory module has an impedance in a predetermined range of impedances; the impedance of the conductor connecting said buffer to said memory module is set to a value falling within the predetermined range of impedances; and a transition time of the signal output from said buffer is set coincident to or larger than a time for which the signal is propagated through said memory module.
Claim 4
Dependent Claim 103 words
A memory drive circuit comprising: a memory module including a plurality of memory elements; a memory controller driving said memory module; and a buffer, disposed between said memory module and said memory controller, receiving a drive signal from said memory controller and transmitting the received drive signal to said memory module, an output impedance of said buffer being matched to an impedance of a conductor connecting said buffer to said memory module; and wherein the impedance of the conductor connecting said buffer to said memory module is set to a value falling within a range of impedances that said memory module can take.
Claim 5
Dependent Claim 103 words
A memory drive circuit comprising: a memory module including a plurality of memory elements; a memory controller driving said memory module; and a buffer, disposed between said memory module and said memory controller, receiving a drive signal from said memory controller and transmitting the received drive signal to said memory module, an output impedance of said buffer being matched to an impedance of a conductor connecting said buffer to said memory module; and wherein the impedance of the conductor connecting said buffer to said memory module is set to a value falling within a range of impedances that said memory module can take.
Claim 6
Dependent Claim 38 words
A memory drive circuit according to claim 3, wherein a transition time of the signal output from said buffer is set coincident to or larger than a time for which the signal is propagated through said memory module.
Claim 7
Dependent Claim 103 words
A memory drive circuit comprising: a memory module including a plurality of memory elements; a memory controller driving said memory module; and a buffer, disposed between said memory module and said memory controller, receiving a drive signal from said memory controller and transmitting the received drive signal to said memory module, an output impedance of said buffer being matched to an impedance of a conductor connecting said buffer to said memory module; and wherein a transition time of the signal output from said buffer is set coincident to or larger than a time for which the signal is propagated through said memory module.
Claim 8
Dependent Claim 103 words
A memory drive circuit comprising: a memory module including a plurality of memory elements; a memory controller driving said memory module; and a buffer, disposed between said memory module and said memory controller, receiving a drive signal from said memory controller and transmitting the received drive signal to said memory module, an output impedance of said buffer being matched to an impedance of a conductor connecting said buffer to said memory module; and wherein a transition time of the signal output from said buffer is set coincident to or larger than a time for which the signal is propagated through said memory module.
Claim 9
Dependent Claim 75 words
A memory drive circuit comprising: at least one connector to which a memory module is to be connected; a memory controller driving the memory module; and a buffer, disposed between said connector and said memory controller, receiving a drive signal from said memory controller and transmitting the received drive signal to the memory module, an output impedance of said buffer being matched to an impedance of a conductor connecting said buffer to said memory module.
Claim 10
Dependent Claim 75 words
A memory drive circuit comprising: at least one connector to which a memory module is to be connected; a memory controller driving the memory module; and a buffer, disposed between said connector and said memory controller, receiving a drive signal from said memory controller and transmitting the received drive signal to the memory module, an output impedance of said buffer being matched to an impedance of a conductor connecting said buffer to said memory module.
Claim 11
Dependent Claim 68 words
A memory drive circuit according to claim 6, wherein the impedance of the conductor connecting said buffer to the memory module is set to a value falling within a range of impedances that the memory module can take, and a transition time of the signal output from said buffer is set coincident to or larger than a time for which the signal is propagated through the memory module.
Claim 12
Dependent Claim 104 words
A memory drive circuit comprising: a connector to which a memory module is to be connected; a memory controller driving the memory module; and a buffer, disposed between said connector and said memory controller, receiving a drive signal from said memory controller and transmitting the received drive signal to the memory module, an output impedance of said buffer being matched to an impedance of a conductor connecting said buffer to the memory module; and wherein the impedance of the conductor connecting said buffer to the memory module is set to a value falling within a range of impedances that the memory module can take.
Claim 13
Dependent Claim 104 words
A memory drive circuit comprising: a connector to which a memory module is to be connected; a memory controller driving the memory module; and a buffer, disposed between said connector and said memory controller, receiving a drive signal from said memory controller and transmitting the received drive signal to the memory module, an output impedance of said buffer being matched to an impedance of a conductor connecting said buffer to the memory module; and wherein the impedance of the conductor connecting said buffer to the memory module is set to a value falling within a range of impedances that the memory module can take.
Claim 14
Dependent Claim 38 words
A memory drive circuit according to claim 8, wherein a transition time of the signal output from said buffer is set coincident to or larger than a time for which the signal is propagated through the memory module.

References Cited (Backward Citations)

JPH0325993A Cited
JPH0462895A Cited
JPH05143535A Cited
US5729764A Cited
US5727182A Cited
JPH09214076A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-03-15 2002-09-14 2003-03-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-03-15 2006-09-14 2007-03-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2010-03-15 2010-09-14 2011-03-16 $7700.00 Window Closed / Lapsed

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