US5877045A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a planar surface during multi-layer interconnect formation by a laser-assisted dielectric deposition
Assignee: Bell Semiconductor LLC
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Filing: 1996-04-10
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Granted: 1999-03-02
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Expires: 2016-04-10
Abstract
Abstract A method for depositing a planar dielectric layer between metal traces of a metallization layer of a semiconductor wafer is disclosed. A thin layer of light absorbing material is deposited on the surface of a wafer prior to the formation of metal lines on an overlying patterned metallization layer. A source of directed radiation preferentially heats the light absorbing material while the metal lines reflect the directed radiation and remain largely unheated, thereby allowing dielectric material to be evenly deposited between the metal traces. An isolation layer which insulates the metal traces from the layer of light absorbing material may be required. In some applications, the source of directed radiation is a laser source with a wavelength in the infrared range, and the light absorbing material is a material which absorbs light in this range.
Inventors
- 👤 Ashok K. Kapoor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 10:15
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/098; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/69394; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
81 words
A method of depositing a dielectric layer between metal lines of a patterned metallization layer, the method comprising the following steps: (a) providing a wafer having a substantially planar surface; (b) forming said patterned metallization layer to define said metal lines on said substantially planar surface; (c) selectively heating regions of said wafer lying between said metal lines while the metal lines remain substantially unheated; and (d) preferentially depositing the dielectric material in the heated regions lying between said metal lines.
Claim 2
Independent Claim
81 words
A method of depositing a dielectric layer between metal lines of a patterned metallization layer, the method comprising the following steps: (a) providing a wafer having a substantially planar surface; (b) forming said patterned metallization layer to define said metal lines on said substantially planar surface; (c) selectively heating regions of said wafer lying between said metal lines while the metal lines remain substantially unheated; and (d) preferentially depositing the dielectric material in the heated regions lying between said metal lines.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein the step of depositing the dielectric material is performed in a chemical vapor deposition reactor.
Claim 4
Dependent Claim
27 words
The method of claim 2 further including adjusting a concentration of gaseous species in said chemical vapor deposition reactor during said step of depositing a dielectric material.
Claim 5
Independent Claim
109 words
A method of depositing a dielectric layer between metal lines of a patterned metallization layer, the method comprising the following steps: (a) providing a wafer having a substantially planar surface; (b) forming a layer of amorphous silicon on said substantially planar surface; (c) forming a metallization layer on said layer of amorphous silicon; (d) patterning said metallization layer to form metal lines; (e) directing infra-red radiation onto said amorphous silicon, wherein the metal lines remain substantially unheated, while the amorphous silicon is heated; and (f) chemically vapor depositing a material having dielectric properties, whereby the material having dielectric properties is preferentially deposited in the regions between the metal lines.
Claim 6
Independent Claim
109 words
A method of depositing a dielectric layer between metal lines of a patterned metallization layer, the method comprising the following steps: (a) providing a wafer having a substantially planar surface; (b) forming a layer of amorphous silicon on said substantially planar surface; (c) forming a metallization layer on said layer of amorphous silicon; (d) patterning said metallization layer to form metal lines; (e) directing infra-red radiation onto said amorphous silicon, wherein the metal lines remain substantially unheated, while the amorphous silicon is heated; and (f) chemically vapor depositing a material having dielectric properties, whereby the material having dielectric properties is preferentially deposited in the regions between the metal lines.
Claim 7
Dependent Claim
32 words
A method as recited in claim 1 further including forming a layer of light-absorbing material on said substantially planar surface prior to forming the patterned metallization layer to define the metal lines.
Claim 8
Dependent Claim
14 words
A method as recited in claim 5 wherein the light-absorbing material is amorphous silicon.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-01 | 2002-08-31 | 2003-03-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-01 | 2006-08-31 | 2007-03-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-01 | 2010-08-31 | 2011-03-02 | $7700.00 | Window Closed / Lapsed |