US5877040A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making charge-coupled device with microlens
Assignee: Intellectual Ventures II LLC
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Filing: 1997-05-07
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Granted: 1999-03-02
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Expires: 2017-05-07
Abstract
Abstract A CCD and manufacturing method thereof is disclosed including: a first conductivity-type substrate having a convex portion; a first conductivity-type charge transmission domain formed on the substrate excluding the convex portion; a light detecting domain formed on the convex portion of the substrate and having a convex top surface; a second conductivity-type high-concentration impurity area formed on the top surface of the light detecting domain; a gate insulating layer formed on the substrate excluding the light detecting domain; a transmission gate formed on the gate insulating layer; a planarization layer formed on the substrate including the transmission gate; and a microlens formed on the planarization layer above a photodiode.
Inventors
- 👤 Chul Ho Park
- 👤 Kwang Bok Song
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:05
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/2823; H10F39/00; H10F39/011; H10F39/024; H10F39/80; H10F39/806; H10F39/8063; H10F77/00; H10F77/10; H10F77/14; H10F77/147; H10F77/40; H10F77/413; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
132 words
A method of manufacturing a CCD comprising the steps of: etching a first conductivity-type substrate to thereby form a convex portion; ion-implanting a first conductivity-type impurity into said substrate excluding said convex portion to thereby form a first conductivity-type charge transmission domain; sequentially forming a gate insulating layer and transmission gate on said substrate above said charge transmission domain; ion-implanting a first conductivity-type impurity into said convex portion of said substrate, using said transmission gate as a mask, to thereby form a convex light detecting area; ion-implanting a second conductivity-type high-concentration impurity into said light detecting area to thereby form a second conductivity-type high-concentration impurity area on the surface of said light detecting area; forming a planarization layer over said substrate; and forming a microlens on said planarization layer above a photodiode.
Claim 2
Independent Claim
132 words
A method of manufacturing a CCD comprising the steps of: etching a first conductivity-type substrate to thereby form a convex portion; ion-implanting a first conductivity-type impurity into said substrate excluding said convex portion to thereby form a first conductivity-type charge transmission domain; sequentially forming a gate insulating layer and transmission gate on said substrate above said charge transmission domain; ion-implanting a first conductivity-type impurity into said convex portion of said substrate, using said transmission gate as a mask, to thereby form a convex light detecting area; ion-implanting a second conductivity-type high-concentration impurity into said light detecting area to thereby form a second conductivity-type high-concentration impurity area on the surface of said light detecting area; forming a planarization layer over said substrate; and forming a microlens on said planarization layer above a photodiode.
Claim 3
Dependent Claim
85 words
A method of manufacturing a CCD as claimed in claim 1, wherein said step of forming said convex portion on said substrate comprises the substeps of: coating a microlens material on said substrate; patterning said microlens material to be left only on a portion corresponding to said light detecting area; thermally flowing said microlens material to thereby form said microlens on said substrate; dry-etching said substrate to thereby remove said microlens and simultaneously form a convex portion on a portion where said microlens is removed.
Claim 4
Dependent Claim
36 words
A method of manufacturing a CCD as claimed in claim 1, after the step of forming said transmission gate, further comprising a step of forming a light-shielding layer on said substrate excluding said light detecting area.
Claim 5
Dependent Claim
38 words
A method of manufacturing a CCD as claimed in claim 1, after the step of forming said planarization layer, further comprising a step of forming a color filter layer on said planarization layer above said light detecting area.
References Cited (Backward Citations)
US4694185A
Cited
US5118924A
Cited
US5306926A
Cited
US5514888A
Cited
US5312779A
Cited
US5583354A
Cited
US5371397A
Cited
US5479049A
Cited
US5672519A
Cited
US5677200A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-01 | 2002-08-31 | 2003-03-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-01 | 2006-08-31 | 2007-03-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-01 | 2010-08-31 | 2011-03-02 | $7700.00 | Window Closed / Lapsed |