US5872489A
Expired / Lapsed
US
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Integrated tunable inductance network and method
Assignee: Skyworks Solutions Inc
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Filing: 1997-04-28
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Granted: 1999-02-16
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Expires: 2017-04-28
Abstract
Abstract An integrated, tunable inductance network features a number of fixed inductors fabricated on a common substrate along with a switching network made up of a number of micro-electromechanical (MEM) switches. The switches selectably interconnect the inductors to form an inductance network having a particular inductance value, which can be set with a high degree of precision when the inductors are configured appropriately. The preferred MEM switches introduce a very small amount of resistance, and the inductance network can thus have a high Q. The MEM switches and inductors can be integrated using common processing steps, reducing parasitic capacitance problems associated with wire bonds and prior art switches, increasing reliability, and reducing the space, weight and power requirements of prior art designs. The precisely tunable high-Q inductance network has wide applicability, such as in a resonant circuit which provides a narrow bandwidth frequency response which peaks at a specific predetermined frequency, making possible a highly selective performance low noise amplifier (LNA), or in an oscillator circuit so that a precise frequency of oscillation can be generated and changed as needed.
Inventors
- 👤 Mau Chung F. Chang
- 👤 5th Henry O. Marcy
- 👤 Deepak Mehrotra
- 👤 Kenneth D. Pedrotti
- 👤 David R. Pehlke
- 👤 Charles W. Seabury
- 👤 Jun J. Yao
- 👤 James L. Bartlett
- 👤 J. L. Julian Tham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:05
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/56; H03F1/565; H03B; H03B5/00; H03B5/08; H03B5/12; H03B5/1237; H03B5/1256; H03F1/26; H03F3/00; H03F3/189; H03F3/19; H03F3/195; H10; H10D; H10D84/00; H01; H01H; H01H59/00; H01H59/0009; H03B2201/00; H03B2201/01; H03B2201/012; H03B2201/02; H03B2201/0208; H03B2201/0216; H03B2201/025; H03F2200/00; H03F2200/294; H03F2200/372; H03J; H03J2200/00; H03J2200/10; H03J2200/15
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
100 words
An integrated, tunable inductance network, comprising: a substrate, a plurality of inductors fabricated on said substrate, and a switching network-which is operable to interconnect selectable ones of said inductors to form an inductance network having an inductance value that depends upon the selected inductors, said inductance network having an input and output, said switching network comprising a plurality of micro-electromechanical (MEM) switches and integrated with said inductors on said substrate, each of said MEM switches switching in response to a respective control signal to set a total inductance across said input and output to one of a plurality of levels.
Claim 2
Dependent Claim
100 words
An integrated, tunable inductance network, comprising: a substrate, a plurality of inductors fabricated on said substrate, and a switching network-which is operable to interconnect selectable ones of said inductors to form an inductance network having an inductance value that depends upon the selected inductors, said inductance network having an input and output, said switching network comprising a plurality of micro-electromechanical (MEM) switches and integrated with said inductors on said substrate, each of said MEM switches switching in response to a respective control signal to set a total inductance across said input and output to one of a plurality of levels.
Claim 3
Dependent Claim
25 words
The integrated, tunable inductance network of claim 1, wherein said switching network is arranged to interconnect selected inductors in parallel to form said inductance network.
Claim 4
Dependent Claim
25 words
The integrated, tunable inductance network of claim 1, wherein said switching network is arranged to interconnect selected inductors in series to form said inductance network.
Claim 5
Dependent Claim
27 words
The integrated, tunable inductance network of claim 1, wherein said switching network is arranged to interconnect selected inductors in a series/parallel combination to form said inductance network.
Claim 6
Dependent Claim
19 words
The integrated, tunable inductance network of claim 1, wherein said common substrate is a semi-insulating gallium arsenide (GaAs) substrate.
Claim 7
Dependent Claim
16 words
The integrated, tunable inductance network of claim 1, wherein said common substrate is a glass substrate.
Claim 8
Dependent Claim
41 words
The integrated, tunable inductance network of claim 1, further comprising a control device connected to said switching network and arranged to operate said switching network to cause said inductance network to present a desired inductance value between said input and output.
Claim 9
Dependent Claim
45 words
The integrated, tunable inductance network of claim 7, wherein said switching network comprises a plurality of switches, and each of said plurality of switches is connected to said control device and arranged to operate in response to an actuation signal received from said control device.
Claim 10
Dependent Claim
25 words
The integrated, tunable inductance network of claim 7, wherein said control device is arranged to operate said switching network in response to an external input.
Claim 11
Dependent Claim
48 words
The integrated, tunable inductance network of claim 1, wherein said switching network includes a respective pair of switches for each of said inductors, each inductor connected in series between its respective switch pair, said pairs of switches operable to completely isolate their respective inductors from said inductance network.
Claim 12
Dependent Claim
16 words
The integrated, tunable inductance network of claim 1, wherein said inductors are elevated above said substrate.
Claim 13
Dependent Claim
122 words
An integrated, tunable inductance network, comprising: a plurality of inductors, a switching network which is operable to interconnect selectable ones of said inductors to form an inductance network having an inductance value that depends upon the selected inductors, said inductance network having an input and output, said switching network integrated with said inductors on a common substrate, a control device connected to said switching network and arranged to operate said switching network to cause said inductance network to present a desired inductance value between said input and output, and a memory device which is connected to said control device and arranged to cause said control device to configure said switching network to produce a desired inductance value between said input and output.
Claim 14
Dependent Claim
122 words
An integrated, tunable inductance network, comprising: a plurality of inductors, a switching network which is operable to interconnect selectable ones of said inductors to form an inductance network having an inductance value that depends upon the selected inductors, said inductance network having an input and output, said switching network integrated with said inductors on a common substrate, a control device connected to said switching network and arranged to operate said switching network to cause said inductance network to present a desired inductance value between said input and output, and a memory device which is connected to said control device and arranged to cause said control device to configure said switching network to produce a desired inductance value between said input and output.
Claim 15
Dependent Claim
110 words
An integrated, tunable inductance network, comprising: a plurality of inductors, and a switching network which is operable to interconnect selectable ones of said inductors to form an inductance network having an inductance value that depends upon the selected inductors, said inductance network having an input and output, said switching network including a respective pair of switches for each of said inductors, each inductor connected in series between its respective switch pair, said pairs of switches operable to completely isolate their respective inductors from said inductance network, each of said pairs of switches implemented with a single double-throw micro-electromechanical switch, said switching network integrated with said inductors on a common substrate.
Claim 16
Dependent Claim
110 words
An integrated, tunable inductance network, comprising: a plurality of inductors, and a switching network which is operable to interconnect selectable ones of said inductors to form an inductance network having an inductance value that depends upon the selected inductors, said inductance network having an input and output, said switching network including a respective pair of switches for each of said inductors, each inductor connected in series between its respective switch pair, said pairs of switches operable to completely isolate their respective inductors from said inductance network, each of said pairs of switches implemented with a single double-throw micro-electromechanical switch, said switching network integrated with said inductors on a common substrate.
Claim 17
Dependent Claim
139 words
A low noise amplifier (LNA) front end, comprising: an active device, and an integrated tunable inductance network which forms a resonant circuit which is connected to said active device, said inductance network comprising a plurality of fixed inductors and a switching network, said switching network operable to interconnect selectable ones of said fixed inductors to form an inductance network having an inductance value that depends upon the selected fixed inductors, said switching network, said active device, and said fixed inductors integrated together on a common substrate, said switching network comprising a plurality of micro-electromechanical (MEM) switches, each of said MEM switches switching in response to a respective control signal, said active device and inductance network forming an LNA front end having a frequency response which peaks at a frequency which depends on the inductance value of said inductance network.
Claim 18
Dependent Claim
139 words
A low noise amplifier (LNA) front end, comprising: an active device, and an integrated tunable inductance network which forms a resonant circuit which is connected to said active device, said inductance network comprising a plurality of fixed inductors and a switching network, said switching network operable to interconnect selectable ones of said fixed inductors to form an inductance network having an inductance value that depends upon the selected fixed inductors, said switching network, said active device, and said fixed inductors integrated together on a common substrate, said switching network comprising a plurality of micro-electromechanical (MEM) switches, each of said MEM switches switching in response to a respective control signal, said active device and inductance network forming an LNA front end having a frequency response which peaks at a frequency which depends on the inductance value of said inductance network.
Claim 19
Dependent Claim
16 words
The LNA of claim 14, wherein said common substrate is a semi-insulating gallium arsenide (GaAs) substrate.
Claim 20
Dependent Claim
33 words
The LNA of claim 14, further comprising a control device connected to said switching network and arranged to operate said switching network to cause said resonant circuit to resonate at a desired frequency.
Claim 21
Dependent Claim
22 words
The LNA of claim 16, wherein said control device is arranged to operate said switching network in response to an external input.
Claim 22
Dependent Claim
166 words
A low noise amplifier (LNA) front end, comprising: an active device, an integrated tunable inductance network which forms a resonant circuit which is connected to said active device, said inductance network comprising a plurality of fixed inductors and a switching network, said switching network operable to interconnect selectable ones of said fixed inductors to form an inductance network having an inductance value that depends upon the selected fixed inductors, said switching network integrated with said fixed inductors on a common substrate, said active device and inductance network forming an LNA front end having a frequency response which peaks at a frequency which depends on the inductance value of said inductance network, a control device connected to said switching network and arranged to operate said switching network to cause said resonant circuit to resonate at a desired frequency, and a memory device which is connected to said control device and arranged to cause said control device to configure said switching network to produce a desired inductance value.
Claim 23
Dependent Claim
166 words
A low noise amplifier (LNA) front end, comprising: an active device, an integrated tunable inductance network which forms a resonant circuit which is connected to said active device, said inductance network comprising a plurality of fixed inductors and a switching network, said switching network operable to interconnect selectable ones of said fixed inductors to form an inductance network having an inductance value that depends upon the selected fixed inductors, said switching network integrated with said fixed inductors on a common substrate, said active device and inductance network forming an LNA front end having a frequency response which peaks at a frequency which depends on the inductance value of said inductance network, a control device connected to said switching network and arranged to operate said switching network to cause said resonant circuit to resonate at a desired frequency, and a memory device which is connected to said control device and arranged to cause said control device to configure said switching network to produce a desired inductance value.
Claim 24
Dependent Claim
120 words
A tunable oscillator, comprising: an amplifier, and an integrated tunable inductance network which forms a resonant circuit connected to said amplifier, said inductance network comprising a plurality of fixed inductors and a switching network, said switching network operable to interconnect selectable ones of said fixed inductors to form an inductance network having an inductance value that depends upon the selected fixed inductors, said switching network comprising a plurality of micro-electromechanical (MEM) switches, each of said MEM switches switching in response to a respective control signal, said switching network integrated with said fixed inductors on a common substrate to form a tunable oscillator that produces an output signal having a frequency which varies with the inductance value of said inductance network.
Claim 25
Dependent Claim
120 words
A tunable oscillator, comprising: an amplifier, and an integrated tunable inductance network which forms a resonant circuit connected to said amplifier, said inductance network comprising a plurality of fixed inductors and a switching network, said switching network operable to interconnect selectable ones of said fixed inductors to form an inductance network having an inductance value that depends upon the selected fixed inductors, said switching network comprising a plurality of micro-electromechanical (MEM) switches, each of said MEM switches switching in response to a respective control signal, said switching network integrated with said fixed inductors on a common substrate to form a tunable oscillator that produces an output signal having a frequency which varies with the inductance value of said inductance network.
Claim 26
Independent Claim
94 words
A method of providing a precise inductance value, comprising the steps of: determining a desired inductance value, and electrically operating an integrated switching network to interconnect a plurality of integrated inductors into an inductance network having an inductance about equal to said desired inductance value, said switching network and said inductors integrated together on a common substrate, said switching network comprising a plurality of micro-electromechanical (MEM) switches, each of said MEM switches switching in response to a respective control signal to set the inductance of said network to one of a plurality of levels.
Claim 27
Independent Claim
94 words
A method of providing a precise inductance value, comprising the steps of: determining a desired inductance value, and electrically operating an integrated switching network to interconnect a plurality of integrated inductors into an inductance network having an inductance about equal to said desired inductance value, said switching network and said inductors integrated together on a common substrate, said switching network comprising a plurality of micro-electromechanical (MEM) switches, each of said MEM switches switching in response to a respective control signal to set the inductance of said network to one of a plurality of levels.
Claim 28
Dependent Claim
31 words
The method of claim 20, wherein said step of operating a switching network is performed by a control device arranged to operate said switching network in response to an external input.
Claim 29
Dependent Claim
37 words
The method of claim 20, wherein said step of operating a switching network is performed by a control device connected to a memory device which stores the switching network configuration necessary to achieve said desired inductance value.
Claim 30
Dependent Claim
58 words
The method of claim 20, wherein said switching network includes a respective pair of switches for each of said inductors, each inductor connected in series between its respective switch pair, said pairs of switches operable to completely isolate their respective inductors from said inductance network, each of said pairs of switches implemented with a single double-throw micro-electromechanical switch.
Claim 31
Dependent Claim
113 words
An inductor integrated with a micro-electromechanical (MEM) switch, comprising: a substrate, a first layer which comprises a bottom electrode for a MEM switch, at least one gapped signal line, and a center tap for an inductor, said first layer located on the surface of said substrate, a second layer which comprises a contact electrode for said MEM switch and the coils for said inductor, said second layer located above said first layer, a third layer which comprises a cantilever arm for said MEM switch, said third layer located above said second layer, and a fourth layer which comprises a top electrode for said MEM switch, said fourth layer located above said third layer.
Claim 32
Dependent Claim
113 words
An inductor integrated with a micro-electromechanical (MEM) switch, comprising: a substrate, a first layer which comprises a bottom electrode for a MEM switch, at least one gapped signal line, and a center tap for an inductor, said first layer located on the surface of said substrate, a second layer which comprises a contact electrode for said MEM switch and the coils for said inductor, said second layer located above said first layer, a third layer which comprises a cantilever arm for said MEM switch, said third layer located above said second layer, and a fourth layer which comprises a top electrode for said MEM switch, said fourth layer located above said third layer.
Claim 33
Dependent Claim
19 words
The integrated inductor and MEM switch of claim 24, wherein said substrate is a semi-insulating gallium arsenide (GaAs) substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-15 | 2002-08-17 | 2003-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-15 | 2006-08-17 | 2007-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-15 | 2010-08-17 | 2011-02-16 | $7700.00 | Window Closed / Lapsed |