US5861334A
Expired / Lapsed
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Method for fabricating semiconductor device having a buried channel
Assignee: SK Hynix Inc
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Filing: 1996-08-06
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Granted: 1999-01-19
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Expires: 2016-08-06
Abstract
Abstract A method for fabricating a semiconductor device having a buried channel structure, in which impurities having the same conductive type as a well are ion implanted, to increase the ion density beneath the buried channel, thereby enhancing the short channel characteristic and smooth on/off characteristic of MOSFET.
Inventors
- 👤 Kwang Myoung Rho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:02
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D30/01; H10D30/021; H10D30/0223; H10D30/637; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371; H10P10/00; H10P30/21; H10P30/212; H10P30/225
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
117 words
A method for fabricating a semiconductor device, comprising: forming a field oxide film on a first conductive type semiconductor substrate by a LOCOS process; forming a second conductive type profiled well in the first conductive type semiconductor substrate through high energy ion implantation; ion-implanting second conductive type impurities into an upper portion of the well, to compensate a second conductive type impurity density in a buried channel; forming the buried channel by ion implanting first conductive type impurities into the upper portion of the well with a lower implanting energy than the ion-implanting energy of the second conductive type impurities; and forming a gate oxide film and a gate electrode on the surface of the semiconductor substrate.
Claim 2
Independent Claim
117 words
A method for fabricating a semiconductor device, comprising: forming a field oxide film on a first conductive type semiconductor substrate by a LOCOS process; forming a second conductive type profiled well in the first conductive type semiconductor substrate through high energy ion implantation; ion-implanting second conductive type impurities into an upper portion of the well, to compensate a second conductive type impurity density in a buried channel; forming the buried channel by ion implanting first conductive type impurities into the upper portion of the well with a lower implanting energy than the ion-implanting energy of the second conductive type impurities; and forming a gate oxide film and a gate electrode on the surface of the semiconductor substrate.
Claim 3
Dependent Claim
25 words
A method in accordance with claim 1, wherein said first conductive type is a P type and said second conductive type is an N type.
Claim 4
Dependent Claim
33 words
A method in accordance with claim 1, wherein said second conductive type impurities are implanted by: using phosphorous as a source at a dose of 3×10 12 under an energy of 40 KeV.
Claim 5
Dependent Claim
32 words
A method in accordance with claim 1, wherein said buried channel is produced by: using BF 2 as a source at a dose of 8×10 12 under an energy of 20 KeV.
Claim 6
Independent Claim
112 words
A method for fabricating a semiconductor device, comprising: forming a field oxide film on a first conductive type semiconductor substrate by a LOCOS process; forming a second conductive type profiled well in the first conductive type semiconductor substrate through high energy ion implantation; forming a buried channel in an upper portion of the well by ion-implanting first; conductive type impurities into said wells: ion-implanting second conductive type impurities down to the region beneath the buried channel, to compensate a second conductive type impurity density between the buried channel and the upper portion of the well; and forming a gate oxide film and a gate electrode on the surface of the semiconductor substrate.
Claim 7
Independent Claim
112 words
A method for fabricating a semiconductor device, comprising: forming a field oxide film on a first conductive type semiconductor substrate by a LOCOS process; forming a second conductive type profiled well in the first conductive type semiconductor substrate through high energy ion implantation; forming a buried channel in an upper portion of the well by ion-implanting first; conductive type impurities into said wells: ion-implanting second conductive type impurities down to the region beneath the buried channel, to compensate a second conductive type impurity density between the buried channel and the upper portion of the well; and forming a gate oxide film and a gate electrode on the surface of the semiconductor substrate.
Claim 8
Dependent Claim
25 words
A method in accordance with claim 5, wherein: said first conductive type is a P type and said second conductive type is an N type.
Claim 9
Dependent Claim
33 words
A method in accordance with claim 5, wherein said second conductive type impurities are implanted by: using phosphorous as a source at a dose of 3×10 12 under an energy of 40 KeV.
Claim 10
Dependent Claim
32 words
A method in accordance with claim 5, wherein said buried channel is produced by: using BF 2 as a source at a dose of 8×10 12 under an energy of 20 KeV.
Claim 11
Independent Claim
114 words
A method for fabricating a semiconductor device, comprising: forming a field oxide film on a P type semiconductor substrate by a LOCOS process; forming an N well in the substrate through high energy ion implantation; ion-implanting N type impurities with a dose of at a dose of 3×10 12 under an energy of 40 KeV into the well, to compensate an N type impurity density in a buried channel; forming the buried channel by ion implanting P type impurities at a dose of 8×10 12 under an energy of 20 KeV at an upper portion of the well; and forming a gate oxide film and a gate electrode on the surface of the substrate.
Claim 12
Independent Claim
114 words
A method for fabricating a semiconductor device, comprising: forming a field oxide film on a P type semiconductor substrate by a LOCOS process; forming an N well in the substrate through high energy ion implantation; ion-implanting N type impurities with a dose of at a dose of 3×10 12 under an energy of 40 KeV into the well, to compensate an N type impurity density in a buried channel; forming the buried channel by ion implanting P type impurities at a dose of 8×10 12 under an energy of 20 KeV at an upper portion of the well; and forming a gate oxide film and a gate electrode on the surface of the substrate.
Claim 13
Independent Claim
120 words
A method for fabricating a semiconductor device, comprising: forming a field oxide film on a P type semiconductor substrate by a LOCOS process; forming an N well in the substrate through high energy ion implantation; forming a buried channel by ion implanting P type impurities at a dose of 8×10 12 under an energy of 20 KeV at an upper portion of the well; ion implanting N type impurities at a dose of 3×10 12 under an energy of 40 KeV into the N well, to compensate an N type impurity density between the buried channel and the upper portion of the N well; and forming a gate oxide film and a gate electrode on the surface of the substrate.
Claim 14
Independent Claim
120 words
A method for fabricating a semiconductor device, comprising: forming a field oxide film on a P type semiconductor substrate by a LOCOS process; forming an N well in the substrate through high energy ion implantation; forming a buried channel by ion implanting P type impurities at a dose of 8×10 12 under an energy of 20 KeV at an upper portion of the well; ion implanting N type impurities at a dose of 3×10 12 under an energy of 40 KeV into the N well, to compensate an N type impurity density between the buried channel and the upper portion of the N well; and forming a gate oxide film and a gate electrode on the surface of the substrate.
References Cited (Backward Citations)
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