US5858623A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for attenuating photoresist layer outgassing
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1997-04-07
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Granted: 1999-01-12
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Expires: 2017-04-07
Abstract
Abstract A method for forming a patterned photoresist layer. There is first provided a substrate. There is then formed over the substrate a blanket photoresist layer. The blanket photoresist layer is then implanted with a first ion beam to form an ion implanted blanket photoresist layer. The first ion beam employs a first ion having a first energy and a first dose sufficient such that an ion implanted patterned photoresist layer formed from the ion implanted blanket photoresist layer will not substantially outgas when the ion implanted patterned photoresist layer is exposed to a second beam. The ion implanted blanket photoresist layer is then patterned to form the ion implanted patterned photoresist layer. The method may be employed in selective high energy beam processing of the substrate. The method is particularly suited to selective high energy ion implant processing of semiconductor substrates employed within integrated circuit microelectronics fabrications.
Inventors
- 👤 Chen-Hua Yu
- 👤 Syun-Ming Jang
- 👤 Tsung-Hou Li
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 13:51
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/16; G03F7/168; G03F7/26; H; H10; H10P; H10P30/00; H10P30/20; H10P30/22
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
116 words
A method for forming a patterned photoresist layer comprising: providing a substrate; forming over the substrate a blanket photoresist layer; implanting the blanket photoresist layer with a first ion beam to form an ion implanted blanket photoresist layer, the first ion beam employing a first ion having a first energy and a first dose sufficient such that an ion implanted patterned photoresist layer formed from the ion implanted blanket photoresist layer will not substantially outgas when the ion implanted patterned photoresist layer is exposed to a second beam; patterning then the ion implanted blanket photoresist layer to form the ion implanted patterned photoresist layer; and exposing the ion implanted patterned photoresist layer to the second beam.
Claim 2
Independent Claim
116 words
A method for forming a patterned photoresist layer comprising: providing a substrate; forming over the substrate a blanket photoresist layer; implanting the blanket photoresist layer with a first ion beam to form an ion implanted blanket photoresist layer, the first ion beam employing a first ion having a first energy and a first dose sufficient such that an ion implanted patterned photoresist layer formed from the ion implanted blanket photoresist layer will not substantially outgas when the ion implanted patterned photoresist layer is exposed to a second beam; patterning then the ion implanted blanket photoresist layer to form the ion implanted patterned photoresist layer; and exposing the ion implanted patterned photoresist layer to the second beam.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein the substrate is chosen from the group of substrates consisting of conductor substrates, semiconductor substrates and insulator substrates.
Claim 4
Dependent Claim
42 words
The method of claim 1 wherein the substrate is employed within a microelectronics fabrication selected from the group of microelectronics fabrications consisting of integrated circuit microelectronics fabrications, ceramic substrate packaging microelectronics fabrications, solar cell microelectronics fabrications and flat panel display microelectronics fabrications.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein the first ion is electrically active with respect to the substrate.
Claim 6
Dependent Claim
57 words
The method of claim 1 wherein the second beam is a high energy beam selected from the group of high energy beams consisting of high energy radiation beams, high energy particle beams, and high energy ion beams consisting of high energy ion implantation beams, high energy ion assisted etch beams and high energy ion assisted deposition beams.
Claim 7
Dependent Claim
17 words
The method of claim 1 wherein the first ion is electrically inactive with respect to the substrate.
Claim 8
Dependent Claim
130 words
A ion beam method for selectively processing a substrate comprising: providing a substrate; forming over the substrate a blanket photoresist layer; implanting the blanket photoresist layer with a first ion beam to form an ion implanted blanket photoresist layer, the first ion beam employing a first ion having a first energy and a first dose sufficient such that an ion implanted patterned photoresist layer formed from the ion implanted blanket photoresist layer will not substantially outgas when the ion implanted patterned photoresist layer is exposed to a second ion beam; patterning then the ion implanted blanket photoresist layer to form the ion implanted patterned photoresist layer and simultaneously expose a first portion of the substrate; and processing selectively then the first portion of the substrate employing the second ion beam.
Claim 9
Dependent Claim
130 words
A ion beam method for selectively processing a substrate comprising: providing a substrate; forming over the substrate a blanket photoresist layer; implanting the blanket photoresist layer with a first ion beam to form an ion implanted blanket photoresist layer, the first ion beam employing a first ion having a first energy and a first dose sufficient such that an ion implanted patterned photoresist layer formed from the ion implanted blanket photoresist layer will not substantially outgas when the ion implanted patterned photoresist layer is exposed to a second ion beam; patterning then the ion implanted blanket photoresist layer to form the ion implanted patterned photoresist layer and simultaneously expose a first portion of the substrate; and processing selectively then the first portion of the substrate employing the second ion beam.
Claim 10
Dependent Claim
24 words
The method of claim 7 wherein the substrate is chosen from the group of substrates consisting of conductor substrates, semiconductor substrates and insulator substrates.
Claim 11
Dependent Claim
42 words
The method of claim 7 wherein the substrate is employed within a microelectronics fabrication selected from the group of microelectronics fabrications consisting of integrated circuit microelectronics fabrications, ceramic substrate packaging microelectronics fabrications, solar cell microelectronics fabrications and flat panel display microelectronics fabrications.
Claim 12
Dependent Claim
17 words
The method of claim 7 wherein the first ion is electrically active with respect to the substrate.
Claim 13
Dependent Claim
45 words
The method of claim 7 wherein the second ion beam is a high energy ion beam selected from the group of high energy ion beams consisting of high energy ion implantation beams, high energy ion assisted etch beams and high energy ion assisted deposition beams.
Claim 14
Dependent Claim
17 words
The method of claim 7 wherein the first ion is electrically inactive with respect to the substrate.
Claim 15
Independent Claim
150 words
A method for selectively ion implanting a semiconductor substrate comprising: providing a semiconductor substrate; forming over the semiconductor substrate a blanket photoresist layer; implanting the blanket photoresist layer with a first ion beam to form an ion implanted blanket photoresist layer, the first ion beam employing a first ion having a first energy and a first dose sufficient such that an ion implanted patterned photoresist layer formed from the ion implanted blanket photoresist layer will not substantially outgas when the ion implanted patterned photoresist layer is exposed to a second ion beam employing a second ion having a second energy and a second dose; patterning then the ion implanted blanket photoresist layer to form the ion implanted patterned photoresist layer and simultaneously expose a first portion of the semiconductor substrate; and implanting selectively the first portion of the semiconductor substrate with the second ion while employing the second ion beam.
Claim 16
Independent Claim
150 words
A method for selectively ion implanting a semiconductor substrate comprising: providing a semiconductor substrate; forming over the semiconductor substrate a blanket photoresist layer; implanting the blanket photoresist layer with a first ion beam to form an ion implanted blanket photoresist layer, the first ion beam employing a first ion having a first energy and a first dose sufficient such that an ion implanted patterned photoresist layer formed from the ion implanted blanket photoresist layer will not substantially outgas when the ion implanted patterned photoresist layer is exposed to a second ion beam employing a second ion having a second energy and a second dose; patterning then the ion implanted blanket photoresist layer to form the ion implanted patterned photoresist layer and simultaneously expose a first portion of the semiconductor substrate; and implanting selectively the first portion of the semiconductor substrate with the second ion while employing the second ion beam.
Claim 17
Dependent Claim
21 words
The method of claim 13 wherein the thickness of the blanket photoresist layer is from about 5000 to about 40000 angstroms.
Claim 18
Dependent Claim
51 words
The method of claim 14 wherein: the first ion is selected from the group of ions consisting of boron ions and phosphorus ions; the first energy is from about 50 to about 1000 keV; and the first dose is from about 2×10 14 to about 1×10 15 ions per square centimeter.
Claim 19
Dependent Claim
53 words
The method of claim 15 wherein: the second ion is selected from the group of ions consisting of arsenic ions, boron ions and phosphorus ions; the second energy is from about 50 to about 3000 keV; and the second dose is from about 1×10 12 to about 1×10 16 ions per square centimeter.
References Cited (Backward Citations)
US4851691A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-01-11 | 2002-07-13 | 2003-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-11 | 2006-07-13 | 2007-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-11 | 2010-07-13 | 2011-01-12 | $7700.00 | Window Closed / Lapsed |