Patent US2837127A successfully refreshed from Google Patents.
US5843845A
Expired / Lapsed
US
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Method for forming sloped contact hole for semiconductor device
Assignee: SK Hynix Inc
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Filing: 1996-12-27
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Granted: 1998-12-01
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Expires: 2016-12-27
Abstract
Abstract A method for forming a contact hole for a semiconductor device includes forming an insulation layer on a substrate and forming a photoresist film pattern on the insulation layer and exposing a portion of the insulation layer corresponding to the photoresist film pattern. The insulation layer is etched using the photoresist film pattern as a mask using a high density plasma etcher of an inductively coupled plasma type. The photoresist film is removed to form a contact hole having a sloped side wall.
Inventors
- 👤 Seong Woo Chung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:54
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10W20/01; H10W20/071; H10W20/081; H10W20/082
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
119 words
A method for forming a contact hole for a semiconductor device, the method comprising the steps of: forming an insulation layer on a substrate; forming a photoresist film pattern on the insulation layer and exposing a portion of the insulation layer corresponding to the photoresist film pattern; etching the insulation layer using the photoresist film pattern as a mask and using an inductively coupled plasma in the environment of a chemical gas combination including one of C 2 F 6 /polymer formation gas or C 3 F 8 /polymer formation gas, wherein each polymer formation gas includes one of CO or CH 3 F; and removing the photoresist film to form a contact hole having a sloped side wall.
Claim 2
Independent Claim
119 words
A method for forming a contact hole for a semiconductor device, the method comprising the steps of: forming an insulation layer on a substrate; forming a photoresist film pattern on the insulation layer and exposing a portion of the insulation layer corresponding to the photoresist film pattern; etching the insulation layer using the photoresist film pattern as a mask and using an inductively coupled plasma in the environment of a chemical gas combination including one of C 2 F 6 /polymer formation gas or C 3 F 8 /polymer formation gas, wherein each polymer formation gas includes one of CO or CH 3 F; and removing the photoresist film to form a contact hole having a sloped side wall.
Claim 3
Dependent Claim
32 words
The method according to claim 1, wherein the C 2 F 6 /polymer formation gas combination contains an amount of C 2 F 6 in a range of about 10 sccm-100 sccm.
Claim 4
Dependent Claim
32 words
The method according to claim 1, wherein the C 3 F 8 /polymer formation gas combination contains an amount of C 3 F 8 in a range of about 10 sccm-100 sccm.
Claim 5
Dependent Claim
31 words
The method according to claim 1, wherein the C 2 F 6 /polymer formation gas combination contains an amount of polymer formation gas in a range of about 10 sccm-100 sccm.
Claim 6
Dependent Claim
31 words
The method according to claim 1, wherein the C 3 F 8 /polymer formation gas combination contains an amount of polymer formation gas in a range of about 10 sccm-100 sccm.
Claim 7
Dependent Claim
69 words
The method according to claim 1, wherein the etching step is performed with an inductively coupled plasma device having an induction coil where a source power is applied, an electrode coupled to the substrate where a bias power is applied, a roof coupled to the induction coil, and a chamber wall, wherein the bias power is about 700 W-1500 W and the source power is about 1800 W-3000 W.
Claim 8
Dependent Claim
50 words
The method according to claim 1, wherein the etching step is performed with an inductively coupled plasma device having a roof and a chamber wall, wherein the roof has a temperature in the range of about 250° C.-270° C. and the chamber wall has a temperature of about 220° C.
Claim 9
Dependent Claim
17 words
The method according to claim 1, wherein the insulation layer is formed with a silicon oxide film.
Claim 10
Independent Claim
128 words
A method for forming a contact hole for a semiconductor device, the method comprising the steps of: forming an insulating layer on a substrate; forming a photoresist film pattern on the insulating layer and exposing a portion of the insulating layer corresponding to the photoresist pattern; etching the insulation layer using the photoresist film pattern as a mask using a plasma etcher under a gas environment including a gas combination of a polymer formation gas and one of C 2 F 6 or C 3 F 8 , a bias power of about 700 W-1500 W applied to the etcher, and a source power of about 800 W-3000 W applied to the etcher; and removing the photoresist film to form a contact hole having a sloped side wall.
Claim 11
Independent Claim
128 words
A method for forming a contact hole for a semiconductor device, the method comprising the steps of: forming an insulating layer on a substrate; forming a photoresist film pattern on the insulating layer and exposing a portion of the insulating layer corresponding to the photoresist pattern; etching the insulation layer using the photoresist film pattern as a mask using a plasma etcher under a gas environment including a gas combination of a polymer formation gas and one of C 2 F 6 or C 3 F 8 , a bias power of about 700 W-1500 W applied to the etcher, and a source power of about 800 W-3000 W applied to the etcher; and removing the photoresist film to form a contact hole having a sloped side wall.
Claim 12
Dependent Claim
19 words
The method according to claim 9, wherein the polymer formation gas includes one of CO or CH 3 F.
Claim 13
Dependent Claim
31 words
The method according to claim 9, wherein the gas combination contains an amount of C 2 F 6 or C 3 F 8 in a range of about 10 sccm-100 sccm.
Claim 14
Dependent Claim
25 words
The method according to claim 9, wherein the gas combination contains an amount of polymer formation gas in a range of about 10 sccm-100 sccm.
Claim 15
Dependent Claim
39 words
The method according to claim 9, wherein the etching step is performed with a roof temperature of the etcher in the range of about 250° C.-270° C. and a chamber wall temperature of the etcher of about 220° C.
Claim 16
Dependent Claim
17 words
The method according to claim 9, wherein the insulation layer is formed with a silicon oxide film.
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| 3.5 Years (Year 4) | 2001-11-30 | 2002-06-01 | 2002-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-30 | 2006-06-01 | 2006-12-01 | $3760.00 | Window Closed / Lapsed |
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