US5843810A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Film circuit and method of manufacturing the same
Assignee: Sony Corp
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Filing: 1997-01-31
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Granted: 1998-12-01
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Expires: 2017-01-31
Abstract
Abstract A reinforcing ring surrounding a semiconductor element connected electrically to respective interconnecting portions through electrodes is provided as one body through suspending portions. A film circuit is produced by forming a ring in place of an outer lead for instance by applying a lead frame forming technique in which a laminate of three layers or more is used as a base, an inner lead is formed on one side and an outer lead is formed by a surface layer on another side. In this manner, in a film circuit composed of an insulating film and a plurality of interconnecting portions (leads) electrically connecting between electrodes and other electronic components of a semiconductor element on at least one principal plane of the insulating film, it is made possible to align a ring surrounding a semiconductor element with respect to the semiconductor element only by placing the film circuit on the semiconductor element, and in its turn to reduce assembly mandays of a semiconductor device.
Inventors
- 👤 Kazuhiro Sato
- 👤 Kenji Osawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 17:00
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/111; H10W70/00; H10W70/40; H10W70/60; H10W70/67; H10W70/688; H10W72/00; H10W72/071; H10W72/077; H10W72/701; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
127 words
A method of manufacturing a semiconductor device composed of an insulating film and interconnecting portions formed at least on one principal plane of said insulating film for connecting between electrodes of a semiconductor element and other electronic components electrically, wherein said interconnecting portions and a ring surrounding said semiconductor element connected electrically to said interconnecting portions through electrodes are provided as one body through suspending portions, comprising the steps of: forming said interconnecting portions and said suspending portions on one surface side of a laminate of three layers or more by a surface layer itself or another metal layer formed on said surface layer and also forming said insulating film; and removing said laminate by selective etching leaving at least the circumference thereof, thereby forming said ring.
Claim 2
Independent Claim
127 words
A method of manufacturing a semiconductor device composed of an insulating film and interconnecting portions formed at least on one principal plane of said insulating film for connecting between electrodes of a semiconductor element and other electronic components electrically, wherein said interconnecting portions and a ring surrounding said semiconductor element connected electrically to said interconnecting portions through electrodes are provided as one body through suspending portions, comprising the steps of: forming said interconnecting portions and said suspending portions on one surface side of a laminate of three layers or more by a surface layer itself or another metal layer formed on said surface layer and also forming said insulating film; and removing said laminate by selective etching leaving at least the circumference thereof, thereby forming said ring.
Claim 3
Independent Claim
134 words
A method of manufacturing a semiconductor device composed of an insulating film and interconnecting portions formed at least on one principal plane of said insulating film for connecting between electrodes of a semiconductor element and other electronic components electrically, wherein said interconnecting portions and a ring surrounding said semiconductor element connected electrically to said interconnecting portions through electrodes are provided as one body through suspending portions, comprising the steps of: forming said interconnecting portions, said suspending portions and said ring portion on one surface side of a laminate of three layers or more by the surface layer itself or another metal layer formed on said surface layer; forming an insulating film; and removing portions in said laminate other than said interconnecting portions, said suspending portions, and said ring portion by means of selective etching.
Claim 4
Independent Claim
134 words
A method of manufacturing a semiconductor device composed of an insulating film and interconnecting portions formed at least on one principal plane of said insulating film for connecting between electrodes of a semiconductor element and other electronic components electrically, wherein said interconnecting portions and a ring surrounding said semiconductor element connected electrically to said interconnecting portions through electrodes are provided as one body through suspending portions, comprising the steps of: forming said interconnecting portions, said suspending portions and said ring portion on one surface side of a laminate of three layers or more by the surface layer itself or another metal layer formed on said surface layer; forming an insulating film; and removing portions in said laminate other than said interconnecting portions, said suspending portions, and said ring portion by means of selective etching.
References Cited (Backward Citations)
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