US5841692A
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Magnetic tunnel junction device with antiferromagnetically coupled pinned layer
Assignee: GlobalFoundries Inc
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Filing: 1997-07-16
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Granted: 1998-11-24
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Expires: 2017-07-16
Abstract
Abstract A magnetic tunnel junction (MTJ) device is usable as a magnetic field sensor or as a memory cell in a magnetic random access (MRAM) array. The MTJ device has a "pinned" ferromagnetic layer whose magnetization is oriented in the plane of the layer but is fixed so as to not be able to rotate in the presence of an applied magnetic field in the range of interest, a "free" ferromagnetic layer whose magnetization is able to be rotated in the plane of the layer relative to the fixed magnetization of the pinned ferromagnetic layer, and an insulating tunnel barrier layer located between and in contact with both ferromagnetic layers. The pinned ferromagnetic layer is formed as a sandwich of two antiferromagnetically coupled ferromagnetic layers separated by a metallic layer. The free and pinned ferromagnetic layers are located in separate spaced-apart planes so as to not overlap the tunnel barrier layer. An insulating layer surrounds the lateral perimeter of at least the free ferromagnetic layer and supports an electrical lead that makes contact with the free ferromagnetic layer.
Inventors
- 👤 William Joseph Gallagher
- 👤 Stuart Stephen Papworth Parkin
- 👤 John Casimir Slonczewski
- 👤 Jonathan Zanhong Sun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 06:34
CPC Classifications
H; H10; H10N; H10N50/00; H10N50/10; B; B82; B82Y; B82Y10/00; B82Y25/00; G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/09; G01R33/093; G01R33/098; G11; G11C; G11C11/00; G11C11/02; G11C11/16; G11C11/161; G11C11/165; G11C11/1675; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B2005/3996
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
210 words
A magnetic tunnel junction device comprising: a planar pinned ferromagnetic layer having first and second generally parallel surfaces, the pinned layer comprising a sandwich of two antiferromagnetically coupled ferromagnetic layers separated by a metallic layer; an antiferromagnetic layer formed on and in contact with the first surface of the pinned ferromagnetic layer for pinning the magnetization of the pinned ferromagnetic layer in a preferred direction and substantially preventing its rotation in the presence of an applied magnetic field; an insulating tunnel barrier layer located on and in contact with the second surface of the pinned ferromagnetic layer; a planar free ferromagnetic layer located on and in contact with the insulating tunnel barrier layer, the free ferromagnetic layer having a magnetization free to rotate in the presence of an applied magnetic field; wherein the pinned and free ferromagnetic layers are in separate spaced-apart planes without overlap of the insulating tunnel barrier layer; and a substrate, the pinned ferromagnetic layer, the antiferromagnetic layer, the tunnel barrier layer and the free ferromagnetic layer being formed on the substrate, whereby tunneling current passes through the tunnel barrier layer in a direction generally perpendicular to the planar pinned and free ferromagnetic layers when the planar pinned and free ferromagnetic layers are connected to electrical circuitry.
Claim 2
Dependent Claim
210 words
A magnetic tunnel junction device comprising: a planar pinned ferromagnetic layer having first and second generally parallel surfaces, the pinned layer comprising a sandwich of two antiferromagnetically coupled ferromagnetic layers separated by a metallic layer; an antiferromagnetic layer formed on and in contact with the first surface of the pinned ferromagnetic layer for pinning the magnetization of the pinned ferromagnetic layer in a preferred direction and substantially preventing its rotation in the presence of an applied magnetic field; an insulating tunnel barrier layer located on and in contact with the second surface of the pinned ferromagnetic layer; a planar free ferromagnetic layer located on and in contact with the insulating tunnel barrier layer, the free ferromagnetic layer having a magnetization free to rotate in the presence of an applied magnetic field; wherein the pinned and free ferromagnetic layers are in separate spaced-apart planes without overlap of the insulating tunnel barrier layer; and a substrate, the pinned ferromagnetic layer, the antiferromagnetic layer, the tunnel barrier layer and the free ferromagnetic layer being formed on the substrate, whereby tunneling current passes through the tunnel barrier layer in a direction generally perpendicular to the planar pinned and free ferromagnetic layers when the planar pinned and free ferromagnetic layers are connected to electrical circuitry.
Claim 3
Dependent Claim
36 words
The magnetic tunnel junction device according to claim 1 wherein the magnetization directions of the pinned and free ferromagnetic layers are substantially parallel or antiparallel to one another in the absence of an applied magnetic field.
Claim 4
Dependent Claim
34 words
The magnetic tunnel junction device according to claim 1 wherein the free ferromagnetic layer's magnetization direction is substantially perpendicular to the pinned ferromagnetic layer's magnetization direction in the absence of an applied magnetic field.
Claim 5
Dependent Claim
45 words
The magnetic tunnel junction device according to claim 1 wherein the lateral perimeters of the pinned and free ferromagnetic layers are generally rectangularly shaped, and wherein the magnetization directions of the pinned and free ferromagnetic layers are aligned generally along the lengths of the rectangles.
Claim 6
Dependent Claim
56 words
The magnetic tunnel junction device according to claim 1 further comprising a nonmagnetic conductor layer electrically connected to the free ferromagnetic layer and an insulator layer surrounding the lateral perimeter of the free ferromagnetic layer and supporting the insulator layer on a plane substantially parallel to the first and second surfaces of the free ferromagnetic layer.
References Cited (Backward Citations)
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