US5834847A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Completely buried contact holes
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-07-30
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Granted: 1998-11-10
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Expires: 2016-07-30
Abstract
Abstract A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole. The method includes forming in an insulator adjacent a contact hole a region of material of a higher thermal conductivity than the insulating layer, depositing a metal in the contact hole and heating the metal, the insulating layer and the region of material of a higher thermal conductivity to flow the metal into the contact hole so as to completely bury the contact hole.
Inventors
- 👤 Woo-Sang Jung
- 👤 Gil-heyun Choi
- 👤 Ji-soon Park
- 👤 Byeong-Jun Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:19
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
123 words
A semiconductor device having a completely buried contact hole in an interconnection structure, comprising: a first insulating layer of a first thermal conductivity having a contact hole formed therein; a region of material of a second thermal conductivity formed in said first insulating layer adjacent the location of said contact hole and spaced apart from said contact hole, wherein said second thermal conductivity is greater than said first thermal conductivity and wherein said region of material is selected from the group consisting of heat conductive refractory metals and heat conductive refractory metal silicides; metal formed in said hole; and wherein said region of material of a second thermal conductivity is positioned so as to allow said metal to completely fill said contact hole.
Claim 2
Dependent Claim
123 words
A semiconductor device having a completely buried contact hole in an interconnection structure, comprising: a first insulating layer of a first thermal conductivity having a contact hole formed therein; a region of material of a second thermal conductivity formed in said first insulating layer adjacent the location of said contact hole and spaced apart from said contact hole, wherein said second thermal conductivity is greater than said first thermal conductivity and wherein said region of material is selected from the group consisting of heat conductive refractory metals and heat conductive refractory metal silicides; metal formed in said hole; and wherein said region of material of a second thermal conductivity is positioned so as to allow said metal to completely fill said contact hole.
Claim 3
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said region of material comprises an auxiliary conductive layer pattern.
Claim 4
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein said region of material is in the shape of a line adjacent said contact hole.
Claim 5
Dependent Claim
17 words
A semiconductor device according to claim 1, wherein said region of material substantially surrounds said contact hole.
Claim 6
Dependent Claim
25 words
A semiconductor device according to claim 1, wherein said region of material is selected from the group consisting of tungsten, titanium, titanium nitride and tantalum.
Claim 7
Dependent Claim
28 words
A semiconductor device according to claim 1, wherein said region of material is patterned in a shape which allows direct application of heat to said region of material.
Claim 8
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein said region of material is electrically isolated from active semiconductor devices in said semiconductor device.
Claim 9
Dependent Claim
27 words
A semiconductor device according to claim 1, further comprising a conductive path formed in said first insulating layer for interconnecting active semiconductor devices in said semiconductor device.
Claim 10
Dependent Claim
28 words
A semiconductor device according to claim 1, wherein the distance from said contact hole to said region of material is less than the depth of said contact hole.
Claim 11
Dependent Claim
105 words
A semiconductor device having a completely buried contact hole in an interconnection structure, comprising: a first insulating layer of a first thermal conductivity having a contact hole formed therein; a region of material of a second thermal conductivity formed in said first insulating layer adjacent the location of said contact hole and having a thickness of from about 100 to about 3000 angstroms, wherein said second thermal conductivity is greater than said first thermal conductivity; metal formed in said hole; and wherein said region of material of a second thermal conductivity is positioned so as to allow said metal to completely fill said contact hole.
Claim 12
Dependent Claim
105 words
A semiconductor device having a completely buried contact hole in an interconnection structure, comprising: a first insulating layer of a first thermal conductivity having a contact hole formed therein; a region of material of a second thermal conductivity formed in said first insulating layer adjacent the location of said contact hole and having a thickness of from about 100 to about 3000 angstroms, wherein said second thermal conductivity is greater than said first thermal conductivity; metal formed in said hole; and wherein said region of material of a second thermal conductivity is positioned so as to allow said metal to completely fill said contact hole.
Claim 13
Dependent Claim
18 words
A semiconductor device according to claim 10, wherein said region of material comprises an auxiliary conductive layer pattern.
Claim 14
Dependent Claim
23 words
A semiconductor device according to claim 10, wherein said region of material is in the shape of a line adjacent said contact hole.
Claim 15
Dependent Claim
17 words
A semiconductor device according to claim 10, wherein said region of material substantially surrounds said contact hole.
Claim 16
Dependent Claim
33 words
A semiconductor device according to claim 10, wherein said region of material is comprised of a material selected from the group consisting of heat conductive refractory metals and heat conductive refractory metal silicides.
Claim 17
Dependent Claim
25 words
A semiconductor device according to claim 10 wherein said region of material is selected from the group consisting of tungsten, titanium, titanium nitride and tantalum.
Claim 18
Dependent Claim
28 words
A semiconductor device according to claim 10, wherein said region of material is patterned in a shape which allows direct application of heat to said region of material.
Claim 19
Dependent Claim
23 words
A semiconductor device according to claim 10, wherein said region of material is electrically isolated from active semiconductor devices in said semiconductor device.
Claim 20
Dependent Claim
27 words
A semiconductor device according to claim 10, further comprising a conductive path formed in said first insulating layer for interconnecting active semiconductor devices in said semiconductor device.
Claim 21
Dependent Claim
28 words
A semiconductor device according to claim 10, wherein the distance from said contact hole to said region of material is less than the depth of said contact hole.
Claim 22
Dependent Claim
154 words
A contact hole for a semiconductor device, the contact hole comprising: a first interlayer insulating layer formed on a semiconductor material; a first region of material of a first thermal conductivity formed on said first interlayer; a second interlayer insulating layer of a second thermal conductivity lower than said first thermal conductivity formed on said first interlayer insulating layer and covering said first region of material; a second region of material of said first thermal conductivity formed on said second interlayer insulating layer; a third interlayer insulating layer having a thermal conductivity less than said first thermal conductivity and formed on said second interlayer insulating layer covering said second region of material; an opening formed in said third interlayer insulating layer and extending downward through said second and said first interlayer insulating layers to said semiconductor material; and metal formed in said opening and substantially filling said opening to create completely buried contact hole.
Claim 23
Dependent Claim
154 words
A contact hole for a semiconductor device, the contact hole comprising: a first interlayer insulating layer formed on a semiconductor material; a first region of material of a first thermal conductivity formed on said first interlayer; a second interlayer insulating layer of a second thermal conductivity lower than said first thermal conductivity formed on said first interlayer insulating layer and covering said first region of material; a second region of material of said first thermal conductivity formed on said second interlayer insulating layer; a third interlayer insulating layer having a thermal conductivity less than said first thermal conductivity and formed on said second interlayer insulating layer covering said second region of material; an opening formed in said third interlayer insulating layer and extending downward through said second and said first interlayer insulating layers to said semiconductor material; and metal formed in said opening and substantially filling said opening to create completely buried contact hole.
Claim 24
Dependent Claim
21 words
A contact hole for a semiconductor device according to claim 20, wherein said first region of material substantially surrounds said opening.
Claim 25
Dependent Claim
29 words
A contact hole for a semiconductor device according to claim 20, wherein said first region of material is shaped so as to allow direct contact by a heat source.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-09 | 2002-05-11 | 2002-11-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-09 | 2006-05-11 | 2006-11-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-09 | 2010-05-11 | 2010-11-10 | $7700.00 | Window Closed / Lapsed |