Phase shifiting mask and method of manufacturing the same

Claim 2

A phase shifting mask comprising: a transparent substrate having a groove; a light-shading layer in the groove for shading an incident light; and a phase shifting layer on the light-shading layer and a portion of the transparent substrate for shifting a phase of the incident light, wherein a surface portion of the substrate includes an etch stop layer surrounding the light-shading layer.

Claim 3

The phase shifting mask as claimed in claim 1, wherein the groove has a depth of approximately 500˜4000 Å.

Claim 4

The phase shifting mask as claimed in claim 1, wherein the light-shading layer and the phase shifting layer are formed as one body, wherein the light-shading layer includes at least one of zinc or polycrystalline silicon, and wherein the phase shifting layer includes at least one of a zinc oxide or a silicon oxide.

Claim 5

The phase shifting mask as claimed in claim 3, wherein the light-shading layer comprises one of zinc (Zn) and polycrystalline silicon.

Claim 6

The phase shifting mask as claimed in claim 3, wherein the phase shifting layer comprise one of ZnO and SiO 2 .

Claim 7

The phase shifting mask as claimed in claim 1, wherein the light-shading layer and the phase shifting layer are formed as different bodies, wherein the light-shading layer includes an inorganic resist of a Ge--Se group, and wherein the phase shifting layer includes a silicon oxide.

Claim 8

The phase shifting mask as claimed in claim 6, wherein the light-shading layer comprises an inorganic resist of Ge--Se group.

Claim 9

The phase shifting mask as claimed in claim 6, wherein the phase shifting layer comprises SiO 2 .

Claim 10

The phase shifting mask as claimed in claim 1, wherein the light-shading layer is only within the groove.

Claim 11

The phase shifting mask as claimed in claim 1, wherein the phase shifting layer has a thickness of about 3500˜5000 Å.

Claim 12

The phase shifting mask as claimed in claim 1, wherein the etch stop layer comprises indium tin oxide.

Claim 13

The phase shifting mask as claimed in claim 11, wherein the etch stop layer has a thickness of about 500˜4000 Å.

Claim 16

The method of manufacturing a phase shifting mask as claimed in claim 13, wherein the sidewalls are formed of a polymer with a thickness of about 1000˜4000 Å.

Claim 17

The method of manufacturing a phase shifting mask as claimed in claim 13, wherein the groove is formed to a thickness of about 500˜4000 Å.

Claim 18

The method of manufacturing a phase shifting mask as claimed in claim 13, wherein the light-shading layer is formed with one of zinc and polycrystalline silicon.

Claim 19

The method of manufacturing a phase shifting mask as claimed in claim 16, wherein the step of forming the phase shifting layer and defining the light-shading layer comprises the steps of: depositing one of zinc and polycrystalline silicon material to fill the groove and on the sacrificial layer and the exposed region of the transparent substrate by a CVD method; polishing the material on the sacrificial layer and the transparent substrate by a chemical mechanical polishing method, to thereby planarize and expose the sacrificial layer; and oxidizing a portion of the material in contact with the transparent substrate and outside of the groove to form the phase shifting layer, thereby limiting the light-shading layer to within the groove.

Claim 20

The method of manufacturing a phase shifting mask as claimed in claim 17, wherein the phase shifting layer is formed by implanting oxygen ions into the portion of the material and performing a heat-treatment.

Claim 21

The method of manufacturing a phase shifting mask as claimed in claim 18, wherein the phase shifting layer is formed to a thickness of about 3500˜5000 Å.

Claim 22

The method of manufacturing a phase shifting mask as claimed in claim 13, further comprising the step of: forming an etch stop layer on the transparent substrate before the sacrificial layer is formed; and patterning the etch stop layer corresponding to the sacrificial layer and the sidewalls after the step of forming the sidewalls.

Claim 23

The method of manufacturing a phase shifting mask as claimed in claim 20, wherein the etch stop layer is formed of indium tin oxide.

Claim 24

The method of manufacturing a phase shifting mask as claimed in claim 21, wherein the etch stop layer is formed to a thickness of about 500˜4000 Å by a CVD method.

Claim 25

The method of manufacturing a phase shifting mask as claimed in claim 13, wherein the step of forming the groove uses anisotropic etching.

Claim 28

The method of manufacturing a phase shifting mask as claimed in claim 24, wherein the step of forming the sacrificial layer comprises the steps of: sequentially depositing a resist layer and a degeneration layer including silver on the transparent substrate; exposing a predetermined part of the degeneration layer to diffuse the silver into the resist layer, thereby forming the sacrificial layer having an etch-resistance; and removing the resist layer and the remaining degeneration layer.

Claim 29

The method of manufacturing a phase shifting mask as claimed in claim 25, wherein the resist layer is formed by spin-coating an inorganic resist including Ge--Se group.

Claim 30

The method of manufacturing a phase shifting mask as claimed in claim 25, wherein the resist layer is formed to a thickness of about 3500˜5000 Å.

Claim 31

The method of manufacturing a phase shifting mask as claimed in claim 25, wherein the degeneration layer is formed to a thickness of about 100˜200 Å.

Claim 32

The method of manufacturing a phase shifting mask as claimed in claim 24, wherein the light-shading layer is formed of an inorganic resist including Ge--Se group.

Claim 33

The method of manufacturing a phase shifting mask as claimed in claim 24, wherein the phase shifting layer is formed of SiO 2 .

Claim 34

The method of manufacturing a phase shifting mask as claimed in claim 24, wherein the step of forming the groove uses anisotropic etching.