US5822242A
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Asymmetric virtual ground p-channel flash cell with latid n-type pocket and method of fabrication therefor
Assignee: Macronix International Co Ltd
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Filing: 1997-03-05
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Granted: 1998-10-13
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Expires: 2017-03-05
Abstract
Abstract A memory cell having an asymmetric source and drain connection to virtual ground bit-lines providing an abrupt junction suitable for band-to-band hot electron generation and a gradual junction suitable for Fowler-Nordheim tunneling on each side of the cells. A nonvolatile semiconductor memory device comprising row and column arrangement of the cells in which adjacent columns of cells share a single virtual ground bit line. The method for manufacturing a memory cell having asymmetric source and drain regions and comprising the steps of: (1) forming a semiconductor substrate having a first conductivity type; (3) forming a dielectric covering a semiconductor substrate; (3) forming a first and second column of floating gate cores on the dielectric; (4) implanting a first dopant along a first dopant strip, the first dopant strip aligned between the first and second column and having a second conductivity type opposite the first conductivity type; (5) implanting a second dopant in a second dopant strip aligned with the first diffusion and extending below the second column, the second dopant having an enhancement of the first conductivity type; and (6) completing formation of control gate dielectric and control gates. The presence of asymmetric source and drain diffusions formed thereby improve the isolation between adjacent memory cells and minimizes the disturb problem.
Inventors
- 👤 Chia-Shing Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:03
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/30; G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/34; G11C16/3418; G11C16/3427; H10B69/00; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/685
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
123 words
A floating gate cell, comprising: a semiconductor substrate characterized by a first conductivity type; a dielectric provided on the semiconductor substrate; a floating gate core provided on the dielectric and comprising first and second opposing sides; a first diffusion region and a second diffusion region in the semiconductor substrate aligned with the first and the second opposing sides of the floating gate core, respectively, and the first and second diffusion regions characterized by a second conductivity type opposite the first conductivity type; a third diffusion region in the semiconductor substrate on the first side of the floating gate core and extending toward the second side of the floating gate core, the third diffusion region characterized by an enhancement of the first conductivity type.
Claim 2
Dependent Claim
123 words
A floating gate cell, comprising: a semiconductor substrate characterized by a first conductivity type; a dielectric provided on the semiconductor substrate; a floating gate core provided on the dielectric and comprising first and second opposing sides; a first diffusion region and a second diffusion region in the semiconductor substrate aligned with the first and the second opposing sides of the floating gate core, respectively, and the first and second diffusion regions characterized by a second conductivity type opposite the first conductivity type; a third diffusion region in the semiconductor substrate on the first side of the floating gate core and extending toward the second side of the floating gate core, the third diffusion region characterized by an enhancement of the first conductivity type.
Claim 3
Dependent Claim
47 words
The floating gate cell of claim 1, further comprising; a fourth diffusion region in the semiconductor substrate on the second side of the floating gate core and extending toward the first side of the floating gate core and characterized by a diminishment in the second conductivity type.
Claim 4
Dependent Claim
25 words
The floating gate cell of claim 2, further comprising; a control gate dielectric and control gates on the floating gate core to provide a transistor.
Claim 5
Dependent Claim
83 words
The floating gate cell of claim 3, wherein; said substrate is characterized by an n-type conductivity material; said dielectric comprises silicon oxide; said first diffusion region and said second diffusion region are characterized by a p-type conductivity material; said third diffusion region is characterized by an n-type conductivity material having a greater conductivity than the substrate; said fourth diffusion region is characterized by a p-type conductivity material having a conductivity less than the second diffusion region; and said floating gate core comprises polysilicon.
Claim 6
Dependent Claim
63 words
The floating gate cell of claim 1, wherein: said substrate is characterized by an n-type conductivity material; said dielectric comprises silicon oxide; said first diffusion region and said second diffusion region are characterized by a p-type conductivity material; said third diffusion region is characterized by an n-type conductivity material having a conductivity greater than the substrate; and said floating gate core comprises polysilicon.
Claim 7
Dependent Claim
216 words
A semiconductor memory array, comprising: a semiconductor substrate characterized by a first conductivity type; a dielectric on the semiconductor substrate; an array of floating gates arranged in columns and rows provided on the dielectric; a plurality of first diffusion regions in the semiconductor substrate between a first and a second column of the array of floating gate cores, and each of the plurality of first diffusion regions characterized by a second conductivity type; a plurality of second diffusion regions in the semiconductor substrate each adjacent a corresponding one of the plurality of first diffusion regions and extending below the second column and each of the plurality of second diffusion regions characterized by an enhancement of the first conductivity type; an isolation layer on the array of floating gate cores; a plurality of word-line conductors on each of the rows of the array of floating gate cores, separated therefrom by the isolation layer, and forming a plurality of rows of floating gate transistors; and a plurality of select circuits having contact with the plurality of word-line conductors and the plurality of diffusion regions, wherein the plurality of select circuits selectively switch current to a word-line conductor and a selected pair of the first and second diffusion regions to program, erase, and read a selected floating gate transistor.
Claim 8
Dependent Claim
216 words
A semiconductor memory array, comprising: a semiconductor substrate characterized by a first conductivity type; a dielectric on the semiconductor substrate; an array of floating gates arranged in columns and rows provided on the dielectric; a plurality of first diffusion regions in the semiconductor substrate between a first and a second column of the array of floating gate cores, and each of the plurality of first diffusion regions characterized by a second conductivity type; a plurality of second diffusion regions in the semiconductor substrate each adjacent a corresponding one of the plurality of first diffusion regions and extending below the second column and each of the plurality of second diffusion regions characterized by an enhancement of the first conductivity type; an isolation layer on the array of floating gate cores; a plurality of word-line conductors on each of the rows of the array of floating gate cores, separated therefrom by the isolation layer, and forming a plurality of rows of floating gate transistors; and a plurality of select circuits having contact with the plurality of word-line conductors and the plurality of diffusion regions, wherein the plurality of select circuits selectively switch current to a word-line conductor and a selected pair of the first and second diffusion regions to program, erase, and read a selected floating gate transistor.
Claim 9
Dependent Claim
55 words
The semiconductor memory array of claim 6, further comprising; a plurality of third diffusion regions in the semiconductor substrate each adjacent a corresponding one of the plurality of first diffusion regions and extending below the first column and each of the plurality of third diffusion regions characterized by a diminishment of the second conductivity type.
Claim 10
Dependent Claim
94 words
The semiconductor memory array of claim 7, wherein; said substrate is characterized by an n-type conductivity material; said dielectric comprises silicon oxide; said plurality of first diffusion regions are characterized by a p-type conductivity material; said plurality of second diffusion regions are characterized by an n-type conductivity material having a conductivity greater than the conductivity of the substrate; said plurality of third diffusion regions are characterized by a p-type conductivity material having a conductivity less than the conductivity of the plurality of first diffusion regions; and said array of floating gate cores comprise polysilicon.
Claim 11
Dependent Claim
67 words
The semiconductor memory array of claim 6, wherein: said substrate is characterized by an n-type conductivity material; said dielectric comprises silicon oxide; said plurality of first diffusion regions are characterized by a p-type conductivity material; said plurality of second diffusion regions are characterized by an n-type conductivity material having a conductivity greater than the conductivity of the substrate; and said array of floating gate cores comprise polysilicon.
References Cited (Backward Citations)
US5452250A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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