US5821627A
Expired / Lapsed
US
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Electronic circuit device
Assignee: Toshiba Corp
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Filing: 1997-11-05
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Granted: 1998-10-13
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Expires: 2017-11-05
Abstract
Abstract An electronic circuit device includes a substrate, a wiring layer formed on the surface of the substrate and essentially consisting of at least one metal selected from the group consisting of gold, copper, tin, and aluminum, a bump formed on the wiring layer and essentially consisting of at least one metal selected from the group consisting of gold, copper, and aluminum, and a micro electronic element formed on the bump, wherein solid-phase diffusion bonding is performed at least either between the wiring layer and the bump or between the bump and an electrode of the micro electronic element.
Inventors
- 👤 Miki Mori
- 👤 Yukio Kizaki
- 👤 Takaaki Yasumoto
- 👤 Koji Yamakawa
- 👤 Masayuki Saito
- 👤 Tatsuro Uchida
- 👤 Takasi Togasaki
- 👤 Takashi Yebisuya
- 👤 Taijun Murakami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 16:53
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/328; H05K2201/00; H05K2201/10; H05K2201/10613; H05K2201/10621; H05K2201/10636; H05K2201/10734; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H10W72/01221; H10W72/01225; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W72/251; H10W72/252; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W90/00; H10W90/701; H10W90/721; H10W90/724; H10W90/751; H10W90/754; Y; Y02; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
106 words
An electronic circuit device comprising: a substrate; a wiring layer formed on a surface of said substrate; bump-like bonding means formed on said wiring layer; a barrier metal layer formed on said bonding means; and a micro electronic element formed on said barrier metal layer, wherein one of said wiring layer and said bump-like bonding means is formed of gold with the other being formed of aluminum, and solid-phase diffsion is performed at least either between said wiring layer and said bonding means or between said bonding means and an electrode of said micro electronic element at temperatures below a eutectic temperature of gold and aluminum.
Claim 2
Dependent Claim
106 words
An electronic circuit device comprising: a substrate; a wiring layer formed on a surface of said substrate; bump-like bonding means formed on said wiring layer; a barrier metal layer formed on said bonding means; and a micro electronic element formed on said barrier metal layer, wherein one of said wiring layer and said bump-like bonding means is formed of gold with the other being formed of aluminum, and solid-phase diffsion is performed at least either between said wiring layer and said bonding means or between said bonding means and an electrode of said micro electronic element at temperatures below a eutectic temperature of gold and aluminum.
Claim 3
Dependent Claim
118 words
An electronic circuit device comprising: a substrate; a wiring layer formed on a surface of said substrate; bump-like bonding means formed on said wiring layer; a barrier metal layer formed on said bonding means; and a micro electronic element formed on said barrier metal layer, wherein the wiring layer and the bump-like bonding means are formed of the same metal selected from the group consisting of gold and aluminum, and solid-phase diffusion is performed at least either between said wiring layer and said bonding means or between said bonding means and an electrode of said micro electronic element at temperatures below the melting point of the metal forming each of the wiring layer and the bump-like bonding means.
Claim 4
Dependent Claim
118 words
An electronic circuit device comprising: a substrate; a wiring layer formed on a surface of said substrate; bump-like bonding means formed on said wiring layer; a barrier metal layer formed on said bonding means; and a micro electronic element formed on said barrier metal layer, wherein the wiring layer and the bump-like bonding means are formed of the same metal selected from the group consisting of gold and aluminum, and solid-phase diffusion is performed at least either between said wiring layer and said bonding means or between said bonding means and an electrode of said micro electronic element at temperatures below the melting point of the metal forming each of the wiring layer and the bump-like bonding means.
Claim 5
Dependent Claim
86 words
A semiconductor device comprising: an insulating substrate; a wiring layer formed on said insulating substrate; bump-like bonding means bonded to a surface of said wiring layer by solid-phase diffusion; a barrier metal layer formed on said bonding means; and a semiconductor element formed on said barrier metal layer, wherein one of said wiring layer and said bump-like bonding means is formed of gold with the other being formed of aluminum, and said solid-phase diffusion is performed at temperatures below a eutectic temperature of gold and aluminum.
Claim 6
Dependent Claim
86 words
A semiconductor device comprising: an insulating substrate; a wiring layer formed on said insulating substrate; bump-like bonding means bonded to a surface of said wiring layer by solid-phase diffusion; a barrier metal layer formed on said bonding means; and a semiconductor element formed on said barrier metal layer, wherein one of said wiring layer and said bump-like bonding means is formed of gold with the other being formed of aluminum, and said solid-phase diffusion is performed at temperatures below a eutectic temperature of gold and aluminum.
Claim 7
Dependent Claim
120 words
A semiconductor device comprising: an insulating substrate; a wiring layer formed on said insulating substrate and essentially consisting of at least one metal selected from the group consisting of gold and aluminum; bump-like bonding means bonded to a surface of said wiring layer by solid-phase diffusion and essentially consisting of at least one metal selected from the group consisting of gold and aluminum; a barrier metal formed on said bonding means; and a microelectronic element formed on said barrier metal layer, wherein said wiring layer and said bump-like bonding means are formed of the same metal selected from the group consisting of gold and aluminum, and said solid-phase diffusion is performed at temperatures below the melting point of the metal.
Claim 8
Dependent Claim
120 words
A semiconductor device comprising: an insulating substrate; a wiring layer formed on said insulating substrate and essentially consisting of at least one metal selected from the group consisting of gold and aluminum; bump-like bonding means bonded to a surface of said wiring layer by solid-phase diffusion and essentially consisting of at least one metal selected from the group consisting of gold and aluminum; a barrier metal formed on said bonding means; and a microelectronic element formed on said barrier metal layer, wherein said wiring layer and said bump-like bonding means are formed of the same metal selected from the group consisting of gold and aluminum, and said solid-phase diffusion is performed at temperatures below the melting point of the metal.
Claim 9
Dependent Claim
101 words
A micro electronic circuit device comprising: an insulating substrate, a wiring layer formed on said insulating substrate and consisting essentially of aluminum; bump-like bonding means consisting essentially of gold and bonded to a surface of said wiring layer by solid-phase diffusion at temperatures below a eutectic temperature of gold and aluminum, a reaction layer having at least one material selected from the group consisting of an amorphous alloy and a solid solution being formed as a result of said solid-phase diffusion; a barrier metal layer formed on said bonding means and a micro electronic element formed on said barrier metal layer.
Claim 10
Dependent Claim
101 words
A micro electronic circuit device comprising: an insulating substrate, a wiring layer formed on said insulating substrate and consisting essentially of aluminum; bump-like bonding means consisting essentially of gold and bonded to a surface of said wiring layer by solid-phase diffusion at temperatures below a eutectic temperature of gold and aluminum, a reaction layer having at least one material selected from the group consisting of an amorphous alloy and a solid solution being formed as a result of said solid-phase diffusion; a barrier metal layer formed on said bonding means and a micro electronic element formed on said barrier metal layer.
Claim 11
Dependent Claim
68 words
A micro electronic circuit device comprising: an insulating substrate; a wiring layer formed on said insulating substrate and consisting essentially of aluminum; bump-like bonding means consisting essentially of aluminum and bonded to a surface of said wiring layer by solid-phase diffusion at temperatures below the melting point of aluminum; a barrier metal layer formed on said bonding means; and a semiconductor element formed on said barrier metal layer.
Claim 12
Dependent Claim
68 words
A micro electronic circuit device comprising: an insulating substrate; a wiring layer formed on said insulating substrate and consisting essentially of aluminum; bump-like bonding means consisting essentially of aluminum and bonded to a surface of said wiring layer by solid-phase diffusion at temperatures below the melting point of aluminum; a barrier metal layer formed on said bonding means; and a semiconductor element formed on said barrier metal layer.
Claim 13
Dependent Claim
18 words
A device according to claim 1, wherein said micro electronic element is a package incorporating a semiconductor element.
Claim 14
Dependent Claim
16 words
A device according to claim 1, wherein said micro electronic element is a passive chip element.
Claim 15
Dependent Claim
24 words
A device according to claim 1, wherein said substrate is a printing head having a ceramic substrate on which a wiring layer is formed.
Claim 16
Dependent Claim
13 words
A device according to claim 1, wherein said substrate is a display element.
Claim 17
Dependent Claim
29 words
A device according to claim 1, wherein said wiring layer has a multilayered structure in which a metal layer and an oxide layer of said metal are alternately stacked.
Claim 18
Dependent Claim
29 words
A device according to claim 8, wherein said wiring layer has a multilayered structure in which a metal layer and an oxide layer of said metal are alternately stacked.
Claim 19
Dependent Claim
47 words
A device according to claim 8, wherein said wiring layer contains aluminum, said bonding means contains gold, a reaction layer is formed between said wiring layer and said bonding means by solid-phase diffusion, said a reaction layer comprising intermetallic compound having a highest Au 4 Al content.
Claim 20
Dependent Claim
114 words
A semiconductor device comprising: an insulating substrate; a wiring layer formed on said insulating substrate and essentially consisting of a metal alloy of the first metal of at least one material selected from the group consisting of gold, copper, tin, and aluminum, and the second metal of at least one material selected from the group consisting of molybdenum, tungsten, and tantalum; bump-like bonding means which is bonded to a surface of said wiring layer by forming a reaction layer by a solid-phase diffusion reaction and essentially consists of at least one metal selected from the group consisting of gold, silver, copper, nickel, palladium, and platinum; and a semiconductor element formed on said bonding means.
Claim 21
Dependent Claim
114 words
A semiconductor device comprising: an insulating substrate; a wiring layer formed on said insulating substrate and essentially consisting of a metal alloy of the first metal of at least one material selected from the group consisting of gold, copper, tin, and aluminum, and the second metal of at least one material selected from the group consisting of molybdenum, tungsten, and tantalum; bump-like bonding means which is bonded to a surface of said wiring layer by forming a reaction layer by a solid-phase diffusion reaction and essentially consists of at least one metal selected from the group consisting of gold, silver, copper, nickel, palladium, and platinum; and a semiconductor element formed on said bonding means.
Claim 22
Dependent Claim
102 words
A liquid crystal display device comprising: first and second substrates opposing each other; a liquid crystal sandwiched between said first and second substrates; a wiring layer formed on said first substrate, having a thickness of 3,000 Å to 8,500 Å, and said wiring layer including a top layer having a thickness of 2,500 Å to 8,000 Å and containing aluminum as a main component; bump-like bonding means bonded on said top layer by solid-phase diffusion and essentially consisting of at least one metal selected from the group consisting of gold, copper, and aluminum; and a semiconductor element formed on said bonding means.
Claim 23
Dependent Claim
102 words
A liquid crystal display device comprising: first and second substrates opposing each other; a liquid crystal sandwiched between said first and second substrates; a wiring layer formed on said first substrate, having a thickness of 3,000 Å to 8,500 Å, and said wiring layer including a top layer having a thickness of 2,500 Å to 8,000 Å and containing aluminum as a main component; bump-like bonding means bonded on said top layer by solid-phase diffusion and essentially consisting of at least one metal selected from the group consisting of gold, copper, and aluminum; and a semiconductor element formed on said bonding means.
Claim 24
Dependent Claim
29 words
A device according to claim 15, wherein said wiring layer has a multilayered structure in which a metal layer and an oxide layer of said metal are alternately stacked.
Claim 25
Dependent Claim
85 words
A device according to claim 15, wherein said wiring layer further comprises a first pad array and a second pad array, said first and second pad arrays being arranged such that a central coordinate position of said second pad array is defined as (xi+j,yi+k) (i=1 to n; j and k are moving distances) when a central coordinate position of said first pad array is defined as (xi,yi) (i=1 to n), and said bonding means is formed on one of said first and second pad arrays.
Claim 26
Dependent Claim
57 words
An electrical circuit device comprising: a substrate; an aluminum-containing wiring layer formed on said substrate; bump-like gold-containing bonding means bonded on said wiring layer by forming a reaction layer by solid-phase diffusion; and a micro electrical element formed on said bonding means, wherein said reaction layer comprises a intermetallic compound having a highest Au 4 Al content.
Claim 27
Dependent Claim
57 words
An electrical circuit device comprising: a substrate; an aluminum-containing wiring layer formed on said substrate; bump-like gold-containing bonding means bonded on said wiring layer by forming a reaction layer by solid-phase diffusion; and a micro electrical element formed on said bonding means, wherein said reaction layer comprises a intermetallic compound having a highest Au 4 Al content.
Claim 28
Dependent Claim
13 words
A device according to claim 18, wherein said substrate is a display element.
Claim 29
Dependent Claim
86 words
A circuit substrate comprising: a substrate; and a multilayered wiring layer constituted by a first metal layer formed on said substrate and essentially consisting of at least one metal selected from the group consisting of gold, copper, tin, and aluminum, an oxide film formed on said first metal layer and essentially consisting of oxygen the same metal as that of said first metal layer, and a second metal layer formed on said metal oxide film and consisting of a metal as in said first metal layer.
Claim 30
Dependent Claim
86 words
A circuit substrate comprising: a substrate; and a multilayered wiring layer constituted by a first metal layer formed on said substrate and essentially consisting of at least one metal selected from the group consisting of gold, copper, tin, and aluminum, an oxide film formed on said first metal layer and essentially consisting of oxygen the same metal as that of said first metal layer, and a second metal layer formed on said metal oxide film and consisting of a metal as in said first metal layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-10-12 | 2002-04-13 | 2002-10-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-10-12 | 2006-04-13 | 2006-10-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-10-12 | 2010-04-13 | 2010-10-13 | $7700.00 | Window Closed / Lapsed |