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US5804834A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor device having contact resistance reducing layer

Assignee: Mitsubishi Chemical Corp
•
Filing: 1997-07-07
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Granted: 1998-09-08
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Expires: 2017-07-07
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Abstract

Abstract In a wide band cap semiconductor, a GaP x N 1-x (0.1≦x≦0.9) layer is inserted between a layer comprising AlGaInN and an electrode, The potential barrier between the electrode and the surface layer can be reduced. Contact resistance can be decreased, and ohmic contact can be easily taken up.

Inventors

  • 👤 Kenji Shimoyama
  • 👤 Hideki Gotoh

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 10:27
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/852; H10D64/00; H10D64/60; H10D64/62; H10H20/01; H10H20/011; H10H20/013; H10H20/0137; H10H20/822; H10H20/824; H10H20/825; H10H20/814; H10H20/83; H10H20/832

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 21 words
A semiconductor device, comprising a thin film GaP x N 1-x (0.1≦x≦0.9) layer between a layer of AlGaInN and an electrode.
Claim 2
Dependent Claim 21 words
A semiconductor device, comprising a thin film GaP x N 1-x (0.1≦x≦0.9) layer between a layer of AlGaInN and an electrode.
Claim 3
Dependent Claim 15 words
A semiconductor device according to claim 1, wherein said layer of AlGaInN is of p-type.
Claim 4
Dependent Claim 37 words
A semiconductor device according to claim 1 or 2, wherein said GaP x N 1-x (0.1≦x≦0.9) layer is formed by alternately laminating a GaP y N 1-y (y≧0.9) layer and a GaP z N 1-z (z≦0.1) layer.
Claim 5
Dependent Claim 30 words
A semiconductor device according to claim 3, wherein said GaP y N 1-y (y≧0.9) layer and said GaP z N 1-z (Z≦0.1) layer are not thicker than 10 molecular layers.
Claim 6
Dependent Claim 59 words
A semiconductor device, comprising a distributed Bragg reflector comprising an Al x Ga 1-x P (0 ≦x<1) layer and an Al y Ga 1-y P (0<y≦1, x<y) layer alternately grown and an AlGaInN light emitting layer, said distributed Bragg reflector being provided at least one of (1) above said light emitting layer and (2) under said light emitting layer.
Claim 7
Dependent Claim 59 words
A semiconductor device, comprising a distributed Bragg reflector comprising an Al x Ga 1-x P (0 ≦x<1) layer and an Al y Ga 1-y P (0<y≦1, x<y) layer alternately grown and an AlGaInN light emitting layer, said distributed Bragg reflector being provided at least one of (1) above said light emitting layer and (2) under said light emitting layer.
Claim 8
Dependent Claim 26 words
A semiconductor device according to claim 5, further comprising a substrate having a band gap not greater than a band gap of the light emitting layer.
Claim 9
Dependent Claim 22 words
A semiconductor device according to claim 6, wherein said distributed Bragg reflector is provided between the substrate and the light emitting layer.
Claim 10
Dependent Claim 12 words
A semiconductor device according to claim 6, which has a GaP substrate.
Claim 11
Dependent Claim 19 words
A semiconductor device according to claim 8, wherein a surface of the GaP substrate is a {111} B face.
Claim 12
Dependent Claim 22 words
A semiconductor device according to claim 5, wherein said distributed Bragg reflector is provided between the light emitting layer and an electrode.
Claim 13
Dependent Claim 31 words
A semiconductor device according to claim 5, wherein said distributed Bragg reflector is provided as one of either (1) above said light emitting layer or (2) under said light emitting layer.
Claim 14
Dependent Claim 16 words
A semiconductor device according to claim 11, wherein said semiconductor device is a light emitting diode.

References Cited (Backward Citations)

US5005057A Cited
US5173751A Cited
US5258990A Cited
JPH0621511A Cited
US5434426A Cited
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US5523589A Cited

USPTO Annuity & Maintenance Windows

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3.5 Years (Year 4) 2001-09-07 2002-03-09 2002-09-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-09-07 2006-03-09 2006-09-08 $3760.00 Window Closed / Lapsed
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