US5796448A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Structure for a parasitic capacitor and a storage capacitor in a thin film transistor-liquid crystal display and a method for making the same
Assignee: Samsung Display Co Ltd
•
Filing: 1996-01-29
•
Granted: 1998-08-18
•
Expires: 2016-01-29
Abstract
Abstract The present invention includes a drain of the TFT which operates as a first upper electrode of the parasitic capacitor. A second upper electrode of the storage capacitor overlaps with the pixel electrode. An insulating layer is disposed between the second upper electrode and the pixel electrode. An insulating layer is also disposed between a first lower electrode of the parasitic capacitor at its associated upper electrode, as well as a second lower electrode of the storage capacitor and its associated upper electrode. Further, the overlapping direction of the two upper electrodes is identical with that of the two lower electrodes so that an undesired dc-offset voltage is made proportional between each of the pixels in the TFT-LCD array.
Inventors
- 👤 Dong-Gyu Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:01
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136213; G02F1/1368
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
165 words
A structure of a parasitic capacitor and a storage capacitor in a thin film transistor-liquid crystal display, comprising: a first lower electrode forming a portion of said parasitic capacitor; a second lower electrode forming a portion of said storage capacitor; a first insulating layer disposed over said first and second lower electrodes; a first upper electrode forming an additional portion of said parasitic capacitor and being disposed on said first insulating layer so as to overlap an edge of said first lower electrode; a second upper electrode forming an additional portion of said storage capacitor and being disposed on said first insulating layer so as to overlap an edge of said second lower electrode in a direction corresponding to that in which said first upper electrode overlaps the edge of said first lower electrode; and a second insulating layer disposed over said first and second upper electrodes; and a pixel electrode disposed on said second insulating layer and electrically connected to said first upper electrode.
Claim 2
Dependent Claim
165 words
A structure of a parasitic capacitor and a storage capacitor in a thin film transistor-liquid crystal display, comprising: a first lower electrode forming a portion of said parasitic capacitor; a second lower electrode forming a portion of said storage capacitor; a first insulating layer disposed over said first and second lower electrodes; a first upper electrode forming an additional portion of said parasitic capacitor and being disposed on said first insulating layer so as to overlap an edge of said first lower electrode; a second upper electrode forming an additional portion of said storage capacitor and being disposed on said first insulating layer so as to overlap an edge of said second lower electrode in a direction corresponding to that in which said first upper electrode overlaps the edge of said first lower electrode; and a second insulating layer disposed over said first and second upper electrodes; and a pixel electrode disposed on said second insulating layer and electrically connected to said first upper electrode.
Claim 3
Dependent Claim
39 words
The structure according to claim 1 wherein said pixel electrode partially overlaps said first upper electrode so that said pixel electrode can be electrically connected to said first upper electrode through a contact hole in said second insulating layer.
Claim 4
Dependent Claim
18 words
The structure according to claim 1, wherein said second lower electrode is connected with an adjacent gate line.
Claim 5
Dependent Claim
17 words
The structure according to claim 1, wherein said second lower electrode is separated from a gate line.
Claim 6
Dependent Claim
196 words
A portion of a liquid crystal device structure comprising: a substrate; a gate electrode disposed on said substrate, said gate electrode also being a lower parasitic capacitor electrode; a lower storage electrode of a storage capacitor; a first insulating layer which covers said gate electrode and said lower electrode; a source and drain spaced from each other and formed on said first insulating layer so that said gate electrode is disposed below and between said source and drain so that said source and drain overlap edges of said gate electrode in a direction, said drain also being an upper parasitic capacitor electrode; an amorphous silicon layer disposed above said first insulating layer and below said source and drain, said amorphous silicon layer used to establish a current path between said source and drain; an upper storage electrode formed on said first insulating layer and disposed over said lower storage electrode, said upper storage electrode overlapping an edge of said lower storage electrode in said direction; a second insulating layer disposed over said drain and said upper storage electrode; and a pixel electrode disposed on said second insulating layer and electrically connected to said upper parasitic electrode.
Claim 7
Dependent Claim
196 words
A portion of a liquid crystal device structure comprising: a substrate; a gate electrode disposed on said substrate, said gate electrode also being a lower parasitic capacitor electrode; a lower storage electrode of a storage capacitor; a first insulating layer which covers said gate electrode and said lower electrode; a source and drain spaced from each other and formed on said first insulating layer so that said gate electrode is disposed below and between said source and drain so that said source and drain overlap edges of said gate electrode in a direction, said drain also being an upper parasitic capacitor electrode; an amorphous silicon layer disposed above said first insulating layer and below said source and drain, said amorphous silicon layer used to establish a current path between said source and drain; an upper storage electrode formed on said first insulating layer and disposed over said lower storage electrode, said upper storage electrode overlapping an edge of said lower storage electrode in said direction; a second insulating layer disposed over said drain and said upper storage electrode; and a pixel electrode disposed on said second insulating layer and electrically connected to said upper parasitic electrode.
Claim 8
Dependent Claim
35 words
The structure according to claim 5 wherein said pixel electrode partially overlaps said drain so that said pixel electrode can be electrically connected to said drain through a contact hole in said second insulating layer.
Claim 9
Dependent Claim
18 words
The structure according to claim 5, wherein said lower storage electrode is connected with an adjacent gate line.
Claim 10
Dependent Claim
17 words
The structure according to claim 5, wherein said lower storage electrode is separated from a gate line.
Claim 11
Dependent Claim
46 words
The structure according to claim 5 further including first and second N + amorphous silicon layers disposed below said source and drain, respectively, so that said first and second N + amorphous silicon layers electrically connect said source and drain, respectively, to said amorphous silicon layer.
Claim 12
Dependent Claim
16 words
The structure according to claim 5, wherein said upper storage electrode is separated from said drain.
Claim 13
Independent Claim
128 words
A method for making a portion of a thin film transistor-liquid crystal display, comprising the steps of: forming a gate electrode and a lower storage electrode of a storage capacitor on a substrate; forming a gate insulating layer over said gate electrode and said lower storage electrode; forming a semiconductor layer over a portion of said gate insulating layer; forming simultaneously a source electrode, a drain electrode which overlaps an edge of said gate electrode in a direction, and an upper storage electrode which overlaps an edge of said lower storage electrode in said same direction; forming a second insulating layer disposed over said drain and said upper storage electrode; and forming a pixel electrode on said second insulating layer that is electrically connected to said drain electrode.
Claim 14
Independent Claim
128 words
A method for making a portion of a thin film transistor-liquid crystal display, comprising the steps of: forming a gate electrode and a lower storage electrode of a storage capacitor on a substrate; forming a gate insulating layer over said gate electrode and said lower storage electrode; forming a semiconductor layer over a portion of said gate insulating layer; forming simultaneously a source electrode, a drain electrode which overlaps an edge of said gate electrode in a direction, and an upper storage electrode which overlaps an edge of said lower storage electrode in said same direction; forming a second insulating layer disposed over said drain and said upper storage electrode; and forming a pixel electrode on said second insulating layer that is electrically connected to said drain electrode.
References Cited (Backward Citations)
US5182661A
Cited
US5276540A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-17 | 2002-02-16 | 2002-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-17 | 2006-02-16 | 2006-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-17 | 2010-02-16 | 2010-08-18 | $7700.00 | Window Closed / Lapsed |